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Subthreshold Slope
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour—though being controlled by the gate A gate or gateway is a point of entry to or from a space enclosed by walls. The word is derived from Proto-Germanic language, Proto-Germanic ''*gatan'', meaning an opening or passageway. Synonyms include yett (which comes from the same root w ... terminal—is similar to the exponentially decreasing current of a forward biased diode. Therefore, a plot of drain current versus gate voltage with drain, source, and bulk voltages fixed will exhibit approximately log-linear behaviour in this MOSFET operating regime. Its slope is the subthreshold slope. The subthreshold slope is also the reciprocal value of the subthreshold swing ''Ss-th'' which is usually given as:''Physics of Semiconductor Devices'', S. M. Sze. New York: Wiley, 3rd ed., with Kwok K. Ng, 2007, chapter 6.2.4, p. 315, . ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Current–voltage Characteristic
A current–voltage characteristic or I–V curve (current–voltage curve) is a relationship, typically represented as a chart or graph, between the electric current through a circuit, device, or material, and the corresponding voltage, or potential difference, across it. In electronics In electronics, the relationship between the direct current (DC) through an electronic device and the DC voltage across its terminals is called a current–voltage characteristic of the device. Electronic engineering, Electronic engineers use these charts to determine basic parameters of a device and to model its behavior in an electrical circuit. These characteristics are also known as I–V curves, referring to the standard symbols for current and voltage. In electronic components with more than two terminals, such as vacuum tubes and transistors, the current–voltage relationship at one pair of terminals may depend on the current or voltage on a third terminal. This is usually display ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Subthreshold Conduction
Subthreshold conduction or subthreshold leakage or subthreshold drain current is the electric current, current between the source and drain of a MOSFET when the transistor is in subthreshold region, or MOSFET#Modes of operation, weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its Threshold Voltage, threshold voltage, which is the minimum gate voltage required to switch the device between ''on'' and ''off'' states. However, as the drain current in a MOS device varies exponentially with gate voltage, the conduction does not immediately become zero when the threshold voltage is reached. Rather it continues showing an exponential behavior with respect to the subthreshold gate voltage. When plotted against the applied gate voltage, this subthreshold drain current exhibits a Semi-log plot, log-linear slope, which is defined as the subthreshold slope. Subthreshold slope is used as a fi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: ''source'', ''gate'', and ''drain''. FETs control the current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal–oxide–semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by the Austr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Diode
A diode is a two-Terminal (electronics), terminal electronic component that conducts electric current primarily in One-way traffic, one direction (asymmetric electrical conductance, conductance). It has low (ideally zero) Electrical resistance and conductance, resistance in one direction and high (ideally infinite) resistance in the other. A semiconductor diode, the most commonly used type today, is a Crystallinity, crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. It has an Exponential function, exponential current–voltage characteristic. Semiconductor diodes were the first Semiconductor device, semiconductor electronic devices. The discovery of asymmetric electrical conduction across the contact between a Crystal, crystalline mineral and a metal was made by German physicist Ferdinand Braun in 1874. Today, most diodes are made of silicon, but other semiconducting materials such as gallium arsenide and germanium are also ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Reciprocal (mathematics)
In mathematics, a multiplicative inverse or reciprocal for a number ''x'', denoted by 1/''x'' or ''x''−1, is a number which when multiplied by ''x'' yields the multiplicative identity, 1. The multiplicative inverse of a fraction ''a''/''b'' is ''b''/''a''. For the multiplicative inverse of a real number, divide 1 by the number. For example, the reciprocal of 5 is one fifth (1/5 or 0.2), and the reciprocal of 0.25 is 1 divided by 0.25, or 4. The reciprocal function, the function ''f''(''x'') that maps ''x'' to 1/''x'', is one of the simplest examples of a function which is its own inverse (an involution). Multiplying by a number is the same as dividing by its reciprocal and vice versa. For example, multiplication by 4/5 (or 0.8) will give the same result as division by 5/4 (or 1.25). Therefore, multiplication by a number followed by multiplication by its reciprocal yields the original number (since the product of the number and its reciprocal is 1). The term ''reciproca ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Depletion Region
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region, or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers dissipate, or been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region, leaving none to carry a current. Understanding the depletion region is key to explaining modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena. Formation in a p–n junction A depletion region forms instantaneously across a p–n junction. It is most easily described when the junction is in thermal equilibrium or in a steady stat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Boltzmann Constant
The Boltzmann constant ( or ) is the proportionality factor that relates the average relative thermal energy of particles in a ideal gas, gas with the thermodynamic temperature of the gas. It occurs in the definitions of the kelvin (K) and the molar gas constant, in Planck's law of black-body radiation and Boltzmann's entropy formula, and is used in calculating Johnson–Nyquist noise, thermal noise in resistors. The Boltzmann constant has Dimensional analysis, dimensions of energy divided by temperature, the same as entropy and heat capacity. It is named after the Austrian scientist Ludwig Boltzmann. As part of the 2019 revision of the SI, the Boltzmann constant is one of the seven "Physical constant, defining constants" that have been defined so as to have exact finite decimal values in SI units. They are used in various combinations to define the seven SI base units. The Boltzmann constant is defined to be exactly joules per kelvin, with the effect of defining the SI unit ke ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
