AlSiC
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AlSiC, pronounced "alsick", is a
metal matrix composite In materials science, a metal matrix composite (MMC) is a composite material with fibers or particles dispersed in a metallic matrix, such as copper, aluminum, or steel. The secondary phase is typically a ceramic (such as alumina or silicon carb ...
consisting of
aluminium Aluminium (or aluminum in North American English) is a chemical element; it has chemical symbol, symbol Al and atomic number 13. It has a density lower than that of other common metals, about one-third that of steel. Aluminium has ...
matrix with
silicon carbide Silicon carbide (SiC), also known as carborundum (), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder a ...
particles. It has high
thermal conductivity The thermal conductivity of a material is a measure of its ability to heat conduction, conduct heat. It is commonly denoted by k, \lambda, or \kappa and is measured in W·m−1·K−1. Heat transfer occurs at a lower rate in materials of low ...
(180–200 W/m K), and its
thermal expansion Thermal expansion is the tendency of matter to increase in length, area, or volume, changing its size and density, in response to an increase in temperature (usually excluding phase transitions). Substances usually contract with decreasing temp ...
can be adjusted to match other materials, e.g.
silicon Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid (sometimes considered a non-metal) and semiconductor. It is a membe ...
and
gallium arsenide Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monoli ...
chips and various
ceramic A ceramic is any of the various hard, brittle, heat-resistant, and corrosion-resistant materials made by shaping and then firing an inorganic, nonmetallic material, such as clay, at a high temperature. Common examples are earthenware, porcela ...
s. It is chiefly used in
microelectronics Microelectronics is a subfield of electronics. As the name suggests, microelectronics relates to the study and manufacture (or microfabrication) of very small electronic designs and components. Usually, but not always, this means micrometre ...
as
substrate Substrate may refer to: Physical layers *Substrate (biology), the natural environment in which an organism lives, or the surface or medium on which an organism grows or is attached ** Substrate (aquatic environment), the earthy material that exi ...
for
power semiconductor device A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC ...
s and high density
multi-chip module A multi-chip module (MCM) is generically an electronic assembly (such as a package with a number of conductor terminals or Lead (electronics), "pins") where multiple integrated circuits (ICs or "chips"), semiconductor Die (integrated circuit), d ...
s, where it aids with removal of
waste heat Waste heat is heat that is produced by a machine, or other process that uses energy, as a byproduct of doing work. All such processes give off some waste heat as a fundamental result of the laws of thermodynamics. Waste heat has lower utility ...
. Several variants exist: *AlSiC-9, containing 37 vol.% of A 356.2
aluminium alloy An aluminium alloy ( UK/IUPAC) or aluminum alloy ( NA; see spelling differences) is an alloy in which aluminium (Al) is the predominant metal. The typical alloying elements are copper, magnesium, manganese, silicon, tin, nickel and zinc. There ...
and 63 vol.% silicon carbide. Its thermal conductivity is 190–200 W/m K. Its thermal expansion roughly matches
gallium arsenide Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monoli ...
,
silicon Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid (sometimes considered a non-metal) and semiconductor. It is a membe ...
,
indium phosphide Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende (crystal structure), zincblende") crystal structure, identical to that of gallium arsenide, GaAs and most of the List of ...
,
alumina Aluminium oxide (or aluminium(III) oxide) is a chemical compound of aluminium and oxygen with the chemical formula . It is the most commonly occurring of several aluminium oxides, and specifically identified as aluminium oxide. It is commonly ...
,
aluminium nitride Aluminium nitride ( Al N) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potent ...
,
silicon nitride Silicon nitride is a chemical compound of the elements silicon and nitrogen. (''Trisilicon tetranitride'') is the most thermodynamically stable and commercially important of the silicon nitrides, and the term ″''Silicon nitride''″ commonly re ...
, and Direct Bonded Copper aluminium nitride. It is also compatible with some
low temperature co-fired ceramic Co-fired ceramic devices are monolithic, ceramic microelectronic devices where the entire ceramic support structure and any conductive, resistive, and dielectric materials are fired in a kiln at the same time. Typical devices include capacitors, i ...
s, e.g. Ferro A6M and A6S, Heraeus CT 2000, and Kyocera GL560. Its density at 25 °C is 3.01 g/cm3. *AlSiC-10, containing 45 vol.% of A 356.2 aluminium alloy and 55 vol.% silicon carbide. Its thermal conductivity is 190–200 W/m K. Its thermal expansion roughly matches e.g.
printed circuit board A printed circuit board (PCB), also called printed wiring board (PWB), is a Lamination, laminated sandwich structure of electrical conduction, conductive and Insulator (electricity), insulating layers, each with a pattern of traces, planes ...
s,
FR-4 FR-4 (or FR4) is a NEMA grade designation for glass-reinforced epoxy laminate material. FR-4 is a composite material composed of woven fiberglass cloth with an epoxy resin binder that is flame resistant (''self-extinguishing''). "FR" stands for ...
, and Duroid. Its density at 25 °C is 2.96 g/cm3. *AlSiC-12, containing 63 vol.% of A 356.2 aluminium alloy and 37 vol.% silicon carbide. Its thermal conductivity is 170–180 W/m K. It is compatible with generally the same materials as AlSiC-10. Its density at 25 °C is 2.89 g/cm3. AlSiC composites are suitable replacements for
copper Copper is a chemical element; it has symbol Cu (from Latin ) and atomic number 29. It is a soft, malleable, and ductile metal with very high thermal and electrical conductivity. A freshly exposed surface of pure copper has a pinkish-orang ...
