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Beyond CMOS
Beyond CMOS refers to the possible future digital logic technologies beyond the scaling limits of CMOS technology. which limits device density and speeds due to heating effects. ''Beyond CMOS'' is the name of one of the 7 focus groups in ITRS 2.0 (2013) and in its successor, the International Roadmap for Devices and Systems. CPUs using CMOS were released from 1986 (e.g. 12 MHz Intel 80386). As CMOS transistor dimensions were shrunk the clock speeds also increased. Since about 2004 CMOS CPU clock speeds have leveled off at about 3.5 GHz. CMOS devices sizes continue to shrink – see Intel's process–architecture–optimization model (and older tick–tock model) and ITRS: * 22 nanometer Ivy Bridge in 2012 * first 14 nanometer processors shipped in Q4 2014. * In May 2015, Samsung Electronics showed a 300 mm wafer of 10 nanometer FinFET chips. It is not yet clear if CMOS transistors will still work below 3 nm. See 3 nanometer. Comparisons of techno ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Digital Logic
A logic gate is a device that performs a Boolean function, a logical operation performed on one or more binary inputs that produces a single binary output. Depending on the context, the term may refer to an ideal logic gate, one that has, for instance, zero rise time and unlimited fan-out, or it may refer to a non-ideal physical device (see ideal and real op-amps for comparison). The primary way of building logic gates uses diodes or transistors acting as electronic switches. Today, most logic gates are made from MOSFETs (metal–oxide–semiconductor field-effect transistors). ''From Integrated circuit'' They can also be constructed using vacuum tubes, electromagnetic relays with relay logic, fluidic logic, pneumatic logic, optics, molecules, acoustics, or even mechanical or thermal elements. Logic gates can be cascaded in the same way that Boolean functions can be composed, allowing the construction of a physical model of all of Boolean logic, and therefore, all of the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanoelectronic Research Initiative
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. carbon nanotube or silicon nanowires) or advanced molecular electronics. Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm. Recent silicon MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm, 10 nm and 7 nm FinFET (fin field-effect transistor) generations. Nanoelectronics is sometimes considered as disruptive technology because present candidates are significantly different ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
ARC Centre Of Excellence In Future Low-Energy Electronics Technologies
} The ARC Centre of Excellence in Future Low-Energy Electronics Technologies (or FLEET) was a collaboration of physicists, electrical engineers, chemists and material scientists from seven Australian universities developing ultra-low energy electronics aimed at reducing energy use in information technology (IT). The Centre was funded in the 2017 ARC funding round. Aims FLEET aimed to develop a new generation of ultra-low resistance electronic devices, capitalising on Australian research in atomically thin materials, topological materials, exciton superfluids and nanofabrication. Programmes FLEET's research pursued three broad research themes to develop devices in which electrical current can flow without resistance: * Topological insulators: a relatively new class of materials and recognised by the 2016 Nobel Prize in Physics, topological insulators conduct electricity only along their edges, and strictly in one direction. This one-way path conducts electricity without loss of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Spintronics
Spintronics (a portmanteau meaning spin transport electronics), also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics. Spintronics fundamentally differs from traditional electronics in that, in addition to charge state, electron spins are used as a further degree of freedom, with implications in the efficiency of data storage and transfer. Spintronic systems are most often realised in dilute magnetic semiconductors (DMS) and Heusler alloys and are of particular interest in the field of quantum computing and neuromorphic computing, upon which leads to integrated research requirements around Hyperdimensional Computation. History Spintronics emerged from discoveries in the 1980s concerning spi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Molecular Electronics
Molecular electronics is the study and application of molecular building blocks for the fabrication of electronic components. It is an interdisciplinary area that spans physics, chemistry, and materials science. It provides a potential means to extend Moore's Law beyond the foreseen limits of small-scale conventional silicon integrated circuits. Molecular scale electronics Molecular scale electronics, also called single-molecule electronics, is a branch of nanotechnology that uses single molecules, or nanoscale collections of single molecules, as electronic components. Because single molecules constitute the smallest stable structures possible, this miniaturization is the ultimate goal for shrinking electrical circuits. Conventional electronic devices are traditionally made from bulk materials. Bulk methods have inherent limits, and are growing increasingly demanding and costly. Thus, the idea was born that the components could instead be built up atom by atom in a chemistry ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Graphene Nanoribbons
Graphene nanoribbons (GNRs, also called nano-graphene ribbons or nano-graphite ribbons) are strips of graphene with width less than 100 nm. Graphene ribbons were introduced as a theoretical model by Mitsutaka Fujita and coauthors to examine the edge and nanoscale size effect in graphene. Some earlier studies of graphitic ribbons within the area of conductive polymers in the field of synthetic metals include works by Kazuyoshi Tanaka, Tokio Yamabe and co-authors, Steven Kivelson and Douglas J. Klein. While Tanaka, Yamabe and Kivelson studied so-called zigzag and armchair edges of graphite, Klein introduced a different edge geometry that is frequently referred to as a bearded edge. Production Nanotomy Large quantities of width-controlled GNRs can be produced via graphite nanotomy, where applying a sharp diamond knife on graphite produces graphite nanoblocks, which can then be exfoliated to produce GNRs as shown by Vikas Berry. GNRs can also be produced by "unzipping" or ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Carbon Nanotube Field-effect Transistor
