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Gallium Arsenide Antimonide
Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb ( Ga As(1-''x'') Sb''x''), is a ternary III-V semiconductor compound; ''x'' indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of gallium arsenide (GaAs) and gallium antimonide (GaSb). Preparation GaAsSb films have been grown by molecular beam epitaxy (MBE), metalorganic vapor phase epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indium phosphide substrates. It is often incorporated into layered heterostructures with other III-V compounds. Thermodynamic Stability GaAsSb has a miscibility gap at temperatures below 751 °C. This means that intermediate compositions of the alloy below this temperature are thermodynamically unstable and can spontaneously separate into two phases: one GaAs-rich and one GaSb-rich. This limits the compositions of GaAsSb that can be obtained ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. History Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. The semiconductor properties of GaAs and other Compound semiconductor, III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 and described in a 1952 publication. Commercial production of its monocrystals commenced in 1954, and more studies followed in the 195 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metastability
In chemistry and physics, metastability is an intermediate energetic state within a dynamical system other than the system's state of least energy. A ball resting in a hollow on a slope is a simple example of metastability. If the ball is only slightly pushed, it will settle back into its hollow, but a stronger push may start the ball rolling down the slope. Bowling pins show similar metastability by either merely wobbling for a moment or tipping over completely. A common example of metastability in science is isomerisation. Higher energy isomers are long lived because they are prevented from rearranging to their preferred ground state by (possibly large) barriers in the potential energy. During a metastable state of finite lifetime, all state-describing parameters reach and hold stationary values. In isolation: *the state of least energy is the only one the system will inhabit for an indefinite length of time, until more external energy is added to the system (unique "absolu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Antimonides
Antimonides (sometimes called stibnides or stibinides) are compounds of antimony with more electropositive elements. The antimonide ion is but the term refers also to any anionic derivative of antimony. Antimonides are often prepared by heating the elements. Alternatively, sodium electride in ammonia dissolves antimony to give an antimonide upon evaporation. The reduction of antimony leads to alkali metal antimonides of various types, depending on stoichiometry. Known antimonides include isolated ions (in and ). Other motifs include dumbbells in , discrete antimony chains, for example, in , infinite spirals (in NaSb, RbSb), planar four-membered rings , cages in , and net shaped anions in . Some antimonides are semiconductors, e.g. those of the boron group such as indium antimonide Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow- gap semiconductor material from the III- V group used in infrar ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Multi-junction Solar Cell
Multi-junction (MJ) solar cells are solar cells with multiple p–n junctions made of different semiconductor materials. Each material's p–n junction will produce electric current in response to different wavelengths of light. The use of multiple semiconducting materials allows the absorbance of a broader range of wavelengths, improving the cell's sunlight to electrical energy conversion efficiency. Traditional single-junction cells have a maximum theoretical efficiency of 33.16%. Theoretically, an infinite number of junctions would have a limiting efficiency of 86.8% under highly concentrated sunlight. As of 2024 the best lab examples of traditional crystalline silicon (c-Si) solar cells had efficiencies up to 27.1%, while lab examples of multi-junction cells have demonstrated performance over 46% under concentrated sunlight. Commercial examples of tandem cells are widely available at 30% under one-sun illumination, and improve to around 40% under concentrated sunlight. How ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Photodiode
A photodiode is a semiconductor diode sensitive to photon radiation, such as visible light, infrared or ultraviolet radiation, X-rays and gamma rays. It produces an electrical current when it absorbs photons. This can be used for detection and measurement applications, or for the generation of electrical power in solar cells. Photodiodes are used in a wide range of applications throughout the electromagnetic spectrum from visible light photocells to gamma ray spectrometers. Principle of operation A photodiode is a PIN diode, PIN structure or p–n junction. When a photon of sufficient energy strikes the diode, it creates an electron–electron hole, hole pair. This mechanism is also known as the inner photoelectric effect. If the absorption occurs in the junction's depletion region, or one diffusion length away from it, these carriers are swept from the junction by the built-in electric field of the depletion region. Thus holes move toward the anode, and electrons toward the cath ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Two-dimensional Electron Gas
A two-dimensional electron gas (2DEG) is a scientific model in solid-state physics. It is an Fermi gas, electron gas that is free to move in two dimensions, but tightly confined in the third. This tight confinement leads to quantized energy levels for motion in the third direction, which can then be ignored for most problems. Thus the electrons appear to be a 2D sheet embedded in a 3D world. The analogous construct of electron hole, holes is called a two-dimensional hole gas (2DHG), and such systems have many useful and interesting properties. Realizations Most 2DEGs are found in transistor-like structures made from semiconductors. The most commonly encountered 2DEG is the layer of electrons found in MOSFETs (metal–oxide–semiconductor field-effect transistors). When the transistor is in inversion layer (semiconductors), inversion mode, the electrons underneath the gate oxide are confined to the semiconductor-oxide interface, and thus occupy well defined energy levels. For ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
InGaAs
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics. The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications. Nomenclature Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably. According to IUPAC standards the preferred nomenclature for the alloy is GaxIn1-xAs where the group-III elements appear in order of increasing atomic number, as in the related alloy system AlxGa1-xAs. By far, the most ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heterojunction Bipolar Transistor
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. It is commonly used in modern ultrafast circuits, mostly radio frequency (RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones. The idea of employing a heterojunction is as old as the conventional BJT, dating back to a patent from 1951. Detailed theory of heterojunction bipolar transistor was developed by Herbert Kroemer in 1957. Materials The principal difference between the BJT and HBT is in the use of differing semiconductor materials for the emitter-base junction and the base-collector junction, creating a heterojunction. The effect is to limit the injection of holes from the base into the emitter region, since ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Direct Bandgap
In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the material has an "indirect gap". The band gap is called "direct" if the crystal momentum of electrons and holes is the same in both the conduction band and the valence band; an electron can directly emit a photon. In an "indirect" gap, a photon cannot be emitted because the electron must pass through an intermediate state and transfer momentum to the crystal lattice. Examples of direct bandgap materials include hydrogenated amorphous silicon and some III–V materials such as InAs and GaAs. Indirect bandgap materials include crystalline silicon and Ge. Some III–V materials are indirect bandgap as well, for example AlSb. Implications f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronvolt
In physics, an electronvolt (symbol eV), also written electron-volt and electron volt, is the measure of an amount of kinetic energy gained by a single electron accelerating through an Voltage, electric potential difference of one volt in vacuum. When used as a Units of energy, unit of energy, the numerical value of 1 eV in joules (symbol J) is equal to the numerical value of the Electric charge, charge of an electron in coulombs (symbol C). Under the 2019 revision of the SI, this sets 1 eV equal to the exact value Historically, the electronvolt was devised as a standard unit of measure through its usefulness in Particle accelerator#Electrostatic particle accelerators, electrostatic particle accelerator sciences, because a particle with electric charge ''q'' gains an energy after passing through a voltage of ''V''. Definition and use An electronvolt is the amount of energy gained or lost by a single electron when it moves through an Voltage, electric potential differenc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bandgap
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in Electrical insulation, insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron (and the electron hole in the valence band) are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO, HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
