|
Exchange Bias
Exchange bias or exchange anisotropy occurs in bilayers (or multilayers) of magnetic materials where the hard magnetization behavior of an antiferromagnetic thin film causes a shift in the soft magnetization curve of a ferromagnetic film. The exchange bias phenomenon is of tremendous utility in magnetic recording, where it is used to pin the state of the readback heads of hard disk drives at exactly their point of maximum sensitivity; hence the term "bias." Fundamental science The essential physics underlying the phenomenon is the exchange interaction between the antiferromagnet and ferromagnet at their interface. Since antiferromagnets have a small or no net magnetization, their spin orientation is only weakly influenced by an externally applied magnetic field. A soft ferromagnetic film which is strongly exchange-coupled to the antiferromagnet will have its interfacial spins pinned. Reversal of the ferromagnet's moment will have an added energetic cost corresponding to the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Antiferromagnetic
In materials that exhibit antiferromagnetism, the magnetic moments of atoms or molecules, usually related to the spins of electrons, align in a regular pattern with neighboring spins (on different sublattices) pointing in opposite directions. This is, like ferromagnetism and ferrimagnetism, a manifestation of ordered magnetism. The phenomenon of antiferromagnetism was first introduced by Lev Landau in 1933. Generally, antiferromagnetic order may exist at sufficiently low temperatures, but vanishes at and above the Néel temperature – named after Louis Néel, who had first identified this type of magnetic ordering. Above the Néel temperature, the material is typically paramagnetic. Measurement When no external field is applied, the antiferromagnetic structure corresponds to a vanishing total magnetization. In an external magnetic field, a kind of ferrimagnetic behavior may be displayed in the antiferromagnetic phase, with the absolute value of one of the sublattice magne ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetoresistance
Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic field. There are a variety of effects that can be called magnetoresistance. Some occur in bulk non-magnetic metals and semiconductors, such as geometrical magnetoresistance, Shubnikov–de Haas oscillations, or the common positive magnetoresistance in metals. Other effects occur in magnetic metals, such as negative magnetoresistance in ferromagnets or anisotropic magnetoresistance (AMR). Finally, in multicomponent or multilayer systems (e.g. magnetic tunnel junctions), giant magnetoresistance (GMR), tunnel magnetoresistance (TMR), colossal magnetoresistance (CMR), and extraordinary magnetoresistance (EMR) can be observed. The first magnetoresistive effect was discovered in 1856 by William Thomson, better known as Lord Kelvin, but he was unable to lower the electrical resistance of anything by more than 5%. Today, systems incl ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ivan K
Ivan () is a Slavic languages, Slavic male given name, connected with the variant of the Greek name (English: John (given name), John) from Hebrew language, Hebrew meaning 'God is gracious'. It is associated worldwide with Slavic countries. The earliest person known to bear the name was Bulgarian tsar Ivan Vladislav of Bulgaria, Ivan Vladislav. It is very popular in Russia, Ukraine, Croatia, Serbia, Bosnia and Herzegovina, Slovenia, Bulgaria, Belarus, North Macedonia, and Montenegro and has also become more popular in Romance-speaking world, Romance-speaking countries since the 20th century. Etymology Ivan is the common Slavic Latin alphabet, Latin spelling, while Cyrillic script, Cyrillic spelling is two-fold: in Bulgarian language, Bulgarian, Russian language, Russian, Macedonian language, Macedonian, Serbian language, Serbian and Montenegrin language, Montenegrin it is Иван, while in Belarusian language, Belarusian and Ukrainian language, Ukrainian it is Іван. The ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Recording Head
A recording head is the physical interface between a recording apparatus and a moving recording medium. Recording heads are generally classified according to the physical principle that allows them to impress their data upon their medium. A recording head is often mechanically paired with a playback head, which, though proximal to, is often discrete from the record head. Types The two most common forms of recording head are: * Magnetic - Magnetic recording heads use the principles of electromagnetism to coerce a paramagnetic recording medium, such as iron oxides, to orient in a readable manner such as magnetic tape. Record heads are constructed of laminated permalloy, ferrite, or sendust. As of 2006, this is the most dominant type of head in use. * Optical - Optical recording heads use the principles of optics and light to impart energy on a recording medium, which accepts the energy in a readable manner, e.g. by melting or photography. Note that Magneto-optical recording, t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Disk Drive
Disk storage (also sometimes called drive storage) is a general category of storage mechanisms where data is recorded by various electronic, magnetic, optical, or mechanical changes to a surface layer of one or more rotating disks. A disk drive is a device implementing such a storage mechanism. Notable types are the hard disk drive (HDD) containing a non-removable disk, the floppy disk drive (FDD) and its removable floppy disk, and various optical disc drives (ODD) and associated optical disc media. (The spelling ''disk'' and ''disc'' are used interchangeably except where trademarks preclude one usage, e.g. the Compact Disc logo. The choice of a particular form is frequently historical, as in IBM's usage of the ''disk'' form beginning in 1956 with the " IBM 350 disk storage unit".) Background Audio information was originally recorded by analog methods (see Sound recording and reproduction). Similarly the first video disc used an analog recording method. In the music i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
