|
Poly Depletion
Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is observed, leading to unpredicted behavior of the electronic circuit. Because of this variation High-κ dielectric, High-k Dielectric Metal Gates (HKMG) were introduced to solve the issue. Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. The latter differs from Crystalline silicon, monocrystalline silicon used for Semiconductor device, semiconductor electronics and solar cells, and from amorphous silicon, used for thin film devices and solar cells. Gate material choice The gate contact may be of polysilicon or metal, previously polysilicon was chosen over metal because the interfacing between polysilicon and gate oxide (Silicon dioxide, SiO2) was favorable. But the conductivity of the poly-silicon layer is very low and because of this low conductivity, the charge accumulation ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behavior under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor. With no VGS, dopant ions added to the body of the FET form a region ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
With Application Of Field
With or WITH may refer to: * With, a preposition in English * Carl Johannes With (1877–1923), Danish doctor and arachnologist * With (character), a character in ''D. N. Angel'' * ''With'' (novel), a novel by Donald Harrington * ''With'' (album), a 2014 album by TVXQ * ''With'' (EP), a 2021 EP by Nam Woo-hyun Radio stations * WITH (FM), a radio station (90.1 FM) licensed to Ithaca, New York, United States * WFOA, a radio station (1230 AM) licensed to Baltimore, Maryland, United States, which used the call sign WITH from 1941 until 2006 * WZFT WZFT (104.3 FM), branded "Z104.3", is a gold-leaning contemporary hit radio station located in Baltimore, Maryland. It is currently owned and operated by iHeartMedia. WZFT's studios are located at The Rotunda shopping center in Baltimore, and ..., a radio station (104.3 FM) licensed to Baltimore, Maryland, United States, which used the call sign WITH-FM from 1949 until 1974 Places * Woodlands Integrated Transport Hub, a bus in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DIBL
Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages. In a classic planar field-effect transistor with a long channel, the bottleneck in channel formation occurs far enough from the drain contact that it is electrostatically shielded from the drain by the combination of the substrate and gate, and so classically the threshold voltage was independent of drain voltage. In short-channel devices this is no longer true: The drain is close enough to gate the channel, and so a high drain voltage can open the bottleneck and turn on the transistor prematurely. The origin of the threshold decrease can be understood as a consequence of charge neutrality: the Yau charge-sharing model. The combined charge in the depletion region of the device and that in the channel of the device is balanced by three electrode charges: the gate, the source and the drain. As drain voltage ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Polysilicon
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process. This process involves distillation of volatile silicon compounds, and their decomposition into silicon at high temperatures. An emerging, alternative process of refinement uses a fluidized bed reactor which is lower cost. The photovoltaic industry also produces upgraded metallurgical-grade silicon (UMG-Si), using metallurgical instead of chemical purification processes for lower cost at the expense of purity. When produced for the electronics industry, polysilicon contains impurity levels of less than one part per billion (ppb), while polycrystalline solar grade silicon (SoG-Si) is generally less pure. In the 2010's, production shifte ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behavior under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor. With no VGS, dopant ions added to the body of the FET form a region ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fermi Level Pinning
Enrico Fermi (; 29 September 1901 – 28 November 1954) was an Italian and naturalized American physicist, renowned for being the creator of the world's first artificial nuclear reactor, the Chicago Pile-1, and a member of the Manhattan Project. He has been called the "architect of the nuclear age" and the "architect of the atomic bomb". He was one of very few physicists to excel in both theoretical and experimental physics. Fermi was awarded the 1938 Nobel Prize in Physics for his work on induced radioactivity by neutron bombardment and for the discovery of transuranium elements. With his colleagues, Fermi filed several patents related to the use of nuclear power, all of which were taken over by the US government. He made significant contributions to the development of statistical mechanics, quantum theory, and nuclear and particle physics. Fermi's first major contribution involved the field of statistical mechanics. After Wolfgang Pauli formulated his exclusion principle i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", , ) is a type of MOSFET, metal–oxide–semiconductor field-effect transistor (MOSFET) semiconductor device fabrication, fabrication process that uses complementary and symmetrical pairs of p-type semiconductor, p-type and n-type semiconductor, n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including Nonvolatile BIOS memory, CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data conversion, data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. In 1948, Bardeen and Brattain patented an insulated-gate transistor (IGFET) with an inversion layer. Bardeen's concept forms the basis of CMOS technology today. The CMOS process was presented by Fairchild Semico ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hafnium Oxide
Hafnium(IV) oxide is the inorganic compound with the formula . Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium(IV) oxide is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of graphite or carbon tetrachloride to give hafnium tetrachloride. Structure Hafnia typically adopts the same structure as zirconia (ZrO2). Unlike TiO2, which features six-coordinate Ti in all phases, zirconia and hafnia consist of seven-coordinate metal centres. A variety of other crystalline phases have been experimentally observed, including cubic fluorite (Fmm), tetragonal (P42/nmc), monoclinic (P21/c) a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dielectric
In electromagnetism, a dielectric (or dielectric medium) is an Insulator (electricity), electrical insulator that can be Polarisability, polarised by an applied electric field. When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor, because they have no loosely bound, or free, electrons that may drift through the material, but instead they shift, only slightly, from their average equilibrium positions, causing dielectric polarisation. Because of Polarisation density, dielectric polarisation, positive charges are displaced in the direction of the field and negative charges shift in the direction opposite to the field. This creates an internal electric field that reduces the overall field within the dielectric itself. If a dielectric is composed of weakly Chemical bond, bonded molecules, those molecules not only become polarised, but also reorient so that their Symmetry axis, symmetry axes a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Work Function
In solid-state physics, the work function (sometimes spelled workfunction) is the minimum thermodynamic work (i.e., energy) needed to remove an electron from a solid to a point in the vacuum immediately outside the solid surface. Here "immediately" means that the final electron position is far from the surface on the atomic scale, but still too close to the solid to be influenced by ambient electric fields in the vacuum. The work function is not a characteristic of a bulk material, but rather a property of the surface of the material (depending on crystal face and contamination). Definition The work function for a given surface is defined by the difference :W = -e\phi - E_, where is the charge of an electron, is the electrostatic potential in the vacuum nearby the surface, and is the Fermi level (electrochemical potential of electrons) inside the material. The term is the energy of an electron at rest in the vacuum nearby the surface. In practice, one directly controls ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Intel
Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California, and Delaware General Corporation Law, incorporated in Delaware. Intel designs, manufactures, and sells computer components such as central processing units (CPUs) and related products for business and consumer markets. It is one of the world's List of largest semiconductor chip manufacturers, largest semiconductor chip manufacturers by revenue, and ranked in the Fortune 500, ''Fortune'' 500 list of the List of largest companies in the United States by revenue, largest United States corporations by revenue for nearly a decade, from 2007 to 2016 Fiscal year, fiscal years, until it was removed from the ranking in 2018. In 2020, it was reinstated and ranked 45th, being the List of Fortune 500 computer software and information companies, 7th-largest technology company in the ranking. It was one of the first companies listed on Nasdaq. Intel supplies List of I ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
