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Jeffrey Elam
Jeffrey Elam is a Distinguished Fellow, Senior Chemist and Group Leader in thApplied Materials Divisionat the U.S. Department of Energy's Argonne National Laboratory. He leads Argonne's atomic layer deposition (ALD) research program, where he directs research and development and commercialization of thin film coating technologies for energy applications. Elam is a fellow of the Northwestern-Argonne Institute of Science and Engineering, and staff member at the Center for Molecular Engineering at Argonne. He also manages the Functional Coatings Group in Argonne's Applied Materials Division and is a principal investigator in the US-Israel Collaborative Water-Energy Research CenterCoWERC, and the Advanced Materials for Energy-Water Systems Center, a DOE Energy Frontier Research Center. Education Elam graduated from Cornell University with a bachelor's degree in chemistry, followed by the University of Chicago with a PhD in physical chemistry in the lab of Donald H. Levy. Elam p ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Argonne National Laboratory
Argonne National Laboratory is a science and engineering research national laboratory operated by UChicago Argonne LLC for the United States Department of Energy. The facility is located in Lemont, Illinois, outside of Chicago, and is the largest national laboratory by size and scope in the Midwest. Argonne had its beginnings in the Metallurgical Laboratory of the University of Chicago, formed in part to carry out Enrico Fermi's work on nuclear reactors for the Manhattan Project during World War II. After the war, it was designated as the first national laboratory in the United States on July 1, 1946. In the post-war era the lab focused primarily on non-weapon related nuclear physics, designing and building the first power-producing nuclear reactors, helping design the reactors used by the United States' nuclear navy, and a wide variety of similar projects. In 1994, the lab's nuclear mission ended, and today it maintains a broad portfolio in basic science research, energy ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Argonne National Laboratory People , a historic hotel in downtown Lima, Ohio, United States
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Argonne may refer to: *The Forest of Argonne, France *Argonne National Laboratory, a U.S. D.O.E. National Laboratory near Chicago, Illinois * Meuse-Argonne Offensive, also called the Battle of Argonne Forest, a World War I battle *Argonne, South Dakota, a ghost town in the United States *Argonne, Wisconsin, a town, US *Argonne (CDP), Wisconsin, an unincorporated community, US * , built in 1916 at Kobe, Japan, by the Kawasaki Dockyards. * , originally designated AP-4 and commissioned 8 November 1921. *Argonne (automobile), a short-lived U.S. car company *Argonne Rebels, an inactive DCI Division I drum and bugle corps from Great Bend, Kansas *Hotel Argonne The Hotel Argonne is a historic hotel in downtown Lima, Ohio, United States. Built in 1919, the hotel was dedicated to veterans of the Meuse-Argonne Offensive during the recently concluded World War.Owen, Lorrie K., ed. ''Dictionary of Ohio His ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Sequential Infiltration Synthesis
Sequential infiltration synthesis (SIS) is a technique derived from atomic layer deposition (ALD) in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors, allowing precise control over the composition, structure, and properties of product materials. This synthesis involves metal-organic vapor-phase precursors and co-reactants dissolving and diffusing into polymers, interacting with the polymer's functional groups via reversible complex formation and/or irreversible chemical reactions, yielding desired composite materials, which may be nanostructured. The metal-organic precursor (A) and co-react vapor (B) are supplied in an alternating ABAB sequence. Following SIS, the organic phase can be removed thermally or chemically to leave only the inorganic components behind. The precise control over the infiltration and synthesis via SIS allows the creation of materials with tailored properties such as composition, mechan ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
American Vacuum Society
AVS: Science and Technology of Materials, Interfaces, and ProcessingAIP: A Federation of the Physical Sciences . (formerly American Vacuum Society) is a founded in 1953 focused on disciplines related to materials, interfaces, and processing. AVS has approximately 4500 members worldwide from |
Transparent Conducting Film
Transparent conducting films (TCFs) are thin films of optically transparent and electrically conductive material. They are an important component in a number of electronic devices including liquid-crystal displays, OLEDs, touchscreens and photovoltaics. While indium tin oxide (ITO) is the most widely used, alternatives include wider-spectrum transparent conductive oxides (TCOs), conductive polymers, metal grids and random metallic networks, carbon nanotubes (CNT), graphene, nanowire meshes and ultra thin metal films. TCFs for photovoltaic applications have been fabricated from both inorganic and organic materials. Inorganic films typically are made up of a layer of transparent conducting oxide (TCO),Conductive Oxide Thin Films Materion Technical Paper, "Transparent Conducti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Tin Oxide
Indium tin oxide (ITO) is a ternary composition of indium, tin and oxygen in varying proportions. Depending on the oxygen content, it can be described as either a ceramic or an alloy. Indium tin oxide is typically encountered as an oxygen-saturated composition with a formulation of 74% In, 18% Sn, and 8% O by weight. Oxygen-saturated compositions are so typical that unsaturated compositions are termed ''oxygen-deficient ITO''. It is transparent and colorless in thin layers, while in bulk form it is yellowish to gray. In the infrared region of the spectrum it acts as a metal-like mirror. Indium tin oxide is one of the most widely used transparent conducting oxides because of its electrical conductivity and optical transparency, the ease with which it can be deposited as a thin film, and its chemical resistance to moisture. As with all transparent conducting films, a compromise must be made between conductivity and transparency, since increasing the thickness and increasing the co ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Sequential Infiltration Synthesis
Sequential infiltration synthesis (SIS) is a technique derived from atomic layer deposition (ALD) in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors, allowing precise control over the composition, structure, and properties of product materials. This synthesis involves metal-organic vapor-phase precursors and co-reactants dissolving and diffusing into polymers, interacting with the polymer's functional groups via reversible complex formation and/or irreversible chemical reactions, yielding desired composite materials, which may be nanostructured. The metal-organic precursor (A) and co-react vapor (B) are supplied in an alternating ABAB sequence. Following SIS, the organic phase can be removed thermally or chemically to leave only the inorganic components behind. The precise control over the infiltration and synthesis via SIS allows the creation of materials with tailored properties such as composition, mechan ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Atomic Layer Deposition
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesising nanomaterials. Introduction During atomic layer deposition a film is grown on a substrate by exposing its surface to alternate gaseous species (typically referred to as precursors or reactants). In contrast to chemical vapor deposition, the precursors are never present simultaneously in the reactor, but they are inserted as a series of sequential, non-overlapping pulses. In each of these pulses the precursor molecules reac ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Seth Darling
Seth B. Darling is the Chief Science & Technology Officer of the Advanced Energy Technologies Directorate at Argonne National Laboratory. He previously served as director of the Center for Molecular Engineering, a research and development organization partnered with the University of Chicago focusing on advanced materials for cleaning water, quantum information science, and polymer science. Darling is also a senior scientist at both the U.S. Department of Energy’s (DOE) Argonne National Laboratory and the University of Chicago’s Pritzker School of Molecular Engineering. He also directs the Advanced Materials for Energy-Water Systems (AMEWS) Center, a DOE Energy Frontier Research Center formed in 2018. Darling has made contributions to the development of new materials for energy and water, including hybrid materials for polymer and perovskite solar cells and membrane materials for water filtration. He has co-created material synthesis techniques that are used commercially, i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
