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Gallium Sulfide
Gallium sulfide may refer to: * Gallium(III) sulfide, Ga2S3 * Gallium(II) sulfide Gallium(II) sulfide, GaS, is a chemical compound of gallium and sulfur. The normal form of gallium(II) sulfide as made from the elements has a hexagonal layer structure containing Ga24+ units which have a Ga-Ga distance of 248pm. This layer struct ..., GaS * Thiogallate cations containing gallium and sulfur {{Short pages monitor ...
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Gallium(III) Sulfide
Gallium(III) sulfide, Ga2S3, is a compound of sulfur and gallium, that is a semiconductor that has applications in electronics and photonics. Structure There are four polymorphs, α (hexagonal), α' (monoclinic), β(hexagonal) and γ(cubic). The alpha form is yellow. The crystal structures are related to those of ZnS with gallium in tetrahedral positions.The Chemistry of Aluminium, Gallium, Indium and Thallium, Anthony John Downs, 1993, , The alpha and beta forms are isostructural with their aluminium analogues. The similarity in crystal form of gamma- with sphalerite (zinc blende), ZnS is believed to explain the enrichment of gallium in sphalerite ores. Preparation and chemical properties Ga2S3 can prepared by reacting the elements at high temperature or as a white solid by heating Ga in a stream of H2S at high temperature (950 °C). It may also prepared by a solid state reaction of GaCl3 and Na2S. The method of production can determine the polymorphic form pro ...
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Gallium(II) Sulfide
Gallium(II) sulfide, GaS, is a chemical compound of gallium and sulfur. The normal form of gallium(II) sulfide as made from the elements has a hexagonal layer structure containing Ga24+ units which have a Ga-Ga distance of 248pm. This layer structure is similar to GaTe, GaSe and InSe. An unusual metastable form, with a distorted wurtzite structure In crystallography, the hexagonal crystal family is one of the six crystal families, which includes two crystal systems (hexagonal and trigonal) and two lattice systems (hexagonal and rhombohedral). While commonly confused, the trigonal crystal ... has been reported as being produced using MOCVD. The metal organic precursors were di-tert-butyl gallium dithiocarbamates, for example GatBu2(S2CNMe2) and this was deposited onto GaAs. The structure of the GaS produced in this way is presumably Ga2+ S2−. Single layers of gallium sulfide are dynamically stable two-dimensional semiconductors, in which the valence band has an inverted ...
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