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RibbonFET
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies being developed by MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's law (in its narrow, specific version concerning density scaling, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor DG MOSFET 1
A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electric power, power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminal (electronics), terminals for connection to an electronic circuit. A voltage or Electric current, current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions. Physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transisto ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Infineon Technologies
Infineon Semiconductor solutions is the largest microcontroller manufacturer in the world, as well as Germany's largest semiconductor manufacturer. It is also the leading automotive semiconductor manufacturer globally. Infineon had roughly 58,000 employees in 2024 and is one of the ten largest semiconductor manufacturers worldwide. The company was spun-off from Siemens AG in 1999. In 2024 the company achieved sales of approximately €15 billion. Markets Infineon markets semiconductors and systems for automotive, industrial, and multimarket sectors, as well as chip card and security products. Infineon has subsidiaries in the US in Milpitas, California and in the Asia-Pacific region, in Singapore, and Tokyo. Infineon has a number of facilities in Europe, one in Dresden, Germany. Infineon's high power segment is in Warstein, Germany; Villach, Graz and Linz in Austria; Cegléd in Hungary; and Italy. It also operates R&D centers in France, Singapore, Romania, Taiwan, U ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
High-κ Dielectric
In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law. Sometimes these materials are called "high-k" (pronounced "high kay"), instead of "high-κ" (high kappa). Need for high-κ materials Silicon dioxide () has been used as a gate oxide material for decades. As metal–oxide–semiconductor field-effect transistors (MOSFETs) have decreased in size, the thickness of the silicon dioxide gate dielectric has steadily decreased to increase the gate capacitance (per unit area) and thereby drive current (per ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon On Insulator
In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application. Industry need SOI technology is one of several manufacturing strategies to allow the continued miniaturization of microelectronic devices, colloquially referred to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Strain Engineering
Strain engineering refers to a general strategy employed in semiconductor manufacturing to enhance device performance. Performance benefits are achieved by modulating strain, as one example, in the transistor channel, which enhances electron mobility (or hole mobility) and thereby conductivity through the channel. Another example are semiconductor photocatalysts strain-engineered for more effective use of sunlight. In CMOS manufacturing The use of various strain engineering techniques has been reported by many prominent microprocessor manufacturers, including AMD, IBM, and Intel, primarily with regards to sub-130 nm technologies. One key consideration in using strain engineering in CMOS technologies is that PMOS and NMOS respond differently to different types of strain. Specifically, PMOS performance is best served by applying compressive strain to the channel, whereas NMOS receives benefit from tensile strain. Many approaches to strain engineering induce strain locally, al ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Photolithography
Photolithography (also known as optical lithography) is a process used in the manufacturing of integrated circuits. It involves using light to transfer a pattern onto a substrate, typically a silicon wafer. The process begins with a photosensitive material, called a photoresist, being applied to the substrate. A photomask that contains the desired pattern is then placed over the photoresist. Light is shone through the photomask, exposing the photoresist in certain areas. The exposed areas undergo a chemical change, making them either soluble or insoluble in a developer solution. After development, the pattern is transferred onto the substrate through etching, chemical vapor deposition, or ion implantation processes. Ultraviolet, Ultraviolet (UV) light is typically used. Photolithography processes can be classified according to the type of light used, including ultraviolet lithography, deep ultraviolet lithography, extreme ultraviolet lithography, extreme ultraviolet lithography ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Plane (geometry)
In mathematics, a Euclidean plane is a Euclidean space of dimension two, denoted \textbf^2 or \mathbb^2. It is a geometric space in which two real numbers are required to determine the position of each point. It is an affine space, which includes in particular the concept of parallel lines. It has also metrical properties induced by a distance, which allows to define circles, and angle measurement. A Euclidean plane with a chosen Cartesian coordinate system is called a '' Cartesian plane''. The set \mathbb^2 of the ordered pairs of real numbers (the real coordinate plane), equipped with the dot product, is often called ''the'' Euclidean plane or ''standard Euclidean plane'', since every Euclidean plane is isomorphic to it. History Books I through IV and VI of Euclid's Elements dealt with two-dimensional geometry, developing such notions as similarity of shapes, the Pythagorean theorem (Proposition 47), equality of angles and areas, parallelism, the sum of the angles ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanoelectronics
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. carbon nanotube or silicon nanowires) or advanced molecular electronics. Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm. Recent silicon MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm, 10 nm and 7 nm FinFET (fin field-effect transistor) generations. Nanoelectronics is sometimes considered as disruptive technology because present candidates are significantly d ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
International Technology Roadmap For Semiconductors
The International Technology Roadmap for Semiconductors (ITRS) is a set of documents that was coordinated and organized by Semiconductor Research Corporation and produced by a group of experts in the semiconductor industry. These experts were representative of the sponsoring organisations, including the Semiconductor Industry Associations of Taiwan, South Korea, the United States, Europe, Japan, and China. As of 2017, ITRS is no longer being updated. Its successor is the International Roadmap for Devices and Systems. The documents carried disclaimer: "The ITRS is devised and intended for technology assessment only and is without regard to any commercial considerations pertaining to individual products or equipment". The documents represent best opinion on the directions of research and time-lines up to about 15 years into the future for the following areas of technology: History Constructing an integrated circuit, or any semiconductor device, requires a series of operation ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Freescale Semiconductor
Freescale Semiconductor, Inc. was an American semiconductor manufacturer. It was created by the divestiture of the Semiconductor Products Sector of Motorola in 2004. Freescale focused their integrated circuit products on the automotive, embedded and communications markets. It was bought by a private investor group in 2006, and subsequently merged with NXP Semiconductors in 2015. History Divestiture from Motorola and first IPO As of 2003, Motorola Semiconductor Products Sector earned US$5.0 billion in semiconductor sales in 2002 (out of US$27 billion sales for all of Motorola). Motorola announced that their semiconductor division would be divested on October 6, 2003 and would have a temporary name ''SPS Spinco''. Freescale completed its Initial public offering (IPO) on July 16, 2004, at a price of US$13. In its announcement, it estimated the stock price to be US$17.50- 19.50 but following a cooling of the market towards tech stocks, it lowered its price to US$13. Existing sh ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
