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Piezoresistive Effect
The piezoresistive effect is a change in the electrical resistivity and conductivity, electrical resistivity of a semiconductor or metal when deformation (mechanics), mechanical strain is applied. In contrast to the piezoelectricity, piezoelectric effect, the piezoresistive effect causes a change only in electrical resistance, not in electric potential. History The change of electrical resistance in metal devices due to an applied mechanical load was first discovered in 1856 by Lord Kelvin. With single crystal silicon becoming the material of choice for the design of analog and digital circuits, the large piezoresistive effect in silicon and germanium was first discovered in 1954 (Smith 1954). Mechanism In conducting and semi-conducting materials, changes in inter-atomic spacing resulting from strain affect the bandgaps, making it easier (or harder depending on the material and strain) for electrons to be raised into the conduction band. This results in a change in resistiv ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrical Resistivity And Conductivity
Electrical resistivity (also called volume resistivity or specific electrical resistance) is a fundamental specific property of a material that measures its electrical resistance or how strongly it resists electric current. A low resistivity indicates a material that readily allows electric current. Resistivity is commonly represented by the Greek alphabet, Greek letter (Rho (letter), rho). The SI unit of electrical resistivity is the ohm-metre (Ω⋅m). For example, if a solid cube of material has sheet contacts on two opposite faces, and the Electrical resistance, resistance between these contacts is , then the resistivity of the material is . Electrical conductivity (or specific conductance) is the reciprocal of electrical resistivity. It represents a material's ability to conduct electric current. It is commonly signified by the Greek letter (Sigma (letter), sigma), but (kappa) (especially in electrical engineering) and (gamma) are sometimes used. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Planar Process
The planar process is a semiconductor device fabrication, manufacturing process used in the semiconductor industry to build individual components of a transistor, and in turn, connect those transistors together. It is the primary process by which silicon integrated circuit chips are built, and it is the most commonly used method of producing Junction (electricity), junctions during the manufacture of semiconductor devices. The process utilizes the surface passivation and thermal oxidation methods. The planar process was developed at Fairchild Semiconductor in 1959 and process proved to be one of the most important single advances in semiconductor technology. Overview The key concept is to view a circuit in its two-dimensional projection (a plane), thus allowing the use of photographic processing concepts such as film negatives to mask the projection of light exposed chemicals. This allows the use of a series of exposures on a substrate (silicon) to create silicon oxide (insulators ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Piezoresistor
The piezoresistive effect is a change in the electrical resistivity of a semiconductor or metal when mechanical strain is applied. In contrast to the piezoelectric effect, the piezoresistive effect causes a change only in electrical resistance, not in electric potential. History The change of electrical resistance in metal devices due to an applied mechanical load was first discovered in 1856 by Lord Kelvin. With single crystal silicon becoming the material of choice for the design of analog and digital circuits, the large piezoresistive effect in silicon and germanium was first discovered in 1954 (Smith 1954). Mechanism In conducting and semi-conducting materials, changes in inter-atomic spacing resulting from strain affect the bandgaps, making it easier (or harder depending on the material and strain) for electrons to be raised into the conduction band. This results in a change in resistivity of the material. Within a certain range of strain this relationship is linear, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Pascal (unit)
The pascal (symbol: Pa) is the unit of pressure in the International System of Units (SI). It is also used to quantify internal pressure, stress, Young's modulus, and ultimate tensile strength. The unit, named after Blaise Pascal, is an SI coherent derived unit defined as one newton per square metre (N/m2). It is also equivalent to 10 barye (10 Ba) in the CGS system. Common multiple units of the pascal are the hectopascal (1 hPa = 100 Pa), which is equal to one millibar, and the kilopascal (1 kPa = 1000 Pa), which is equal to one centibar. The unit of measurement called '' standard atmosphere (atm)'' is defined as . Meteorological observations typically report atmospheric pressure in hectopascals per the recommendation of the World Meteorological Organization, thus a standard atmosphere (atm) or typical sea-level air pressure is about 1013 hPa. Reports in the United States typically use inches of mercury or millibars (hectopascals). In Cana ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Piezoresistor
The piezoresistive effect is a change in the electrical resistivity of a semiconductor or metal when mechanical strain is applied. In contrast to the piezoelectric effect, the piezoresistive effect causes a change only in electrical resistance, not in electric potential. History The change of electrical resistance in metal devices due to an applied mechanical load was first discovered in 1856 by Lord Kelvin. With single crystal silicon becoming the material of choice for the design of analog and digital circuits, the large piezoresistive effect in silicon and germanium was first discovered in 1954 (Smith 1954). Mechanism In conducting and semi-conducting materials, changes in inter-atomic spacing resulting from strain affect the bandgaps, making it easier (or harder depending on the material and strain) for electrons to be raised into the conduction band. This results in a change in resistivity of the material. Within a certain range of strain this relationship is linear, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Diffused Resistors
