Germanium-tin
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Germanium-tin
Germanium-tin is an alloy of the elements germanium and tin, both located in group 14 of the periodic table. It is only thermodynamically stable under a small composition range. Despite this limitation, it has useful properties for band gap and strain engineering of silicon-integrated optoelectronic and microelectronic semiconductor devices. Synthesis Germanium-tin alloys must be kinetically stabilized in order to prevent decomposition. Therefore, low temperature molecular beam epitaxy or chemical vapor deposition techniques are typically used for their synthesis. Microelectronic applications Germanium-tin alloys have higher carrier mobilities than either silicon or germanium. Therefore, it has been proposed that they can be used as a channel material in high speed metal-oxide-semiconductor field effect transistors. In addition, the alloys' larger lattice constant relative to germanium makes it possible to use them as stressors to enhance the carrier mobility of germanium channel ...
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Germanium
Germanium is a chemical element; it has Symbol (chemistry), symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid or a nonmetal in the carbon group that is chemically similar to silicon. Like silicon, germanium naturally Chemical reaction, reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was found comparatively late in the Timeline of chemical element discoveries, discovery of the elements. Germanium ranks 50th Abundance of elements in Earth's crust, in abundance of the elements in the Earth's crust. In 1869, Dmitri Mendeleev Mendeleev's predicted elements, predicted its existence and some of its Chemical property, properties from its position on his periodic table, and called the element ekasilicon. On February 6, 1886, Clemens Winkler at Freiberg University found the new element, along with silver and sulfur, in the mineral argyrodite. Winkle ...
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Periodic Table
The periodic table, also known as the periodic table of the elements, is an ordered arrangement of the chemical elements into rows (" periods") and columns (" groups"). It is an icon of chemistry and is widely used in physics and other sciences. It is a depiction of the periodic law, which states that when the elements are arranged in order of their atomic numbers an approximate recurrence of their properties is evident. The table is divided into four roughly rectangular areas called blocks. Elements in the same group tend to show similar chemical characteristics. Vertical, horizontal and diagonal trends characterize the periodic table. Metallic character increases going down a group and from right to left across a period. Nonmetallic character increases going from the bottom left of the periodic table to the top right. The first periodic table to become generally accepted was that of the Russian chemist Dmitri Mendeleev in 1869; he formulated the periodic law as ...
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Band Gap
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron (and the electron hole in the valence band) are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there ...
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Optoelectronic
Optoelectronics (or optronics) is the study and application of electronic devices and systems that find, detect and control light, usually considered a sub-field of photonics. In this context, ''light'' often includes invisible forms of radiation such as gamma rays, X-rays, ultraviolet and infrared, in addition to visible light. Optoelectronic devices are electrical-to-optical or optical-to-electrical transducers, or instruments that use such devices in their operation. '' Electro-optics'' is often erroneously used as a synonym, but is a wider branch of physics that concerns all interactions between light and electric fields, regardless of whether they form part of an electronic device. Optoelectronics is based on the quantum mechanical effects of light on electronic materials, especially semiconductors, sometimes in the presence of electric fields. * Photoelectric or photovoltaic effect, used in: ** photodiodes (including solar cells) ** phototransistors ** photomulti ...
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Semiconductor
A semiconductor is a material with electrical conductivity between that of a conductor and an insulator. Its conductivity can be modified by adding impurities (" doping") to its crystal structure. When two regions with different doping levels are present in the same crystal, they form a semiconductor junction. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called " metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits. Semiconductor devices can display a range of different useful properties, such as passing current more easil ...
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Annual Review Of Materials Research
The ''Annual Review of Materials Research'' is a peer-reviewed journal that publishes review articles about materials science. It has been published by the nonprofit Annual Reviews since 1971, when it was first released under the title the ''Annual Review of Materials Science''. Four people have served as editors, with the current editor Ram Seshadri stepping into the position in 2024. It has an impact factor of 10.6 as of 2024. As of 2023, it is being published as open access, under the Subscribe to Open model. History The ''Annual Review of Materials Science'' was first published in 1971 by the nonprofit publisher Annual Reviews, making it their sixteenth journal. Its first editor was Robert Huggins. In 2001, its name was changed to the current form, the ''Annual Review of Materials Research''. The name change was intended "to better reflect the broad appeal that materials research has for so many diverse groups of scientists and not simply those who identify themselves w ...
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Annual Reviews (publisher)
Annual Reviews is an independent, non-profit academic publishing company based in San Mateo, California. As of 2021, it publishes 51 journals of review articles and ''Knowable Magazine'', covering the fields of List of life sciences, life, Biomedical sciences, biomedical, Outline of physical science, physical, and Social science, social sciences. Review articles are usually "peer-invited" solicited submissions, often planned one to two years in advance, which go through a peer-review process. The organizational structure has three levels: a volunteer board of directors, editorial committees of experts for each journal, and paid employees. Annual Reviews' stated Mission statement, mission is to synthesize and integrate knowledge "for the progress of science and the benefit of society". The first Annual Reviews journal, the ''Annual Review of Biochemistry'', was published in 1932 under the editorship of Stanford University chemist J. Murray Luck, who wanted to create a resource ...
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Molecular Beam Epitaxy
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors. MBE is used to make diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). History The original ideas of the MBE process were first established by K. G. Günther. Films that he deposited were not epitaxial, but were deposited on glass substrates. With the development of vacuum technology, the MBE process was demonstrated by John Davey and Titus Pankey who succeeded in growing GaAs epitaxial films on single crystal GaAs substrates using Günther's method. Major subsequent development of MBE films was enabled by J.R. Arthur's investigations of kinetic behavior of growth mechanisms and Alfred Y. Cho's in situ observation of MBE process using reflection high-energy electron diffraction (RHEED) in the ...
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Chemical Vapor Deposition
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (electronics), wafer (substrate) is exposed to one or more Volatility (chemistry), volatile wikt:precursor, precursors, which chemical reaction, react and/or chemical decomposition, decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber. Microfabrication processes widely use CVD to deposit materials in various forms, including: Single crystal, monocrystalline, polycrystalline, amorphous, and Epitaxy, epitaxial. These materials include: silicon (Silicon dioxide, dioxide, silicon carbide, carbide, silicon nitride, nitride, silicon oxynitride, oxynitride), carbon (carbon (fiber), fiber, carbon nanofibers, nanofibers, carbon nanot ...
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Carrier Mobility
In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field ''E'' is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, v_d. Then the electron mobility ''μ'' is defined as v_d = \mu E. Electron mobility is almost always specified in units of cm2/( V⋅ s). This is different from the SI unit of mobility, m2/( V⋅ s). They are related by 1 m2/(V⋅s) = 104 cm2/(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same conductivity could come fro ...
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Silicon
Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid (sometimes considered a non-metal) and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Silicon is a significant element that is essential for several physiological and metabolic processes in plants. Silicon is widely regarded as the predominant semiconductor material due to its versatile applications in various electrical devices such as transistors, solar cells, integrated circuits, and others. These may be due to its significant band gap, expansive optical transmission range, extensive absorption spectrum, surface roughening, and effective anti-reflection coating. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to p ...
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MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ...
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