Indium gallium arsenide phosphide () is a quaternary compound semiconductor material, an alloy of

gallium arsenide Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monoli ...

, gallium phosphide,

indium arsenide Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to galli ...

, or

indium phosphide Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Manufacturing Indium phosphide ca ...

. This compound has applications in photonic devices, due to the ability to tailor its band gap via changes in the alloy mole ratios, ''x'' and ''y''.

Indium phosphide Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Manufacturing Indium phosphide ca ...

-based photonic integrated circuits, or PICs, commonly use alloys of to construct quantum wells, waveguides and other photonic structures, lattice matched to an InP substrate, enabling single-crystal epitaxial growth onto InP. Many devices operating in the near-infrared 1.55 μm wavelength window utilize this alloy, and are employed as optical components (such as laser transmitters,

photodetectors Photodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There is a wide variety of photodetectors which may be classified by mechanism of detection, such as photoelectric or photochemical effects, or by ...

and modulators) in C-band communications systems. Fraunhofer Institute for Solar Energy Systems ISE reported a triple-junction solar cell utilizing . The cell has very high efficiency of 35.9% (claimed to be a record).

References

External links

* http://www.ioffe.ru/SVA/NSM/Semicond/GaInAsP/ III-V semiconductors Indium compounds Gallium compounds Arsenides Phosphides {{CMP-stub

See also

References

External links