Ferdinand-Braun-Institut Für Höchstfrequenztechnik
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Ferdinand-Braun-Institut Für Höchstfrequenztechnik
The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) is a research institute, which is a member of the Gottfried Wilhelm Leibniz Scientific Community. The institute is located in Berlin at the WISTA, Wissenschafts- und Wirtschaftsstandort Berlin-Adlershof, Adlershof (WISTA), its research activity is applied science in the fields of III-V electronics, photonics, integrated quantum technology and III-V technology History The institute arose from the former „Zentralinstitut für Optik und Spektroskopie“ and parts of "Zentralinstitut für Elektronenphysik" der Akademie der Wissenschaften der DDR. Based on a recommendation of the Wissenschaftsrat, it was reestablished on January 1, 1992. The institute is named after Ferdinand Braun (1850–1918), who received the Nobel Prize for physics in 1909 for his contributions on the development of wireless telegraphy. Research The Ferdinand-Braun-Institute conducts research based on III-V semiconductor techno ...
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Laser
A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word ''laser'' originated as an acronym for light amplification by stimulated emission of radiation. The first laser was built in 1960 by Theodore Maiman at Hughes Research Laboratories, based on theoretical work by Charles H. Townes and Arthur Leonard Schawlow and the optical amplifier patented by Gordon Gould. A laser differs from other sources of light in that it emits light that is coherence (physics), ''coherent''. Spatial coherence allows a laser to be focused to a tight spot, enabling uses such as optical communication, laser cutting, and Photolithography#Light sources, lithography. It also allows a laser beam to stay narrow over great distances (collimated light, collimation), used in laser pointers, lidar, and free-space optical communication. Lasers can also have high temporal coherence, which permits them to emit light ...
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Heterojunction Bipolar Transistor
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. It is commonly used in modern ultrafast circuits, mostly radio frequency (RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones. The idea of employing a heterojunction is as old as the conventional BJT, dating back to a patent from 1951. Detailed theory of heterojunction bipolar transistor was developed by Herbert Kroemer in 1957. Materials The principal difference between the BJT and HBT is in the use of differing semiconductor materials for the emitter-base junction and the base-collector junction, creating a heterojunction. The effect is to limit the injection of holes from the base into the emitter region, since ...
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Laser Diode
file:Laser diode chip.jpg, The laser diode chip removed and placed on the eye of a needle for scale A laser diode (LD, also injection laser diode or ILD or semiconductor laser or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create active laser medium, lasing conditions at the diode's p–n junction, junction. Driven by voltage, the doped p–n-transition allows for carrier generation and recombination, recombination of an electron with a electron hole, hole. Due to the drop of the electron from a higher energy level to a lower one, radiation is generated in the form of an emitted photon. This is spontaneous emission. Stimulated emission can be produced when the process is continued and further generates light with the same phase, coherence, and wavelength. The choice of the semiconductor material determines the wavelength of the emitted beam, which in today's laser diodes range from the inf ...
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Humboldt University Of Berlin
The Humboldt University of Berlin (, abbreviated HU Berlin) is a public research university in the central borough of Mitte in Berlin, Germany. The university was established by Frederick William III on the initiative of Wilhelm von Humboldt, Johann Gottlieb Fichte and Friedrich Daniel Ernst Schleiermacher as the University of Berlin () in 1809, and opened in 1810. From 1828 until its closure in 1945, it was named the (Royal) Friedrich Wilhelm University of Berlin (FWU Berlin; ). During the Cold War, the university found itself in East Berlin and was ''de facto'' split in two when the Free University of Berlin opened in West Berlin. The university received its current name in honour of Alexander and Wilhelm von Humboldt in 1949. The university is divided into nine faculties including its medical school shared with the Freie Universität Berlin. The university has a student enrollment of around 35,000 students, and offers degree programs in some 171 disciplines from un ...
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Technische Universität Berlin
(TU Berlin; also known as Berlin Institute of Technology and Technical University of Berlin, although officially the name should not be translated) is a public university, public research university located in Berlin, Germany. It was the first German university to adopt the name "Technische Universität" (university of technology). The university alumni and staff includes several United States National Academies, US National Academies members, two National Medal of Science laureates, the creator of the first fully functional programmable (electromechanical) computer, Konrad Zuse, and ten Nobel Prize laureates. TU Berlin is a member of TU9, an incorporated society of the largest and most notable German institutes of technology and of the Top International Managers in Engineering network, which allows for student exchanges between leading engineering schools. It belongs to the Conference of European Schools for Advanced Engineering Education and Research. The TU Berlin is home of ...
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HVPE
Hydride vapour-phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides. Carrier gasses commonly used include ammonia, hydrogen and various chlorides. HVPE technology can significantly reduce the cost of production compared to the most common method of vapor deposition of organometallic compounds (MOCVD Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. ...). Cost reduction is achieved by significantly reducing the consumption of NH3, cheaper source materials than in MOCVD, reducing the capital equipment costs, due ...
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Metalorganic Vapor Phase Epitaxy
Metal-organic compounds (jargon: metalorganics, metallo-organics) are a class of chemical compounds that contain metals and organic ligands, but lacking direct metal-carbon bonds. Metal β-diketonates, metal alkoxides, metal dialkylamides, transition metal carboxylate complexes, metal acetylacetonates, and metal phosphine complexes are representative members of this class. Some of metal-organic compounds confer solubility in organic solvents or volatility. Compounds with these properties find applications in materials science for metal organic vapor deposition (MOCVD) or sol-gel processing. Precise definitions of metal-organic compound may vary, however the term may describe: *Organometallic chemistry * Metal coordination complex A coordination complex is a chemical compound consisting of a central atom or ion, which is usually metallic and is called the ''coordination centre'', and a surrounding array of chemical bond, bound molecules or ions, that are in turn known as ' .. ...
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Clean Room
A cleanroom or clean room is an engineered space that maintains a very low concentration of airborne particulates. It is well-isolated, well-controlled from contamination, and actively cleansed. Such rooms are commonly needed for scientific research and in industrial production for all nanoscale processes, such as semiconductor device fabrication, semiconductor device manufacturing. A cleanroom is designed to keep everything from dust to airborne organisms or vaporised particles away from it, and so from whatever material is being handled inside it. A cleanroom can also prevent the escape of materials. This is often the primary aim in hazardous biological engineering, biology, nuclear engineering, nuclear work, pharmaceutical industry, pharmaceutics, and virology. Cleanrooms typically come with a cleanliness level quantified by the number of particles per cubic meter at a predetermined molecule measure. The ambient outdoor air in a typical urban area contains 35,000,000 pa ...
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Hydride Vapour Phase Epitaxy
Hydride vapour-phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides. Carrier gasses commonly used include ammonia, hydrogen Hydrogen is a chemical element; it has chemical symbol, symbol H and atomic number 1. It is the lightest and abundance of the chemical elements, most abundant chemical element in the universe, constituting about 75% of all baryon, normal matter ... and various chlorides. HVPE technology can significantly reduce the cost of production compared to the most common method of vapor deposition of organometallic compounds ( MOCVD). Cost reduction is achieved by significantly reducing the consumption of NH3, cheaper source materials than in MOCVD, reducing the capital equipment costs ...
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Metalorganic Vapour-phase Epitaxy
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760  Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as light-emitting diodes, its most widespread application. It was first demonstrated in 1967 at North American Aviation (later Rockwell International) Autonetics Division in Anaheim CA by Harold M. Manasevit. Basic pr ...
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Epitaxy
Epitaxy (prefix ''epi-'' means "on top of”) is a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important ...
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