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Spin Valve
A spin valve is a device, consisting of two or more conducting magnetic materials, whose electrical resistance can change between two values depending on the relative alignment of the magnetization in the layers. The resistance change is a result of the giant magnetoresistive effect. The magnetic layers of the device align "up" or "down" depending on an external magnetic field. In the simplest case, a spin valve consists of a non-magnetic material sandwiched between two ferromagnets, one of which is fixed (pinned) by an antiferromagnet which acts to raise its magnetic coercivity and behaves as a "hard" layer, while the other is free (unpinned) and behaves as a "soft" layer. Due to the difference in coercivity, the soft layer changes polarity at lower applied magnetic field strength than the hard one. Upon application of a magnetic field of appropriate strength, the soft layer switches polarity, producing two distinct states: a parallel, low-resistance state, and an antiparallel ...
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Spin Valve Schematic
Spin or spinning most often refers to: * Spin (physics) or particle spin, a fundamental property of elementary particles * Spin quantum number, a number which defines the value of a particle's spin * Spinning (textiles), the creation of yarn or thread by twisting fibers together, traditionally by hand spinning * Spin (geometry), the rotation of an object around an internal axis * Spin (propaganda), an intentionally biased portrayal of something Spin, spinning or spinnin may also refer to: Physics and mathematics * Spin group, Spin(''n''), a particular double cover of the special orthogonal group SO(''n'') ** the corresponding spin algebra, \mathfrak(n) * Spin tensor, a tensor quantity for describing spinning motion in special relativity and general relativity * Spin (aerodynamics), autorotation of an aerodynamically stalled aeroplane * SPIN bibliographic database, an indexing and abstracting service focusing on physics research Textile arts * Spinning (polymers), a process for ...
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Fermi Energy
The Fermi energy is a concept in quantum mechanics usually referring to the energy difference between the highest and lowest occupied single-particle states in a quantum system of non-interacting fermions at absolute zero temperature. In a Fermi gas, the lowest occupied state is taken to have zero kinetic energy, whereas in a metal, the lowest occupied state is typically taken to mean the bottom of the conduction band. The term "Fermi energy" is often used to refer to a different yet closely related concept, the Fermi ''level'' (also called electrochemical potential).The use of the term "Fermi energy" as synonymous with Fermi level (a.k.a. electrochemical potential) is widespread in semiconductor physics. For example:''Electronics (fundamentals And Applications)''by D. Chattopadhyay''Semiconductor Physics and Applications''by Balkanski and Wallis. There are a few key differences between the Fermi level and Fermi energy, at least as they are used in this article: * The Fermi ener ...
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RKKY Interaction
In the physical theory of spin glass magnetization, the Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction models the coupling of nuclear magnetic moments or localized inner d- or f-shell electron spins through conduction electrons. It is named after Malvin Ruderman, Charles Kittel, Tadao Kasuya, and Kei Yosida, the physicists who first proposed and developed the model. Malvin Ruderman and Charles Kittel of the University of California, Berkeley first proposed the model to explain unusually broad nuclear spin resonance lines in natural metallic silver. The theory is an indirect exchange coupling: the hyperfine interaction couples the nuclear spin of one atom to a conduction electron also coupled to the spin of a different nucleus. The assumption of hyperfine interaction turns out to be unnecessary, and can be replaced equally well with the exchange interaction. The simplest treatment assumes a Bloch wavefunction basis and therefore only applies to crystall ...
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Magnetic Tunnel Junction
Tunnel magnetoresistance (TMR) is a magnetoresistance, magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin Insulator (electrical), insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can Quantum tunneling, tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly Quantum mechanics, quantum mechanical phenomenon, and lies in the study of spintronics. Magnetic tunnel junctions are manufactured in thin film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed laser deposition and electron beam physical vapor deposition are also utilized. The junctions are prepared by photolithography. Phenomenological description The direction of the two magnetizations of the ferromagnetic film ...
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Spin-transfer Torque
Spin-transfer torque (STT) is an effect in which the orientation of a magnetic layer in a magnetic tunnel junction or spin valve can be modified using a spin-polarized current. Charge carriers (such as electrons) have a property known as spin which is a small quantity of angular momentum intrinsic to the carrier. An electric current is generally unpolarized (consisting of 50% spin-up and 50% spin-down electrons); a spin polarized current is one with more electrons of either spin. By passing a current through a thick magnetic layer (usually called the “fixed layer”), one can produce a spin-polarized current. If this spin-polarized current is directed into a second, thinner magnetic layer (the “free layer”), the angular momentum can be transferred to this layer, changing its orientation. This can be used to excite oscillations or even flip the orientation of the magnet. The effects are usually seen only in nanometer scale devices. Spin-transfer torque memory Spin- ...
