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Silicon On Insulator
In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application. Industry need SOI technology is one of several manufacturing strategies to allow the continued miniaturization of microelectronic devices, colloquially referred to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Silicon Photonics
Silicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI). Silicon photonic devices can be made using existing semiconductor fabrication techniques, and because silicon is already used as the substrate for most integrated circuits, it is possible to create hybrid devices in which the optical and electronic components are integrated onto a single microchip. Consequently, silicon photonics is being actively researched by many electronics manufacturers including IBM and Intel, as well as by academic research groups, as a means for keeping on tr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Metrology
Metrology is the scientific study of measurement. It establishes a common understanding of Unit of measurement, units, crucial in linking human activities. Modern metrology has its roots in the French Revolution's political motivation to standardise units in France when a length standard taken from a natural source was proposed. This led to the creation of the decimal-based metric system in 1795, establishing a set of standards for other types of measurements. Several other countries adopted the metric system between 1795 and 1875; to ensure conformity between the countries, the ''International Bureau of Weights and Measures, Bureau International des Poids et Mesures'' (BIPM) was established by the Metre Convention. This has evolved into the International System of Units (SI) as a result of a resolution at the 11th General Conference on Weights and Measures (CGPM) in 1960. Metrology is divided into three basic overlapping activities: * The definition of units of measurement * ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Wafer Bonding
Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics Microelectronics is a subfield of electronics. As the name suggests, microelectronics relates to the study and manufacture (or microfabrication) of very small electronic designs and components. Usually, but not always, this means micrometre ... and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS and up to 300 mm (12 inch) for the production of microelectronic devices. Smaller wafers were used in the early days of the microelectronics industry, with wafers being just 1 inch in diameter in the 1950s. Overview In microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS), the package protects the sensitive internal structures from environmental infl ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Ion Implantation
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the target's physical, chemical, or electrical properties. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target. Ion implantation also causes chemical and physical changes when the ions impinge on the target at high energy. The crystal structure of the target can be damaged or even destroyed by the energetic collision cascades, and ions of sufficiently high energy (tens of MeV) can cause nuclear transmutation. General principle Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or usin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Smart Cut SOI Wafer Manufacturing Schema
''SMart'' was a British CBBC television programme based on art, which began in 1994 and ended in 2009. The programme was recorded at BBC Television Centre in London. Previously it had been recorded in Studio A at Pebble Mill Studios in Birmingham. The format is similar to the Tony Hart programmes '' Take Hart'' and '' Hartbeat''. The show was revamped into an hour-long show in 2007; from 1994 to 2006 it was previously a 25-minute show. From 1994 to 2005, the show also featured Morph, originally from ''Take Hart''. The series run featured 199 episodes, last airing on 11 August 2011. Production The BBC noticed the success of '' Art Attack'' with Neil Buchanan for CITV which started in 1990 and decided to create their own art show that was accessible to children similar to ''Art Attack''. The original theme tune was composed by Kjartan Poskitt, famous for the '' Murderous Maths'' series of books. From 2003, a different tune was used, written by Steve Brown (known as the fict ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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SIMOX Processing Schematic
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the target's physical, chemical, or electrical properties. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target. Ion implantation also causes chemical and physical changes when the ions impinge on the target at high energy. The crystal structure of the target can be damaged or even destroyed by the energetic collision cascades, and ions of sufficiently high energy (tens of MeV) can cause nuclear transmutation. General principle Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or usin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Floating Body Effect
The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate. The charge accumulates on this capacitor and may cause adverse effects, for example, opening of parasitic transistors in the structure and causing off-state leakages, resulting in higher current consumption and in case of DRAM Dram, DRAM, or drams may refer to: Technology and engineering * Dram (unit), a unit of mass and volume, and an informal name for a small amount of liquor, especially whisky or whiskey * Dynamic random-access memory, a type of electronic semicondu ... in loss of information from the memory cells. It also causes the history effect, the dependence of the threshold voltage of the transistor on its previous states. In analog devices, the floating body effect is known as the ki ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Subthreshold Slope
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour—though being controlled by the gate A gate or gateway is a point of entry to or from a space enclosed by walls. The word is derived from Proto-Germanic language, Proto-Germanic ''*gatan'', meaning an opening or passageway. Synonyms include yett (which comes from the same root w ... terminal—is similar to the exponentially decreasing current of a forward biased diode. Therefore, a plot of drain current versus gate voltage with drain, source, and bulk voltages fixed will exhibit approximately log-linear behaviour in this MOSFET operating regime. Its slope is the subthreshold slope. The subthreshold slope is also the reciprocal value of the subthreshold swing ''Ss-th'' which is usually given as:''Physics of Semiconductor Devices'', S. M. Sze. New York: Wiley, 3rd ed., with Kwok K. Ng, 2007, chapter 6.2.4, p. 315, . ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Bulk MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions, e ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Static Random-access Memory
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The ''static'' qualifier differentiates SRAM from ''dynamic'' random-access memory (DRAM): * SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. * SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost. * Typically, SRAM is used for the cache and internal registers of a CPU while DRAM is used for a computer's main memory. History Semiconductor bipolar SRAM was invented in 1963 by Robert Norman at Fairchild Semiconductor. Metal–oxide–semiconductor SRAM (MOS-SRAM) was invented in 1964 by John Schmidt at Fairchild Semiconductor. The first device was a 64-bit MOS p-channel SRAM. SRAM was the main driver behind any new CMOS-based technology fab ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |