A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred

GHz The hertz (symbol: Hz) is the unit of frequency in the International System of Units (SI), often described as being equivalent to one event (or Cycle per second, cycle) per second. The hertz is an SI derived unit whose formal expression in ter ...

. It is commonly used in modern ultrafast circuits, mostly

radio frequency Radio frequency (RF) is the oscillation rate of an alternating electric current or voltage or of a magnetic, electric or electromagnetic field or mechanical system in the frequency range from around to around . This is roughly between the u ...

(RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones. The idea of employing a heterojunction is as old as the conventional BJT, dating back to a patent from 1951. Detailed theory of heterojunction bipolar transistor was developed by Herbert Kroemer in 1957.

Materials

The principal difference between the BJT and HBT is in the use of differing semiconductor materials for the emitter-base junction and the base-collector junction, creating a heterojunction. The effect is to limit the injection of holes from the base into the emitter region, since the potential barrier in the valence band is higher than in the conduction band. Unlike BJT technology, this allows a high doping density to be used in the base, reducing the base resistance while maintaining gain. The efficiency of the heterojunction is measured by the Kroemer factor. Kroemer was awarded a

Nobel Prize The Nobel Prizes ( ; ; ) are awards administered by the Nobel Foundation and granted in accordance with the principle of "for the greatest benefit to humankind". The prizes were first awarded in 1901, marking the fifth anniversary of Alfred N ...

in 2000 for his work in this field at the University of California, Santa Barbara. Materials used for the substrate include silicon, gallium arsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminum gallium arsenide / gallium arsenide, and indium phosphide / indium gallium arsenide are used for the epitaxial layers. Wide- bandgap semiconductors such as gallium nitride and indium gallium nitride are especially promising. In SiGe graded heterostructure transistors, the amount of germanium in the base is graded, making the bandgap narrower at the collector than at the emitter. That tapering of the bandgap leads to a field-assisted transport in the base, which speeds transport through the base and increases frequency response.

Fabrication

Due to the need to manufacture HBT devices with extremely high-doped thin base layers, molecular beam epitaxy is principally employed. In addition to base, emitter and collector layers, highly doped layers are deposited on either side of collector and emitter to facilitate an ohmic contact, which are placed on the contact layers after exposure by

photolithography Photolithography (also known as optical lithography) is a process used in the manufacturing of integrated circuits. It involves using light to transfer a pattern onto a substrate, typically a silicon wafer. The process begins with a photosensiti ...

and etching. The contact layer underneath the collector, named subcollector, is an active part of the transistor. Other techniques are used depending on the material system. IBM and others use ultra-high vacuum chemical vapor deposition (UHVCVD) for SiGe; other techniques used include MOVPE for III-V systems. Normally the epitaxial layers are lattice matched (which restricts the choice of bandgap etc.). If they are near-lattice-matched the device is pseudomorphic, and if the layers are unmatched (often separated by a thin buffer layer) it is metamorphic.

Limits

A pseudomorphic heterojunction bipolar transistor developed at the University of Illinois at Urbana-Champaign, built from indium phosphide and indium gallium arsenide and designed with compositionally graded collector, base and emitter, was demonstrated to cut off at a speed of 710 GHz.Indium Phosphide: Transcending frequency and integration limits. Semiconductor Today. Vol 1 Issue 3. Sept 2006
/ref> Besides being record breakers in terms of speed, HBTs made of InP/ InGaAs are ideal for monolithic optoelectronic integrated circuits. A PIN-type photo detector is formed by the base-collector-subcollector layers. The bandgap of InGaAs works well for detecting 1550 nm-

wavelength In physics and mathematics, wavelength or spatial period of a wave or periodic function is the distance over which the wave's shape repeats. In other words, it is the distance between consecutive corresponding points of the same ''phase (waves ...

infrared laser signals used in optical communication systems. Biasing the HBT to obtain an active device, a photo transistor with high internal gain is obtained. Among other HBT applications are mixed signal circuits such as analog-to-digital and digital-to-analog converters.

References

External links

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HBT Optoelectronic Circuits developed in the Technion
(15Mb, 230p)

604 GHz Early 2005 {{DEFAULTSORT:Heterojunction Bipolar Transistor Microwave technology Terahertz technology Transistor types

Materials

Fabrication

Limits

See also

References

External links