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Gallium Indium Arsenide Antimonide Phosphide
Gallium indium arsenide antimonide phosphide ( or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the manufacture of mid-infrared light-emitting diodesRoom temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes, A. Krier, V. M. Smirnov, P. J. Batty, V. I. Vasil’ev, G. S. Gagis, and V. I. Kuchinskii, Appl. Phys. Lett. vol. 90 pp. 211115 (2007) Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, Semiconductors vol. 36 num. 8 pp. 944-949 (2002) and thermophotovoltaic cells.Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic Diodes, K. J. Cheetham, P. J. Carrington, N. B. Cook and A. Krier, Solar Energy Materials and Solar Cells, vol. 95 pp. 534-537 (2011) GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Material
A semiconductor is a material with electrical conductivity between that of a Electrical conductor, conductor and an Insulator (electricity), insulator. Its conductivity can be modified by adding impurities ("doping (semiconductor), doping") to its crystal structure. When two regions with different doping levels are present in the same crystal, they form a semiconductor junction. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits. Semiconductor devices can display a range of diffe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Gallium Arsenide Phosphide
Indium gallium arsenide phosphide () is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium arsenide, or indium phosphide. This compound has applications in photonic devices, due to the ability to tailor its band gap via changes in the alloy mole ratios, ''x'' and ''y''. Indium phosphide-based photonic integrated circuits, or PICs, commonly use alloys of to construct quantum wells, waveguides and other photonic structures, lattice matched to an InP substrate, enabling single-crystal epitaxial growth onto InP. Many devices operating in the near-infrared 1.55 μm wavelength window utilize this alloy, and are employed as optical components (such as laser transmitters, photodetectors and modulators) in C-band communications systems. Fraunhofer Institute for Solar Energy Systems ISE reported a triple-junction solar cell utilizing . The cell has very high efficiency of 35.9% (claimed to be a record). See also * Indium gallium ph ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Antimonides
Antimonides (sometimes called stibnides or stibinides) are compounds of antimony with more electropositive elements. The antimonide ion is but the term refers also to any anionic derivative of antimony. Antimonides are often prepared by heating the elements. Alternatively, sodium electride in ammonia dissolves antimony to give an antimonide upon evaporation. The reduction of antimony leads to alkali metal antimonides of various types, depending on stoichiometry. Known antimonides include isolated ions (in and ). Other motifs include dumbbells in , discrete antimony chains, for example, in , infinite spirals (in NaSb, RbSb), planar four-membered rings , cages in , and net shaped anions in . Some antimonides are semiconductors, e.g. those of the boron group such as indium antimonide Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow- gap semiconductor material from the III- V group used in infrar ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Compounds
Indium is a chemical element; it has symbol In and atomic number 49. It is a silvery-white post-transition metal and one of the softest elements. Chemically, indium is similar to gallium and thallium, and its properties are largely intermediate between the two. It was discovered in 1863 by Ferdinand Reich and Hieronymous Theodor Richter by spectroscopic methods and named for the indigo blue line in its spectrum. Indium is used primarily in the production of flat-panel displays as indium tin oxide (ITO), a transparent and conductive coating applied to glass. It is also used in the semiconductor industry, in low-melting-point metal alloys such as solders and soft-metal high-vacuum seals. It is produced exclusively as a by-product during the processing of the ores of other metals, chiefly from sphalerite and other zinc sulfide ores. Indium has no biological role and its compounds are toxic when inhaled or injected into the bloodstream, although they are poorly absorbed foll ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Compounds
Gallium compounds are compounds containing the element gallium. These compounds are found primarily in the +3 oxidation state. The +1 oxidation state is also found in some compounds, although it is less common than it is for gallium's heavier congeners indium and thallium. For example, the very stable GaCl2 contains both gallium(I) and gallium(III) and can be formulated as GaIGaIIICl4; in contrast, the monochloride is unstable above 0 °C, disproportionating into elemental gallium and gallium(III) chloride. Compounds containing Ga–Ga bonds are true gallium(II) compounds, such as GaS (which can be formulated as Ga24+(S2−)2) and the dioxan complex Ga2Cl4(C4H8O2)2.Greenwood and Earnshaw, p. 240 There are also compounds of gallium with negative oxidation states, ranging from −5 to −1, most of these compounds being magnesium gallides (MgxGay). Aqueous chemistry Strong acids dissolve gallium, forming gallium(III) salts such as (gallium nitrate). Aqueous solutions o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
III-V Semiconductors
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows op ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Gallium Arsenide Antimonide
Thermophotovoltaic (TPV) energy conversion is a direct conversion process from heat to electricity via photons. A basic thermophotovoltaic system consists of a hot object emitting thermal radiation and a photovoltaic cell similar to a solar cell but tuned to the spectrum being emitted from the hot object. As TPV systems generally work at lower temperatures than solar cells, their efficiencies tend to be low. Offsetting this through the use of multi-junction cells based on non-silicon materials is common, but generally very expensive. This currently limits TPV to niche roles like spacecraft power and waste heat collection from larger systems like steam turbines. General concept PV Typical photovoltaics work by creating a p–n junction near the front surface of a thin semiconductor material. When photons above the bandgap energy of the material hit atoms within the bulk lower layer, below the junction, an electron is photoexcited and becomes free of its atom. The junction create ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Arsenide Antimonide Phosphide
Indium arsenide antimonide phosphide () is a semiconductor material. InAsSbP has been used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes and lasers, photodetectors and thermophotovoltaic cells. InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. See also * Aluminium gallium indium phosphide * Gallium indium arsenide antimonide phosphide Gallium indium arsenide antimonide phosphide ( or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the manufacture of mid-infrared light-emitting diodesRoom temperature midinfrared electroluminescence from G ... References III-V semiconductors Indium compounds Arsenides Antimonides Phosphides III-V compounds {{CMP-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminium Gallium Indium Phosphide
Aluminium gallium indium phosphide (, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It has a direct bandgap ranging from ultraviolet to infrared photon energies. AlGaInP is used in heterostructures for high-brightness red, orange, green, and yellow light-emitting diodes. It is also used to make diode lasers. Preparation AlGaInP is typically grown by heteroepitaxy on gallium arsenide or gallium phosphide substrates in order to form a quantum well structure that can be fabricated into different devices. Properties The direct bandgap of AlGaInP encompasses the energy range of visible light (1.7 eV - 3.1 eV). By selecting a specific composition of AlGaInP, the bandgap can be selected to correspond to the energy of a specific wavelength of visible light. For instance, this can be used to obtain LEDs that emit red, orange, or yellow light. Like most other ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Light-emitting Diode
A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device. Appearing as practical electronic components in 1962, the earliest LEDs emitted low-intensity infrared (IR) light. Infrared LEDs are used in remote-control circuits, such as those used with a wide variety of consumer electronics. The first visible-light LEDs were of low intensity and limited to red. Early LEDs were often used as indicator lamps, replacing small incandescent bulbs, and in seven-segment displays. Later developments produced LEDs available in visible, ultraviolet (U ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminium Gallium Phosphide
Aluminium gallium phosphide, , a phosphide of aluminium and gallium, is a semiconductor material. It is an alloy of aluminium phosphide and gallium phosphide. It is used to manufacture light-emitting diode A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corre ...s emitting green light. See also * Aluminium gallium indium phosphide External linksLight-Emitting Diode - An Introduction, Structure, and Applications of LEDs Aluminium compounds Gallium compounds Phosphides III-V semiconductors III-V compounds Zincblende crystal structure {{CMP-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
