Aluminium indium antimonide, also known as indium aluminium antimonide or AlInSb ( Al_x In_1-x Sb), is a ternary

III-V semiconductor Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of ...

compound. It can be considered as an alloy between

aluminium antimonide Aluminium (or aluminum in North American English) is a chemical element; it has symbol Al and atomic number 13. It has a density lower than that of other common metals, about one-third that of steel. Aluminium has a great affinity ...

and

indium antimonide Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow- gap semiconductor material from the III- V group used in infrared detectors, including thermal imaging cameras, FLIR sy ...

. The alloy can contain any ratio between aluminium and indium. AlInSb refers generally to any composition of the alloy.

Preparation

AlInSb films have been grown by

molecular beam epitaxy Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors. MBE is used to make diodes and MOSFETs (MOS field-effect transis ...

and

metalorganic chemical vapor deposition Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. ...

gallium arsenide Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monoli ...

and

gallium antimonide Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm. It has a room temperature direct bandgap of approximately 0.73 eV. History The int ...

substrates. It is typically incorporated into layered heterostructures with other III-V compounds.

Electronic Properties

The

bandgap In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the ...

and lattice constant of AlInSb alloys are between those of pure AlSb (a = 0.614 nm, E_g = 1.62 eV) and

InSb Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow- gap semiconductor material from the III- V group used in infrared detectors, including thermal imaging cameras, FLIR syst ...

(a = 0.648 nm, E_g = 0.17 eV). At an intermediate composition (approximately x = 0.72 – 0.73), the bandgap transitions from an indirect gap, like that of pure AlSb, to a direct gap, like that of pure InSb.

Applications

AlInSb has been employed as a barrier material and

dislocation In materials science, a dislocation or Taylor's dislocation is a linear crystallographic defect or irregularity within a crystal structure that contains an abrupt change in the arrangement of atoms. The movement of dislocations allow atoms to sli ...

filter for InSb

quantum well A quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occup ...

s and in InSb-based devices. AlInSb has been used as the active region of

LED A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresp ...

s and

photodiodes A photodiode is a semiconductor diode sensitive to photon radiation, such as visible light, infrared or ultraviolet radiation, X-rays and gamma rays. It produces an electrical current when it absorbs photons. This can be used for detection and me ...

to generate and detect light at

mid-infrared Infrared (IR; sometimes called infrared light) is electromagnetic radiation (EMR) with wavelengths longer than that of visible light but shorter than microwaves. The infrared spectral band begins with the waves that are just longer than those of ...

wavelengths. These devices can be optimized for performance around 3.3 μm, a wavelength of interest for

methane Methane ( , ) is a chemical compound with the chemical formula (one carbon atom bonded to four hydrogen atoms). It is a group-14 hydride, the simplest alkane, and the main constituent of natural gas. The abundance of methane on Earth makes ...

gas sensing.

References

{{Antimony compounds Antimonides Aluminium compounds Indium compounds III-V compounds