Molecular diffusion is the motion of atoms, molecules, or other particles of a gas or liquid at temperatures above absolute zero. The rate of this movement is a function of temperature, viscosity of the fluid, size and density (or their product, mass) of the particles. This type of diffusion explains the net flux of molecules from a region of higher concentration to one of lower concentration. Once the concentrations are equal the molecules continue to move, but since there is no concentration gradient the process of molecular diffusion has ceased and is instead governed by the process of self-diffusion, originating from the random motion of the molecules. The result of diffusion is a gradual mixing of material such that the distribution of molecules is uniform. Since the molecules are still in motion, but an equilibrium has been established, the result of molecular diffusion is called a "dynamic equilibrium". In a phase with uniform temperature, absent external net forces act ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Stress (physics)
In continuum mechanics, stress is a physical quantity that describes Force, forces present during Deformation (physics), deformation. For example, an object being pulled apart, such as a stretched elastic band, is subject to Tension (physics), ''tensile'' stress and may undergo Elongation (materials science), elongation. An object being pushed together, such as a crumpled sponge, is subject to Compression (physics), ''compressive'' stress and may undergo shortening. The greater the force and the smaller the cross-sectional area of the body on which it acts, the greater the stress. Stress has Dimension (physics), dimension of force per area, with SI Units, SI units of newtons per square meter (N/m2) or Pascal (unit), pascal (Pa). Stress expresses the internal forces that neighbouring particles of a continuous material exert on each other, while Strain (mechanics), ''strain'' is the measure of the relative deformation (mechanics), deformation of the material. For example, when a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hall Sensor
In architecture, a hall is a relatively large space enclosed by a roof and walls. In the Iron Age and the Early Middle Ages in northern Europe, a mead hall was where a lord and his retainers ate and also slept. Later in the Middle Ages, the great hall was the largest room in castles and large houses, and where the servants usually slept. As more complex house plans developed, the hall remained a large room for dancing and large feasts, often still with servants sleeping there. It was usually immediately inside the main door. In modern British houses, an entrance hall next to the front door remains an indispensable feature, even if it is essentially merely a corridor. Today, the (entrance) hall of a house is the space next to the front door or vestibule leading to the rooms directly and/or indirectly. Where the hall inside the front door of a house is elongated, it may be called a passage, corridor (from Spanish ''corredor'' used in El Escorial and 100 years later in Castle Ho ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor
A semiconductor is a material with electrical conductivity between that of a conductor and an insulator. Its conductivity can be modified by adding impurities (" doping") to its crystal structure. When two regions with different doping levels are present in the same crystal, they form a semiconductor junction. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called " metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits. Semiconductor devices can display a range of different useful properties, such as passing current more easil ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Acceleration
In mechanics, acceleration is the Rate (mathematics), rate of change of the velocity of an object with respect to time. Acceleration is one of several components of kinematics, the study of motion. Accelerations are Euclidean vector, vector quantities (in that they have Magnitude (mathematics), magnitude and Direction (geometry), direction). The orientation of an object's acceleration is given by the orientation of the ''net'' force acting on that object. The magnitude of an object's acceleration, as described by Newton's second law, is the combined effect of two causes: * the net balance of all external forces acting onto that object — magnitude is Direct proportionality, directly proportional to this net resulting force; * that object's mass, depending on the materials out of which it is made — magnitude is Inverse proportionality, inversely proportional to the object's mass. The International System of Units, SI unit for acceleration is metre per second squared (, \ma ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Pressure Sensors
Pressure measurement is the measurement of an applied force by a fluid (liquid or gas) on a surface. Pressure is typically measured in units of force per unit of surface area. Many techniques have been developed for the measurement of pressure and vacuum. Instruments used to measure and display pressure mechanically are called pressure gauges, vacuum gauges or compound gauges (vacuum & pressure). The widely used Bourdon gauge is a mechanical device, which both measures and indicates and is probably the best known type of gauge. A vacuum gauge is used to measure pressures lower than the ambient atmospheric pressure, which is set as the zero point, in negative values (for instance, −1 bar or −760 mmHg equals total vacuum). Most gauges measure pressure relative to atmospheric pressure as the zero point, so this form of reading is simply referred to as "gauge pressure". However, anything greater than total vacuum is technically a form of pressure. For very low pressu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Paris-Sud University
Paris-Sud University (), also known as the University of Paris — XI (or as the Orsay Faculty of Sciences, University of Paris before 1971), was a French research university distributed among several campuses in the southern suburbs of Paris, including Orsay, Cachan, Châtenay-Malabry, Sceaux, Hauts-de-Seine, Sceaux, and Kremlin-Bicêtre campuses. In 2019, the university was replaced by the Paris-Saclay University. History Paris-Sud, as the Orsay Faculty of Sciences, was originally part of the University of Paris, which was subsequently split into several universities. After World War II, the rapid growth of nuclear physics and chemistry meant that research needed more and more powerful accelerators, which required large areas. The University of Paris, the and the looked for space in the south of Paris near Orsay. Later some of the teaching activity of the Faculty of Sciences in Paris was transferred to Orsay in 1956 at the request of Irène Joliot-Curie and Frédéric Joli ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
