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Liquid Phase Epitaxy
Epitaxy (prefix ''epi-'' means "on top of”) is a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important ...
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Crystal
A crystal or crystalline solid is a solid material whose constituents (such as atoms, molecules, or ions) are arranged in a highly ordered microscopic structure, forming a crystal lattice that extends in all directions. In addition, macroscopic single crystals are usually identifiable by their geometrical shape, consisting of flat faces with specific, characteristic orientations. The scientific study of crystals and crystal formation is known as crystallography. The process of crystal formation via mechanisms of crystal growth is called crystallization or solidification. The word ''crystal'' derives from the Ancient Greek word (), meaning both "ice" and " rock crystal", from (), "icy cold, frost". Examples of large crystals include snowflakes, diamonds, and table salt. Most inorganic solids are not crystals but polycrystals, i.e. many microscopic crystals fused together into a single solid. Polycrystals include most metals, rocks, ceramics, and ice. A third cat ...
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Microelectronics
Microelectronics is a subfield of electronics. As the name suggests, microelectronics relates to the study and manufacture (or microfabrication) of very small electronic designs and components. Usually, but not always, this means micrometre-scale or smaller. These devices are typically made from semiconductor materials. Many components of a normal electronic design are available in a microelectronic equivalent. These include transistors, capacitors, inductors, resistors, diodes and (naturally) insulators and conductors can all be found in microelectronic devices. Unique wiring techniques such as wire bonding are also often used in microelectronics because of the unusually small size of the components, leads and pads. This technique requires specialized equipment and is expensive. Digital integrated circuits (ICs) consist of billions of transistors, resistors, diodes, and capacitors. Analog circuits commonly contain resistors and capacitors as well. Inductors are u ...
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Hydrogen
Hydrogen is a chemical element; it has chemical symbol, symbol H and atomic number 1. It is the lightest and abundance of the chemical elements, most abundant chemical element in the universe, constituting about 75% of all baryon, normal matter. Under standard conditions, hydrogen is a gas of diatomic molecules with the chemical formula, formula , called dihydrogen, or sometimes hydrogen gas, molecular hydrogen, or simply hydrogen. Dihydrogen is colorless, odorless, non-toxic, and highly combustible. Stars, including the Sun, mainly consist of hydrogen in a plasma state, while on Earth, hydrogen is found as the gas (dihydrogen) and in molecular forms, such as in water and organic compounds. The most common isotope of hydrogen (H) consists of one proton, one electron, and no neutrons. Hydrogen gas was first produced artificially in the 17th century by the reaction of acids with metals. Henry Cavendish, in 1766–1781, identified hydrogen gas as a distinct substance and discovere ...
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Germanium Tetrachloride
Germanium tetrachloride is a colourless, fuming liquid with a peculiar, acidic odour. It is used as an intermediate in the production of purified germanium metal. In recent years, GeCl4 usage has increased substantially due to its use as a reagent for fiber optic production. Production Most commercial production of germanium is from treating flue-dusts of zinc- and copper-ore smelters, although a significant source is also found in the ash from the combustion of certain types of coal called vitrain. Germanium tetrachloride is an intermediate for the purification of germanium metal or its oxide, GeO2."Germanium" Mineral Commodity Profile, U.S. Geological Survey, 2005. Germanium tetrachloride can be generated directly from GeO2 ( germanium dioxide) by dissolution of the oxide in concentrated hydrochloric acid. The resulting mixture is fractionally distilled to purify and separate the germanium tetrachloride from other products and impurities."The Elements" C. R. Hammond, David R. L ...
