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Single-electron Transistor
A single-electron transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a tunnel junction between source/drain to a quantum dot (conductive island). Moreover, the electrical potential of the island can be tuned by a third electrode, known as the gate, which is capacitively coupled to the island. The conductive island is sandwiched between two tunnel junctions modeled by capacitors, C_ and C_, and resistors, R_ and R_, in parallel. History A new subfield of condensed matter physics began in 1977 when David Thouless pointed out that, when made small enough, the size of a conductor affects its electronic properties. This was followed by mesoscopic physics research in the 1980s based on the submicron-size of systems investigated. Thus began research related to the single-electron transistor. The first single-electron transistor based on the phenomenon of Coulomb blockade was reported in 1986 by Sov ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
SET Schematic2
Set, The Set, SET or SETS may refer to: Science, technology, and mathematics Mathematics *Set (mathematics), a collection of elements *Category of sets, the category whose objects and morphisms are sets and total functions, respectively Electronics and computing *Set (abstract data type), a data type in computer science that is a collection of unique values ** Set (C++), a set implementation in the C++ Standard Library * Set (command), a command for setting values of environment variables in Unix and Microsoft operating-systems * Secure Electronic Transaction, a standard protocol for securing credit card transactions over insecure networks * Single-electron transistor, a device to amplify currents in nanoelectronics * Single-ended triode, a type of electronic amplifier * Set!, a programming syntax in the scheme programming language Biology and psychology * Set (psychology), a set of expectations which shapes perception or thought *Set or sett, a badger's den *Set, a small tuber ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ohm's Law
Ohm's law states that the electric current through a Electrical conductor, conductor between two Node (circuits), points is directly Proportionality (mathematics), proportional to the voltage across the two points. Introducing the constant of proportionality, the Electrical resistance, resistance, one arrives at the three mathematical equations used to describe this relationship: V = IR \quad \text\quad I = \frac \quad \text\quad R = \frac where is the current through the conductor, ''V'' is the voltage measured across the conductor and ''R'' is the electrical resistance, resistance of the conductor. More specifically, Ohm's law states that the ''R'' in this relation is constant, independent of the current. If the resistance is not constant, the previous equation cannot be called ''Ohm's law'', but it can still be used as a definition of Electrical resistance and conductance#Static and differential resistance, static/DC resistance. Ohm's law is an empirical law, empirical rel ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor Model
Transistors are simple devices with complicated behavior. In order to ensure the reliable operation of circuits employing transistors, it is necessary to scientifically model the physical phenomena observed in their operation using transistor models. There exists a variety of different models that range in complexity and in purpose. Transistor models divide into two major groups: models for device design and models for circuit design. Models for device design The modern transistor has an internal structure that exploits complex physical mechanisms. Device design requires a detailed understanding of how device manufacturing processes such as ion implantation, impurity diffusion, oxide growth, annealing, and etching affect device behavior. Process models simulate the manufacturing steps and provide a microscopic description of device "geometry" to the device simulator. "Geometry" does not mean readily identified geometrical features such as a planar or wrap-around gate structur ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", , ) is a type of MOSFET, metal–oxide–semiconductor field-effect transistor (MOSFET) semiconductor device fabrication, fabrication process that uses complementary and symmetrical pairs of p-type semiconductor, p-type and n-type semiconductor, n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including Nonvolatile BIOS memory, CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data conversion, data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. In 1948, Bardeen and Brattain patented an insulated-gate transistor (IGFET) with an inversion layer. Bardeen's concept forms the basis of CMOS technology today. The CMOS process was presented by Fairchild Semico ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Current–voltage Characteristic
A current–voltage characteristic or I–V curve (current–voltage curve) is a relationship, typically represented as a chart or graph, between the electric current through a circuit, device, or material, and the corresponding voltage, or potential difference, across it. In electronics In electronics, the relationship between the direct current (DC) through an electronic device and the DC voltage across its terminals is called a current–voltage characteristic of the device. Electronic engineering, Electronic engineers use these charts to determine basic parameters of a device and to model its behavior in an electrical circuit. These characteristics are also known as I–V curves, referring to the standard symbols for current and voltage. In electronic components with more than two terminals, such as vacuum tubes and transistors, the current–voltage relationship at one pair of terminals may depend on the current or voltage on a third terminal. This is usually display ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Uncertainty Principle
The uncertainty principle, also known as Heisenberg's indeterminacy principle, is a fundamental concept in quantum mechanics. It states that there is a limit to the precision with which certain pairs of physical properties, such as position and momentum, can be simultaneously known. In other words, the more accurately one property is measured, the less accurately the other property can be known. More formally, the uncertainty principle is any of a variety of mathematical inequalities asserting a fundamental limit to the product of the accuracy of certain related pairs of measurements on a quantum system, such as position, ''x'', and momentum, ''p''. Such paired-variables are known as complementary variables or canonically conjugate variables. First introduced in 1927 by German physicist Werner Heisenberg, the formal inequality relating the standard deviation of position ''σx'' and the standard deviation of momentum ''σp'' was derived by Earle Hesse Kennard later that ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Elementary Charge
The elementary charge, usually denoted by , is a fundamental physical constant, defined as the electric charge carried by a single proton (+1 ''e'') or, equivalently, the magnitude of the negative electric charge carried by a single electron, which has charge −1 . In SI units, the coulomb is defined such that the value of the elementary charge is exactly or 160.2176634 zeptocoulombs (zC). Since the 2019 revision of the SI, the seven SI base units are defined in terms of seven fundamental physical constants, of which the elementary charge is one. In the centimetre–gram–second system of units (CGS), the corresponding quantity is . Robert A. Millikan and Harvey Fletcher's oil drop experiment first directly measured the magnitude of the elementary charge in 1909, differing from the modern accepted value by just 0.6%. Under assumptions of the then-disputed atomic theory, the elementary charge had also been indirectly inferred to ~3% accuracy from blackb ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Tunnelling
In physics, quantum tunnelling, barrier penetration, or simply tunnelling is a quantum mechanical phenomenon in which an object such as an electron or atom passes through a potential energy barrier that, according to classical mechanics, should not be passable due to the object not having sufficient energy to pass or surmount the barrier. Tunneling is a consequence of the wave nature of matter, where the quantum wave function describes the state of a particle or other physical system, and wave equations such as the Schrödinger equation describe their behavior. The probability of transmission of a wave packet through a barrier decreases exponentially with the barrier height, the barrier width, and the tunneling particle's mass, so tunneling is seen most prominently in low-mass particles such as electrons or protons tunneling through microscopically narrow barriers. Tunneling is readily detectable with barriers of thickness about 1–3 nm or smaller for electrons, and abou ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Coulomb Blockade
In mesoscopic physics, a Coulomb blockade (CB), named after Charles-Augustin de Coulomb's electrical force, is the decrease in electrical conductance at small bias voltages of a small electronic device comprising at least one low-capacitance tunnel junction. Because of the CB, the conductance of a device may not be constant at low bias voltages, but disappear for biases under a certain threshold, i.e. no current flows. Coulomb blockade can be observed by making a device very small, like a quantum dot. When the device is small enough, electrons inside the device will create a strong Coulomb repulsion preventing other electrons to flow. Thus, the device will no longer follow Ohm's law and the current-voltage relation of the Coulomb blockade looks like a staircase. Even though the Coulomb blockade can be used to demonstrate the quantization of the electric charge, it remains a classical effect and its main description does not require quantum mechanics. However, when few ele ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
