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Magnesium Selenide
Magnesium selenide is an inorganic compound with the chemical formula MgSe. It contains magnesium and selenium in a 1:1 ratio. It belongs to the II-VI family of semiconductor compounds. Structure Three crystal structures for MgSe have been experimentally characterized. The rock-salt structure is considered to be the most stable crystal structure that has been observed in bulk samples of MgSe, and a cubic lattice constant of 0.55 nm was deduced for this structure. Although attempts at preparing pure zincblende MgSe have been unsuccessful, the lattice constant of zincblende MgSe has been extrapolated from epitaxial thin films of zincblende MgxZn1−xSySe1−x and MgxZn1−xSe grown on gallium arsenide, the latter of which was prepared with a high magnesium content (up to 95% Mg, i.e., Mg0.95Zn0.05Se). There is good agreement between these and other extrapolations that the lattice constant of pure zincblende MgSe is 0.59 nm. The wurtzite structure of MgSe has been observ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Cubic Crystal System
In crystallography, the cubic (or isometric) crystal system is a crystal system where the unit cell is in the shape of a cube. This is one of the most common and simplest shapes found in crystals and minerals. There are three main varieties of these crystals: *Primitive cubic (abbreviated ''cP'' and alternatively called simple cubic) *Body-centered cubic (abbreviated ''cI'' or bcc) *Face-centered cubic (abbreviated ''cF'' or fcc) Note: the term fcc is often used in synonym for the ''cubic close-packed'' or ccp structure occurring in metals. However, fcc stands for a face-centered cubic Bravais lattice, which is not necessarily close-packed when a motif is set onto the lattice points. E.g. the diamond and the zincblende lattices are fcc but not close-packed. Each is subdivided into other variants listed below. Although the ''unit cells'' in these crystals are conventionally taken to be cubes, the primitive unit cells often are not. Bravais lattices The three Bravais latices ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor
A semiconductor is a material with electrical conductivity between that of a conductor and an insulator. Its conductivity can be modified by adding impurities (" doping") to its crystal structure. When two regions with different doping levels are present in the same crystal, they form a semiconductor junction. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called " metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits. Semiconductor devices can display a range of different useful properties, such as passing current more easil ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnesium Compounds
Magnesium compounds are compounds formed by the element magnesium (Mg). These compounds are important to industry and biology, including magnesium carbonate, magnesium chloride, magnesium citrate, magnesium hydroxide (milk of magnesia), magnesium oxide, magnesium sulfate, and magnesium sulfate heptahydrate (Epsom salts). Inorganic compounds Hydrides, halides and oxo-halides Magnesium hydride was first prepared in 1951 by the reaction between hydrogen and magnesium under high temperature, pressure and magnesium iodide as a catalyst. It reacts with water to release hydrogen gas; it decomposes at 287 °C, 1 bar: : MgH2 → Mg + H2 Magnesium can form compounds with the chemical formula MgX2 (X=F, Cl, Br, I) with halogens. Except for magnesium fluoride, the halides are easily soluble in water, but the solubility of magnesium fluoride is higher than that of other alkaline earth metal fluorides. High-purity magnesium fluoride is produced industrially by the reaction of m ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Molecular Beam Epitaxy
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors. MBE is used to make diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). History The original ideas of the MBE process were first established by K. G. Günther. Films that he deposited were not epitaxial, but were deposited on glass substrates. With the development of vacuum technology, the MBE process was demonstrated by John Davey and Titus Pankey who succeeded in growing GaAs epitaxial films on single crystal GaAs substrates using Günther's method. Major subsequent development of MBE films was enabled by J.R. Arthur's investigations of kinetic behavior of growth mechanisms and Alfred Y. Cho's in situ observation of MBE process using reflection high-energy electron diffraction (RHEED) in the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Cryogenic
In physics, cryogenics is the production and behaviour of materials at very low temperatures. The 13th International Institute of Refrigeration's (IIR) International Congress of Refrigeration (held in Washington, DC in 1971) endorsed a universal definition of "cryogenics" and "cryogenic" by accepting a threshold of to distinguish these terms from conventional refrigeration. This is a logical dividing line, since the normal boiling points of the so-called permanent gases (such as helium, hydrogen, neon, nitrogen, oxygen, and normal air) lie below 120 K, while the Freon refrigerants, hydrocarbons, and other common refrigerants have boiling points above 120 K. Discovery of superconducting materials with critical temperatures significantly above the boiling point of nitrogen has provided new interest in reliable, low-cost methods of producing high-temperature cryogenic refrigeration. The term "high temperature cryogenic" describes temperatures ranging from above the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Vacuum Deposition