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Silicon Tetrachloride
Silicon tetrachloride or tetrachlorosilane is the inorganic compound with the formula SiCl4. It is a colorless volatile liquid that fumes in air. It is used to produce high purity silicon and silica for commercial applications. It is a part of the chlorosilane family. Preparation Silicon tetrachloride is prepared by the chlorination of various silicon compounds such as ferrosilicon, silicon carbide, or mixtures of silicon dioxide and carbon. The ferrosilicon route is most common. In the laboratory, can be prepared by treating silicon with chlorine at : : It was first prepared by Jöns Jakob Berzelius in 1823. Brine can be contaminated with silica when the production of chlorine is a byproduct of a metal refining process from metal chloride ore. In rare occurrences, the silicon dioxide in silica is converted to silicon tetrachloride when the contaminated brine is electrolyzed. Reactions Hydrolysis and related reactions Like other chlorosilanes or silanes, silicon tetrachl ...
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Physical Vapor Deposition
Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are Sputter coating, sputtering and Evaporation (deposition), evaporation. PVD is used in the manufacturing of items which require thin films for optical, mechanical, electrical, acoustic or chemical functions. Examples include semiconductor devices such as thin-film solar cells, microelectromechanical devices such as thin film bulk acoustic resonator, aluminized Polyethylene terephthalate, PET film for food packaging and balloons, and titanium nitride coated cutting tools for metalworking. Besides PVD tools for fabrication, special smaller tools used mai ...
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Chemical Vapor Deposition
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (electronics), wafer (substrate) is exposed to one or more Volatility (chemistry), volatile wikt:precursor, precursors, which chemical reaction, react and/or chemical decomposition, decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber. Microfabrication processes widely use CVD to deposit materials in various forms, including: Single crystal, monocrystalline, polycrystalline, amorphous, and Epitaxy, epitaxial. These materials include: silicon (Silicon dioxide, dioxide, silicon carbide, carbide, silicon nitride, nitride, silicon oxynitride, oxynitride), carbon (carbon (fiber), fiber, carbon nanofibers, nanofibers, carbon nanot ...
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CBE Im1
The Most Excellent Order of the British Empire is a British order of chivalry, rewarding valuable service in a wide range of useful activities. It comprises five classes of awards across both civil and military divisions, the most senior two of which make the recipient either a knight if male or a dame if female. There is also the related British Empire Medal, whose recipients are affiliated with the order, but are not members of it. The order was established on 4 June 1917 by King George V, who created the order to recognise 'such persons, male or female, as may have rendered or shall hereafter render important services to Our Empire'. Equal recognition was to be given for services rendered in the UK and overseas. Today, the majority of recipients are UK citizens, though a number of Commonwealth realms outside the UK continue to make appointments to the order. Honorary awards may be made to citizens of other nations of which the order's sovereign is not the head of state. Cur ...
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Stranski–Krastanov Growth
Stranski–Krastanov growth (SK growth, also Stransky–Krastanov or Stranski–Krastanow) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as 'layer-plus-island growth', the SK mode follows a two step process: initially, complete films of adsorbates, up to several monolayers thick, grow in a layer-by-layer fashion on a crystal substrate. Beyond a critical layer thickness, which depends on strain and the chemical potential of the deposited film, growth continues through the nucleation and coalescence of adsorbate 'islands'. This growth mechanism was first noted by Ivan Stranski and Lyubomir Krastanov in 1938. It wasn't until 1958 however, in a seminal work by Ernst Bauer published in ''Zeitschrift für Kristallographie'', that the SK, Volmer–Weber, and Frank–van der Merwe mechanisms were systematically classified as the primary thin-film growth processes. Since then, SK growth has been the subject of inten ...
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Frank–Van Der Merwe Growth
Frank–Van der Merwe growth (FM growth) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. It is also known as 'layer-by-layer growth'. It is considered an ideal growth model, requiring perfect lattice matching between the substrate and the layer growing on to it, and it is usually limited to homoepitaxy. For FM growth to occur, the atoms that are to be deposited should be more attracted to the substrate than to each other, which is in contrast to the layer-plus-island growth model. FM growth is the preferred growth model for producing smooth films. It was first described by South African physicist Jan van der Merwe and British physicist Charles Frank in a series of four papers based on Van der Merwe's PhD research between 1947 and 1949. See also * Epitaxy * Thin films * Molecular-beam epitaxy Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manu ...
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Compound Semiconductor
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows o ...
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