A carbon nanotube field-effect transistor (CNTFET) is a field-effect transistor that utilizes a single carbon nanotube (CNT) or an array of carbon nanotubes as the channel material, instead of bulk silicon, as in the traditional MOSFET structure. There have been major developments since CNTFETs were first demonstrated in 1998. Background According to Moore's law, the dimensions of individual devices in an integrated circuit have been decreased by a factor of approximately two every two years. This scaling down of devices has been the driving force in technological advances since the late 20th century. However, as noted by ITRS 2009 edition, further scaling down has faced serious limits related to fabrication technology and device performances as the critical dimension shrunk down to sub-22 nm range. The limits involve electron tunneling through short channels and thin insulator films, the associated leakage currents, passive power dissipation, short channel effects, and va ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Antimonide
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow- gap semiconductor material from the III- V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. Indium antimonide detectors are sensitive to infrared wavelengths between 1 and 5 μm. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter. History The intermetallic compound was first reported by Liu and Peretti in 1951, who gave its homogeneity range, structure type, and lattice constant. Polycrystalline ingots of InSb were prepared by Heinrich Welker in 1952, although they were not very pure by today's semiconductor standards. Welker was interested in systematically studying the semiconducting p ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tunnel Field-effect Transistor
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor (MOSFET), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics. TFETs switch by modulating quantum tunneling through a barrier instead of modulating thermionic emission over a barrier as in traditional MOSFETs. Because of this, TFETs are not limited by the thermal Maxwell–Boltzmann statistics, Maxwell–Boltzmann tail of carriers, which limits MOSFET drain current subthreshold slope, subthreshold swing to about 60 mV/Decade (log scale), decade of current at room temperature. TFET studies can be traced back to Stuetzer who in 1952 published first investigations of a transistor containing the basic elements of the TFET, a gated p-n junction. The reported surface conductivity control was, however, not related to tunneling. The first TFET was rep ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tunnel Junction
In electronics, a tunnel junction is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles) pass through the barrier by the process of quantum tunnelling. Classically, the electron has zero probability of passing through the barrier. However, according to quantum mechanics, the electron has a non-zero wave amplitude in the barrier, and hence it has some probability of passing through the barrier. Tunnel junctions serve a variety of different purposes. Multijunction photovoltaic cell In multijunction photovoltaic cells, tunnel junctions form the connections between consecutive p-n junctions. They function as an ohmic contact, ohmic electrical contact in the middle of a semiconductor device. Magnetic tunnel junction In magnetic tunnel junctions, electrons tunnel through a thin insulating barrier from one magnetic material to another. This can serve as a basis for a magnetic detector. Superconduc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magneto-electric Spin-orbit
Magneto-electric spin-orbit (MESO) is a technology designed for constructing scalable integrated circuits, that works with a different operating principle than CMOS devices such as MOSFETs, proposed by Intel, that is compatible with CMOS device manufacturing techniques and machinery. MESO devices operate by the coupling of the magnetoelectric effect with the spin orbit coupling. Specifically, the magnetoelectric effect will induce a change in magnetization within the device due to an induced electric field, which can then be read out by the spin orbit coupling component which converts it into an electric charge. This mechanism is analogous to how a CMOS device operates with the source, gate and drain electrodes working together to form a logic gate. As of 2020, the technology is under development by Intel and University of California, Berkeley. The first experiment, conducted in 2020 in nanoGUNE, proved that spin-orbit coupling could be used for implementing MESO. Performance ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Straintronics
Straintronics (from ''strain'' and ''electronics'') is the study of how folds and mechanically induced stresses in a layer of two-dimensional materials can change their electrical properties. It is distinct from twistronics in that the latter involves changes in the angle between two layers of 2D material. However, in such multi-layers if strain is applied to only one layers, which is called heterostrain, strain can have similar effect as twist in changing electronic properties.{{Cite journal , last1=Mesple , first1=Florie , last2=Missaoui , first2=Ahmed , last3=Cea , first3=Tommaso , last4=Huder , first4=Loic , last5=Guinea , first5=Francisco , last6=Trambly de Laissardière , first6=Guy , last7=Chapelier , first7=Claude , last8=Renard , first8=Vincent T. , date=2021-09-17 , title=Heterostrain Determines Flat Bands in Magic-Angle Twisted Graphene Layers , url=https://link.aps.org/doi/10.1103/PhysRevLett.127.126405 , journal=Physical Review Letters , volume=127 , issue=12 , pages=1264 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