Vacuum deposition is a group of processes used to deposit layers of material atom-by-atom or molecule-by-molecule on a solid surface. These processes operate at pressures well below atmospheric pressure (i.e., vacuum). The deposited layers can range from a thickness of one atom up to millimeters, forming freestanding structures. Multiple layers of different materials can be used, for example to form optical coatings. The process can be qualified based on the vapor source; physical vapor deposition uses a liquid or solid source and chemical vapor deposition uses a chemical vapor. Description The vacuum environment may serve one or more purposes: * reducing the particle density so that the mean free path for collision is long * reducing the particle density of undesirable atoms and molecules (contaminants) * providing a low pressure plasma environment * providing a means for controlling gas and vapor composition * providing a means for mass flow control into the processing chambe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronvolt
In physics, an electronvolt (symbol eV), also written electron-volt and electron volt, is the measure of an amount of kinetic energy gained by a single electron accelerating through an Voltage, electric potential difference of one volt in vacuum. When used as a Units of energy, unit of energy, the numerical value of 1 eV in joules (symbol J) is equal to the numerical value of the Electric charge, charge of an electron in coulombs (symbol C). Under the 2019 revision of the SI, this sets 1 eV equal to the exact value Historically, the electronvolt was devised as a standard unit of measure through its usefulness in Particle accelerator#Electrostatic particle accelerators, electrostatic particle accelerator sciences, because a particle with electric charge ''q'' gains an energy after passing through a voltage of ''V''. Definition and use An electronvolt is the amount of energy gained or lost by a single electron when it moves through an Voltage, electric potential differenc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bandgap
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in Electrical insulation, insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron (and the electron hole in the valence band) are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO, HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Iron Monosilicide
Iron monosilicide (FeSi) is an intermetallic compound, a silicide of iron that occurs in nature as the rare mineral naquite. It is a narrow-bandgap semiconductor with a room-temperature electrical resistivity of around 10 kΩ·cm and unusual magnetic properties at low temperatures. FeSi has a cubic crystal lattice with no inversion center; therefore its magnetic structure is helical, with right-hand and left-handed chiralities. The structure is the prototype of the "iron monosilicide structure type", of space group ''P''23 (no. 198). It is similar to the structure of sodium chloride, with four iron atoms and four silicon atoms in each unit cell. Whereas in sodium chloride the eight atoms are at the corners of a cube and each ion is surrounded by six counterions, in iron monosilicide the atoms are all displaced parallel to body diagonals (along threefold axes) from the positions of sodium and chloride. The crystal loses all indirect (chirality reversing) symmetry elements, a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wurtzite (crystal Structure)
In crystallography, the hexagonal crystal family is one of the six crystal families, which includes two crystal systems (hexagonal and trigonal) and two lattice systems (hexagonal and rhombohedral). While commonly confused, the trigonal crystal system and the rhombohedral lattice system are not equivalent (see section crystal systems below). In particular, there are crystals that have trigonal symmetry but belong to the hexagonal lattice (such as α-quartz). The hexagonal crystal family consists of the 12 point groups such that at least one of their space groups has the hexagonal lattice as underlying lattice, and is the union of the hexagonal crystal system and the trigonal crystal system. There are 52 space groups associated with it, which are exactly those whose Bravais lattice is either hexagonal or rhombohedral. __TOC__ Lattice systems The hexagonal crystal family consists of two lattice systems: hexagonal and rhombohedral. Each lattice system consists of one Bravais lat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. History Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. The semiconductor properties of GaAs and other Compound semiconductor, III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 and described in a 1952 publication. Commercial production of its monocrystals commenced in 1954, and more studies followed in the 195 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Epitaxy
Epitaxy (prefix ''epi-'' means "on top of”) is a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
