AlInSb
Aluminium indium antimonide, also known as indium aluminium antimonide or AlInSb (Aluminium, AlxIndium, In1-xAntimony, Sb), is a ternary III-V, III-V semiconductor compound. It can be considered as an alloy between aluminium antimonide and indium antimonide. The alloy can contain any ratio between aluminium and indium. AlInSb refers generally to any composition of the alloy. Preparation AlInSb films have been grown by molecular beam epitaxy and metalorganic chemical vapor deposition on gallium arsenide and gallium antimonide substrates. It is typically incorporated into layered heterostructures with other III-V compounds. Electronic Properties The bandgap and lattice constant of AlInSb alloys are between those of pure AlSb (a = 0.614 nm, Eg = 1.62 eV) and InSb (a = 0.648 nm, Eg = 0.17 eV). At an intermediate composition (approximately x = 0.72 – 0.73), the bandgap transitions from an Indirect band gap, indirect gap, like that of pure AlSb, to a Direct band gap, direct gap, li ...
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