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Magnetoresistive RAM
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as Flash memory, flash RAM and Dynamic random-access memory, DRAM have practical advantages that have so far kept MRAM in a niche role in the market. Description Unlike conventional random-access memory, RAM chip technologies, data in MRAM is not stored as electric charge or current flows, but by magnetism, magnetic storage elements. The elements are formed from two Ferromagnetism, ferromagnetic plates, each of which can hold a magnetization, separated by a thin insulating layer. One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store ...
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Hard Disk
A hard disk drive (HDD), hard disk, hard drive, or fixed disk is an electro-mechanical data storage device that stores and retrieves digital data using magnetic storage with one or more rigid rapidly rotating hard disk drive platter, platters coated with magnetic material. The platters are paired with disk read-and-write head, magnetic heads, usually arranged on a moving actuator arm, which read and write data to the platter surfaces. Data is accessed in a random-access manner, meaning that individual Block (data storage), blocks of data can be stored and retrieved in any order. HDDs are a type of non-volatile storage, retaining stored data when powered off. Modern HDDs are typically in the form of a small disk enclosure, rectangular box. Hard disk drives were introduced by IBM in 1956, and were the dominant secondary storage device for History of general-purpose CPUs, general-purpose computers beginning in the early 1960s. HDDs maintained this position into the modern er ...
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Sensor
A sensor is often defined as a device that receives and responds to a signal or stimulus. The stimulus is the quantity, property, or condition that is sensed and converted into electrical signal. In the broadest definition, a sensor is a device, module, machine, or subsystem that detects events or changes in its environment and sends the information to other electronics, frequently a computer processor. Sensors are used in everyday objects such as touch-sensitive elevator buttons ( tactile sensor) and lamps which dim or brighten by touching the base, and in innumerable applications of which most people are never aware. With advances in micromachinery and easy-to-use microcontroller platforms, the uses of sensors have expanded beyond the traditional fields of temperature, pressure and flow measurement, for example into MARG sensors. Analog sensors such as potentiometers and force-sensing resistors are still widely used. Their applications include manufacturing and machinery ...
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Exchange Interaction
In chemistry and physics, the exchange interaction is a quantum mechanical constraint on the states of indistinguishable particles. While sometimes called an exchange force, or, in the case of fermions, Pauli repulsion, its consequences cannot always be predicted based on classical ideas of force. Both bosons and fermions can experience the exchange interaction. The wave function of identical particles, indistinguishable particles is subject to exchange symmetry: the wave function either changes sign (for fermions) or remains unchanged (for bosons) when two particles are exchanged. The exchange symmetry alters the Expectation value (quantum mechanics), expectation value of the distance between two indistinguishable particles when their wave functions overlap. For fermions the expectation value of the distance increases, and for bosons it decreases (compared to distinguishable particles). The exchange interaction arises from the combination of exchange symmetry and the Coulomb's l ...
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Spin Diffusion
Spin diffusion describes a situation wherein the individual nuclear Spin (physics), spins undergo continuous exchange of energy. This permits Spin polarization, polarization differences within the sample to be reduced on a timescale much shorter than relaxation time, relaxation effects. Spin diffusion is a process by which magnetization can be exchanged spontaneously between spins. The process is driven by dipolar coupling, and is therefore related to internuclear distances. Spin diffusion has been used to study many structural problems in the past, ranging from domain sizes in polymers and disorder in glassy materials to high-resolution crystal structure determination of small molecules and proteins. In solid-state nuclear magnetic resonance, spin diffusion plays a major role in Cross Polarization (CP) experiments. As mentioned before, by transferring the magnetization (and thus the population) from nuclei with different values for the spin-lattice relaxation (''T1''), the overa ...
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Electric Charge
Electric charge (symbol ''q'', sometimes ''Q'') is a physical property of matter that causes it to experience a force when placed in an electromagnetic field. Electric charge can be ''positive'' or ''negative''. Like charges repel each other and unlike charges attract each other. An object with no net charge is referred to as neutral particle, electrically neutral. Early knowledge of how charged substances interact is now called classical electrodynamics, and is still accurate for problems that do not require consideration of quantum mechanics, quantum effects. In an isolated system, the total charge stays the same - the amount of positive charge minus the amount of negative charge does not change over time. Electric charge is carried by subatomic particles. In ordinary matter, negative charge is carried by electrons, and positive charge is carried by the protons in the atomic nucleus, nuclei of atoms. If there are more electrons than protons in a piece of matter, it will have a ...
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Density Of States
In condensed matter physics, the density of states (DOS) of a system describes the number of allowed modes or quantum state, states per unit energy range. The density of states is defined as where N(E)\delta E is the number of states in the system of volume V whose energies lie in the range from E to E+\delta E. It is mathematically represented as a distribution by a probability density function, and it is generally an average over the space and time domains of the various states occupied by the system. The density of states is directly related to the dispersion relations of the properties of the system. High DOS at a specific energy level means that many states are available for occupation. Generally, the density of states of matter is continuous. In isolated systems however, such as atoms or molecules in the gas phase, the density distribution is Discrete distribution, discrete, like a spectral density. Local variations, most often due to distortions of the original system, are ...
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