Indium gallium arsenide phosphide () is a quaternary compound semiconductor material, an alloy of

gallium arsenide Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monoli ...

, gallium phosphide, indium arsenide, or indium phosphide. This compound has applications in photonic devices, due to the ability to tailor its band gap via changes in the alloy mole ratios, ''x'' and ''y''. Indium phosphide-based photonic integrated circuits, or PICs, commonly use alloys of to construct quantum wells, waveguides and other photonic structures, lattice matched to an InP substrate, enabling single-crystal epitaxial growth onto InP. Many devices operating in the

near-infrared Infrared (IR; sometimes called infrared light) is electromagnetic radiation (EMR) with wavelengths longer than that of visible light but shorter than microwaves. The infrared spectral band begins with the waves that are just longer than those of ...

1.55 μm wavelength window utilize this alloy, and are employed as optical components (such as

laser A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word ''laser'' originated as an acronym for light amplification by stimulated emission of radi ...

transmitters, photodetectors and modulators) in C-band communications systems. Fraunhofer Institute for Solar Energy Systems ISE reported a triple-junction solar cell utilizing . The cell has very high efficiency of 35.9% (claimed to be a record).

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Physical properties of gallium arsenide phosphide
III-V semiconductors Indium compounds Gallium compounds Arsenides Phosphides {{CMP-stub

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