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N-channel
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the Electric current, current through a semiconductor. It comes in two types: JFET, junction FET (JFET) and MOSFET, metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: ''source'', ''gate'', and ''drain''. FETs control the current by the application of a voltage to the gate, which in turn alters the Electrical resistivity and conductivity, conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or hole (semiconductor), holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very High impedance, high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal–oxide–semiconductor field-effe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electric power, power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminal (electronics), terminals for connection to an electronic circuit. A voltage or Electric current, current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions. Physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transisto ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
JFET
The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between ''source'' and ''drain'' terminals. By applying a reverse bias voltage to a ''gate'' terminal, the channel is '' pinched'', so that the electric current is impeded or switched off completely. A JFET is usually conducting when there is zero voltage between its gate and source terminals. If a potential difference of the proper polarity is applied between its gate and source terminals, the JFET will be more resistive to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs are sometimes referred to a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Copper
Copper is a chemical element; it has symbol Cu (from Latin ) and atomic number 29. It is a soft, malleable, and ductile metal with very high thermal and electrical conductivity. A freshly exposed surface of pure copper has a pinkish-orange color. Copper is used as a conductor of heat and electricity, as a building material, and as a constituent of various metal alloys, such as sterling silver used in jewelry, cupronickel used to make marine hardware and coins, and constantan used in strain gauges and thermocouples for temperature measurement. Copper is one of the few metals that can occur in nature in a directly usable, unalloyed metallic form. This means that copper is a native metal. This led to very early human use in several regions, from . Thousands of years later, it was the first metal to be smelted from sulfide ores, ; the first metal to be cast into a shape in a mold, ; and the first metal to be purposely alloyed with another metal, tin, to create bronze, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
William Shockley
William Bradford Shockley ( ; February 13, 1910 – August 12, 1989) was an American solid-state physicist, electrical engineer, and inventor. He was the manager of a research group at Bell Labs that included John Bardeen and Walter Houser Brattain. The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect". Partly as a result of Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s, California's Silicon Valley became a hotbed of electronics innovation. He recruited brilliant employees, but quickly alienated them with his autocratic and erratic management; they left and founded major companies in the industry. In his later life, while a professor of electrical engineering at Stanford University and afterward, Shockley became known as a Racism, racist and Eugenics, eugenicist. Early life and education Shockley was born to American parents in Londo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bell Labs
Nokia Bell Labs, commonly referred to as ''Bell Labs'', is an American industrial research and development company owned by Finnish technology company Nokia. With headquarters located in Murray Hill, New Jersey, Murray Hill, New Jersey, the company operates several laboratories in the United States and around the world. As a former subsidiary of the American Telephone and Telegraph Company (AT&T), Bell Labs and its researchers have been credited with the development of radio astronomy, the transistor, the laser, the photovoltaic cell, the charge-coupled device (CCD), information theory, the Unix operating system, and the programming languages B (programming language), B, C (programming language), C, C++, S (programming language), S, SNOBOL, AWK, AMPL, and others, throughout the 20th century. Eleven Nobel Prizes and five Turing Awards have been awarded for work completed at Bell Laboratories. Bell Labs had its origin in the complex corporate organization of the Bell System telepho ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Surface States
Surface states are electronic states found at the Surface (topology), surface of materials. They are formed due to the sharp transition from solid material that ends with a surface and are found only at the atom layers closest to the surface. The termination of a material with a surface leads to a change of the electronic band structure from the bulk material to the vacuum. In the weakened potential at the surface, new electronic states can be formed, so called surface states. Origin at condensed matter interfaces As stated by Bloch wave, Bloch's theorem, eigenstates of the single-electron Schrödinger equation with a perfectly periodic potential, a crystal, are Bloch waves : \begin \Psi_ &=\mathrm^u_(\boldsymbol). \end Here u_(\boldsymbol) is a function with the same periodicity as the crystal, ''n'' is the band index and k is the wave number. The allowed wave numbers for a given potential are found by applying the usual Born–von Karman cyclic boundary conditions. The term ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dangling Bond
In chemistry, a dangling bond is an unsatisfied Valence (chemistry), valence on an immobilized atom. An atom with a dangling bond is also referred to as an immobilized free radical or an immobilized radical, a reference to its structural and chemical similarity to a free radical. When speaking of a dangling bond, one is generally referring to the state described above, containing one electron and thus leading to a neutrally charged atom. There are also dangling bond defects containing two or no electrons. These are negatively and positively charged respectively. Dangling bonds with two electrons have an energy close to the Valence and conduction bands, valence band of the material and those with none have an energy that is closer to the Valence and conduction bands, conduction band. Properties In order to gain enough electrons to fill their valence shells (see also octet rule), many atoms will form covalent bonds with other atoms. In the simplest case, that of a single bond, tw ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Germanium
Germanium is a chemical element; it has Symbol (chemistry), symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid or a nonmetal in the carbon group that is chemically similar to silicon. Like silicon, germanium naturally Chemical reaction, reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was found comparatively late in the Timeline of chemical element discoveries, discovery of the elements. Germanium ranks 50th Abundance of elements in Earth's crust, in abundance of the elements in the Earth's crust. In 1869, Dmitri Mendeleev Mendeleev's predicted elements, predicted its existence and some of its Chemical property, properties from its position on his periodic table, and called the element ekasilicon. On February 6, 1886, Clemens Winkler at Freiberg University found the new element, along with silver and sulfur, in the mineral argyrodite. Winkle ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
FET Cross Section
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: ''source'', ''gate'', and ''drain''. FETs control the current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal–oxide–semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by the Aust ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Point-contact Transistor
The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and Walter Brattain at Bell Laboratories in December 1947. They worked in a group led by physicist William Shockley. The group had been working together on experiments and theories of electric field effects in solid state materials, with the aim of replacing vacuum tubes with a smaller device that consumed less power. The critical experiment, carried out on December 16, 1947, consisted of a block of germanium, a semiconductor, with two very closely spaced gold contacts held against it by a spring. Brattain attached a small strip of gold foil over the point of a plastic triangle—a configuration which is essentially a point-contact diode. He then carefully sliced through the gold at the tip of the triangle. This produced two electrically isolated gold contacts very close to each other. The piece of germanium used a surface laye ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Walter Houser Brattain
Walter Houser Brattain (; February 10, 1902 – October 13, 1987) was an American solid-state physicist who shared the 1956 Nobel Prize in Physics with John Bardeen and William Shockley for their invention of the point-contact transistor. Brattain devoted much of his life to research on surface states. Biography Walter Brattain was born in Amoy (now Xiamen), Fujian, Qing China, to American parents Ross R. Brattain and Ottilie Houser Brattain. His father was of Scottish descent, while his mother's parents were both immigrants from Stuttgart, Germany. Ross R. Brattain was a teacher at the Ting-Wen Institute, a private school for Chinese boys; Ottilie Houser Brattain was a gifted mathematician. Both were graduates of Whitman College. Ottilie and baby Walter returned to the United States in 1903, and Ross followed shortly afterward. The family lived for several years in Spokane, Washington, then settled on a cattle ranch near Tonasket, Washington in 1911. Brattain attended ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