-
molybdenum Molybdenum is a chemical element; it has Symbol (chemistry), symbol Mo (from Neo-Latin ''molybdaenum'') and atomic number 42. The name derived from Ancient Greek ', meaning lead, since its ores were confused with lead ores. Molybdenum minerals hav ...
( CuMo) and copper-
tungsten Tungsten (also called wolfram) is a chemical element; it has symbol W and atomic number 74. It is a metal found naturally on Earth almost exclusively in compounds with other elements. It was identified as a distinct element in 1781 and first ...
( CuW) alloys; they have about 1/3 the weight of copper, 1/5 of CuMo, and 1/6 of CuW, making them suitable for weight-sensitive applications; they are also stronger and stiffer than copper. They can be used as heatsinks, substrates for power electronics (e.g.
IGBT An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that ...
s and high-power
LED A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresp ...
s), heat spreaders, housings for electronics, and lids for chips, e.g.
microprocessor A microprocessor is a computer processor (computing), processor for which the data processing logic and control is included on a single integrated circuit (IC), or a small number of ICs. The microprocessor contains the arithmetic, logic, a ...
s and ASICs. Metal and ceramic inserts and channels for a
coolant A coolant is a substance, typically liquid, that is used to reduce or regulate the temperature of a system. An ideal coolant has high thermal capacity, low viscosity, is low-cost, non-toxic, chemically inert and neither causes nor promotes corr ...
can be integrated into the parts during manufacture. AlSiC composites can be produced relatively inexpensively (USD 2-4/lb in large series); the dedicated tooling however causes large up-front expenses, making AlSiC more suitable for mature designs.
Heat pipe A heat pipe is a heat-transfer device that employs phase transition to transfer heat between two solid interfaces. At the hot interface of a heat pipe, a volatile liquid in contact with a thermally conductive solid surface turns into a vapor ...
s can be embedded into AlSiC, raising effective heat conductivity to 500–800 W/m K. AlSiC parts are typically manufactured by
near net shape Near-net-shape is an industrial manufacturing technique. As the name implies, the initial production of the item is very close to the final, or ''net'', shape. This reduces the need for surface finishing. By minimizing the use of finishing methods ...
approach, by creating a SiC preform by
metal injection molding Metal injection molding (MIM) is a metalworking process in which finely-powdered metal is mixed with binder material to create a "feedstock" that is then shaped and solidified using injection molding. Metal injection molding combines the mos ...
of an SiC-binder slurry, firing to remove the binder, then infiltration under pressure with molten aluminium. Parts can be made with sufficient tolerance to not require further machining. The material is fully dense, without voids, and is hermetic. Its high stiffness and low density suits larger parts with thin walls such as fins for heat dissipation. AlSiC can be plated with
nickel Nickel is a chemical element; it has symbol Ni and atomic number 28. It is a silvery-white lustrous metal with a slight golden tinge. Nickel is a hard and ductile transition metal. Pure nickel is chemically reactive, but large pieces are slo ...
and nickel-
gold Gold is a chemical element; it has chemical symbol Au (from Latin ) and atomic number 79. In its pure form, it is a brightness, bright, slightly orange-yellow, dense, soft, malleable, and ductile metal. Chemically, gold is a transition metal ...
, or by other metals by
thermal spraying Thermal spraying techniques are coating processes in which melted (or heated) materials are sprayed onto a surface. The "feedstock" (coating precursor) is heated by electrical (plasma or arc) or chemical means (combustion flame). Thermal sprayi ...
. Ceramic and metal insets can be inserted into the preform before aluminium infiltration, resulting in a hermetic seal. AlSiC can be also prepared by mechanical alloying. When lower degree of SiC content is used, parts can be stamped from AlSiC sheets. The aluminium matrix contains high amount of
dislocation In materials science, a dislocation or Taylor's dislocation is a linear crystallographic defect or irregularity within a crystal structure that contains an abrupt change in the arrangement of atoms. The movement of dislocations allow atoms to sli ...
s, responsible for the strength of the material. The dislocations are introduced during cooling by the SiC particles, due to their different thermal expansion coefficient. A similar material is
Dymalloy Dymalloy is a metal matrix composite of 20% copper and 80% silver alloy matrix with type I diamond. It has a very high thermal conductivity of 420 W/(m·K), and its thermal expansion can be adjusted to match other materials, such as the silicon an ...
, with copper-silver alloy instead of aluminium and
diamond Diamond is a Allotropes of carbon, solid form of the element carbon with its atoms arranged in a crystal structure called diamond cubic. Diamond is tasteless, odourless, strong, brittle solid, colourless in pure form, a poor conductor of e ...
instead of silicon carbide. Other materials are copper reinforced with
carbon fiber Carbon fiber-reinforced polymers (American English), carbon-fibre-reinforced polymers ( Commonwealth English), carbon-fiber-reinforced plastics, carbon-fiber reinforced-thermoplastic (CFRP, CRP, CFRTP), also known as carbon fiber, carbon comp ...
, diamond-reinforced aluminium, reinforced carbon-carbon, and pyrolytic graphite.


References

{{aluminium alloys Aluminium alloys Metal matrix composites Chip carriers