Gallium arsenide phosphide () is a

semiconductor material A semiconductor is a material with electrical conductivity between that of a Electrical conductor, conductor and an Insulator (electricity), insulator. Its conductivity can be modified by adding impurities ("doping (semiconductor), doping") to ...

, an alloy of

gallium arsenide Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monoli ...

and gallium phosphide. It exists in various composition ratios indicated in its formula by the fraction ''x''. Gallium arsenide phosphide is used for manufacturing red, orange and yellow

light-emitting diode A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corre ...

s. It is often grown on gallium phosphide substrates to form a GaP/GaAsP

heterostructure A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in m ...

. In order to tune its electronic properties, it may be doped with

nitrogen Nitrogen is a chemical element; it has Symbol (chemistry), symbol N and atomic number 7. Nitrogen is a Nonmetal (chemistry), nonmetal and the lightest member of pnictogen, group 15 of the periodic table, often called the Pnictogen, pnictogens. ...

(GaAsP:N).

References

III-V semiconductors Gallium compounds Arsenides Phosphides III-V compounds Light-emitting diode materials Zincblende crystal structure {{CMP-stub

See also

References