General Electric
General Electric Company (GE) is an American multinational conglomerate founded in 1892, and incorporated in New York state and headquartered in Boston. The company operated in sectors including healthcare, aviation, power, renewable energy, digital industry, additive manufacturing and venture capital and finance, but has since divested from several areas, now primarily consisting of the first four segments. In 2020, GE ranked among the Fortune 500 as the 33rd largest firm in the United States by gross revenue. In 2011, GE ranked among the Fortune 20 as the 14th most profitable company, but later very severely underperformed the market (by about 75%) as its profitability collapsed. Two employees of GE – Irving Langmuir (1932) and Ivar Giaever (1973) – have been awarded the Nobel Prize. On November 9, 2021, the company announced it would divide itself into three investment-grade public companies. On July 18, 2022, GE unveiled the brand names of the companies it wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Superparamagnetism
Superparamagnetism is a form of magnetism which appears in small ferromagnetic or ferrimagnetic nanoparticles. In sufficiently small nanoparticles, magnetization can randomly flip direction under the influence of temperature. The typical time between two flips is called the Néel relaxation time. In the absence of an external magnetic field, when the time used to measure the magnetization of the nanoparticles is much longer than the Néel relaxation time, their magnetization appears to be in average zero; they are said to be in the superparamagnetic state. In this state, an external magnetic field is able to magnetize the nanoparticles, similarly to a paramagnet. However, their magnetic susceptibility is much larger than that of paramagnets. The Néel relaxation in the absence of magnetic field Normally, any ferromagnetic or ferrimagnetic material undergoes a transition to a paramagnetic state above its Curie temperature. Superparamagnetism is different from this standard trans ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tunnel Magnetoresistance
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon. Magnetic tunnel junctions are manufactured in thin film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed laser deposition and electron beam physical vapor deposition are also utilized. The junctions are prepared by photolithography. Phenomenological description The direction of the two magnetizations of the ferromagnetic films can be switched individually by an external magnetic field. If the magnetizations are in a parallel orientation ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Giant Magnetoresistance
Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR. The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on spin orientation. The main application of GMR is in magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MRAM
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market. Description Unlike conventional RAM chip technologies, data in MRAM is not stored as electric charge or current flows, but by magnetic storage elements. The elements are formed from two ferromagnetic plates, each of which can hold a magnetization, separated by a thin insulating layer. One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. This configuration is known as a magnetic tunnel junction and is the simplest stru ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Spin Valve
A spin valve is a device, consisting of two or more conducting magnetic materials, whose electrical resistance can change between two values depending on the relative alignment of the magnetization in the layers. The resistance change is a result of the giant magnetoresistive effect. The magnetic layers of the device align "up" or "down" depending on an external magnetic field. In the simplest case, a spin valve consists of a non-magnetic material sandwiched between two ferromagnets, one of which is fixed (pinned) by an antiferromagnet which acts to raise its magnetic coercivity and behaves as a "hard" layer, while the other is free (unpinned) and behaves as a "soft" layer. Due to the difference in coercivity, the soft layer changes polarity at lower applied magnetic field strength than the hard one. Upon application of a magnetic field of appropriate strength, the soft layer switches polarity, producing two distinct states: a parallel, low-resistance state, and an antiparallel, h ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetic Susceptibility
In electromagnetism, the magnetic susceptibility (Latin: , "receptive"; denoted ) is a measure of how much a material will become magnetized in an applied magnetic field. It is the ratio of magnetization (magnetic moment per unit volume) to the applied magnetizing field intensity . This allows a simple classification, into two categories, of most materials' responses to an applied magnetic field: an alignment with the magnetic field, , called paramagnetism, or an alignment against the field, , called diamagnetism. Magnetic susceptibility indicates whether a material is attracted into or repelled out of a magnetic field. Paramagnetic materials align with the applied field and are attracted to regions of greater magnetic field. Diamagnetic materials are anti-aligned and are pushed away, toward regions of lower magnetic fields. On top of the applied field, the magnetization of the material adds its own magnetic field, causing the field lines to concentrate in paramagnetism, or be exc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
