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IGBT
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a " MOS" gate ( MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs) for motor control in electric cars, trains, variable-speed refrigerators, and air conditioners, as well as lamp ballasts, arc-welding machines, photovoltaic and hybrid inverters, uninterruptible power supply systems (UPS), and induction stoves. Since it is designed to turn on and off rapidly, the IGBT can synthesize complex ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Power Semiconductor Device
A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation mode" (i.e., it is either on or off), and therefore has a design optimized for such usage; it should usually not be used in linear operation. Linear power circuits are widespread as voltage regulators, audio amplifiers, and radio frequency amplifiers. Power semiconductors are found in systems delivering as little as a few tens of milliwatts for a headphone amplifier, up to around a gigawatt in a high voltage direct current transmission line. History The first electronic device used in power circuits was the electrolytic rectifier - an early version was described by a French experimenter, A. Nodon, in 1904. These were briefly popular with early radio experimenters as they ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Variable-frequency Drive
A variable-frequency drive (VFD, or adjustable-frequency drive, adjustable-speed drive, variable-speed drive, AC drive, micro drive, inverter drive, variable voltage variable frequency drive, or drive) is a type of AC motor, AC motor drive (system incorporating a motor) that controls speed and torque by varying the frequency of the input electricity. Depending on its Topology (electrical circuits), topology, it controls the associated voltage or electric current, current variation., quote is per definition on p. 4 of NEMA Standards Publication ICS 7.2-2021. VFDs are used in applications ranging from small appliances to large compressors. Systems using VFDs can be more efficient than hydraulics, hydraulic systems, such as in systems with pumps and damper control for fans. Since the 1980s, power electronics technology has reduced VFD cost and size and has improved performance through advances in semiconductor switching devices, drive topologies, simulation and control techniques ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electric power, power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminal (electronics), terminals for connection to an electronic circuit. A voltage or Electric current, current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions. Physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transisto ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Power MOSFET
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to a degree that the gate voltage needs to be higher than the voltage under control. The design of power MOSFETs was made possible by the evolution of MOSFET and CMOS technology, used for manufacturing integrated circuits since the 1960s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET. The power MOSFET, which is commonly used in power electronics, was adapted from the standard MOSFET and commercially introduced in the 1970s. The power MOSFET is the most common power semicond ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thyristor
A thyristor (, from a combination of Greek language ''θύρα'', meaning "door" or "valve", and ''transistor'' ) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications like inverters and radar generators. It usually consists of four layers of alternating P- and N-type materials. It acts as a bistable switch (or a latch). There are two designs, differing in what triggers the conducting state. In a three-lead thyristor, a small current on its gate lead controls the larger current of the anode-to-cathode path. In a two-lead thyristor, conduction begins when the potential difference between the anode and cathode themselves is sufficiently large (breakdown voltage). The thyristor continues conducting until the voltage across the device is reverse-biased or the voltage is removed (b ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metal–oxide–semiconductor Field-effect Transistor
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOS-controlled Thyristor
An MOS-controlled thyristor (MCT) is a voltage-controlled fully controllable thyristor, controlled by MOSFETs (metal–oxide–semiconductor field-effect transistors). It was invented by V.A.K. Temple in 1984, and was principally similar to the earlier insulated-gate bipolar transistor (IGBT).V.A.K. Temple, "MOS-Controlled Thyristors, IEEE Electron Devices Meeting, Abstract 10.7, pp.282-285, 1984. MCTs are similar in operation to GTO (thyristor), GTO thyristors, but have voltage controlled insulated gates. They have two MOSFETs of opposite conductivity types in their equivalent circuits. One is responsible for turn-on and the other for turn-off. A thyristor with only one MOSFET in its equivalent circuit, which can only be turned on (like normal Silicon controlled rectifier, SCRs), is called an MOS-gated thyristor. Positive voltage on the gate terminal with respect to the cathode turns the thyristor to the on state. Negative voltage on the gate terminal with respect to the anode, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
