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Boron Arsenide
Boron arsenide (or Arsenic boride) is a chemical compound involving boron and arsenic, usually with a chemical formula BAs. Other boron arsenide compounds are known, such as the subarsenide . Chemical synthesis of cubic BAs is very challenging and its single crystal forms usually have defects. Properties BAs is a cubic (sphalerite) semiconductor in the III-V family with a lattice constant of 0.4777 nm and an indirect band gap of 1.82 eV. Cubic BAs is reported to decompose to the subarsenide B12As2 at temperatures above 920 °C. Boron arsenide has a melting point of 2076 °C. The thermal conductivity of BAs is exceptionally high, recently measured in single-crystal BAs to be around 1300 W/(m·K) at room temperature, making it the highest among all metals and semiconductors. The basic physical properties of cubic BAs have been experimentally measured: Band gap (1.82 eV), optical refractive index (3.29 at wavelength 657 nm), elastic modulus (326 GPa), shear modu ...
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Sphalerite
Sphalerite is a sulfide mineral with the chemical formula . It is the most important ore of zinc. Sphalerite is found in a variety of deposit types, but it is primarily in Sedimentary exhalative deposits, sedimentary exhalative, Carbonate-hosted lead-zinc ore deposits, Mississippi-Valley type, and Volcanogenic massive sulfide ore deposit, volcanogenic massive sulfide deposits. It is found in association with galena, chalcopyrite, pyrite (and other sulfide mineral, sulfides), calcite, dolomite (mineral), dolomite, quartz, rhodochrosite, and fluorite. German geologist Ernst Friedrich Glocker discovered sphalerite in 1847, naming it based on the Greek word ''sphaleros'', meaning "deceiving", due to the difficulty of identifying the mineral. In addition to zinc, sphalerite is an ore of cadmium, gallium, germanium, and indium. Miners have been known to refer to sphalerite as ''zinc blende'', ''black-jack'', and ''ruby blende''. Marmatite is an opaque black variety with a high iron ...
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Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. History Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. The semiconductor properties of GaAs and other Compound semiconductor, III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 and described in a 1952 publication. Commercial production of its monocrystals commenced in 1954, and more studies followed in the 195 ...
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Silicon
Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid (sometimes considered a non-metal) and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Silicon is a significant element that is essential for several physiological and metabolic processes in plants. Silicon is widely regarded as the predominant semiconductor material due to its versatile applications in various electrical devices such as transistors, solar cells, integrated circuits, and others. These may be due to its significant band gap, expansive optical transmission range, extensive absorption spectrum, surface roughening, and effective anti-reflection coating. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to p ...
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Thermal Conductivity
The thermal conductivity of a material is a measure of its ability to heat conduction, conduct heat. It is commonly denoted by k, \lambda, or \kappa and is measured in W·m−1·K−1. Heat transfer occurs at a lower rate in materials of low thermal conductivity than in materials of high thermal conductivity. For instance, metals typically have high thermal conductivity and are very efficient at conducting heat, while the opposite is true for insulating materials such as mineral wool or Styrofoam. Metals have this high thermal conductivity due to free electrons facilitating heat transfer. Correspondingly, materials of high thermal conductivity are widely used in heat sink applications, and materials of low thermal conductivity are used as thermal insulation. The reciprocal of thermal conductivity is called thermal resistivity. The defining equation for thermal conductivity is \mathbf = - k \nabla T, where \mathbf is the heat flux, k is the thermal conductivity, and \nabla ...
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High-electron-mobility Transistor
A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is Gallium arsenide, GaAs with Aluminium gallium arsenide, AlGaAs, though there is wide variation, dependent on the application of the device. Devices incorporating more indium generally show better high-frequency performance, while in recent years, gallium nitride HEMTs have attracted attention due to their high-power performance. Like other FETs, HEMTs can be used in integrated circuits as digital on-off switches. FETs can also be used as amplifiers for large amounts of current using a small voltage as a control signal. Both of these uses are made possible by the FET’s unique current–voltage characteristic ...
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Gallium Nitride
Gallium nitride () is a binary III/ V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4  eV affords it special properties for applications in optoelectronics, high-power and high-frequency devices. For example, GaN is the substrate that makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in high-radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising c ...
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Solar Cell
A solar cell, also known as a photovoltaic cell (PV cell), is an electronic device that converts the energy of light directly into electricity by means of the photovoltaic effect.Solar Cells
chemistryexplained.com
It is a type of photoelectric cell, a device whose electrical characteristics (such as Electric current, current, voltage, or Electrical resistance and conductance, resistance) vary when it is exposed to light. Individual solar cell devices are often the electrical building blocks of solar panel, photovoltaic modules, known colloquially as "solar panels". Almost all commercial PV cells consist of crystalline silicon, with a market share of 95%. Cadmium telluride thin-film solar cells account for the remainder. The common single-junction silicon solar cell can produce a maximum open-circuit voltage o ...
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Silicon Carbide
Silicon carbide (SiC), also known as carborundum (), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder and crystal since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and Cat's whisker detector, detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Natural occurrence Naturally occurring moissanite is found ...
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Substrate (chemistry)
In chemistry, the term substrate is highly context-dependent. Broadly speaking, it can refer either to a chemical species being observed in a chemical reaction, or to a surface on which other chemical reactions or microscopy are performed. In the former sense, a reagent is added to the ''substrate'' to generate a product through a chemical reaction. The term is used in a similar sense in synthetic and organic chemistry, where the substrate is the chemical of interest that is being modified. In biochemistry, an enzyme substrate is the material upon which an enzyme acts. When referring to Le Chatelier's principle, the substrate is the reagent whose concentration is changed. ;Spontaneous reaction : :*Where S is substrate and P is product. ;Catalysed reaction : :*Where S is substrate, P is product and C is catalyst. In the latter sense, it may refer to a surface on which other chemical reactions are performed or play a supporting role in a variety of spectroscopic and micr ...
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Rhombohedron
In geometry, a rhombohedron (also called a rhombic hexahedron or, inaccurately, a rhomboid) is a special case of a parallelepiped in which all six faces are congruent rhombi. It can be used to define the rhombohedral lattice system, a honeycomb with rhombohedral cells. A rhombohedron has two opposite apices at which all face angles are equal; a prolate rhombohedron has this common angle acute, and an oblate rhombohedron has an obtuse angle at these vertices. A cube is a special case of a rhombohedron with all sides square. Special cases The common angle at the two apices is here given as \theta. There are two general forms of the rhombohedron: oblate (flattened) and prolate (stretched). In the oblate case \theta > 90^\circ and in the prolate case \theta < 90^\circ. For \theta = 90^\circ the figure is a cube. Certain proportions of the rhombs give rise to some well-known special cases. These typically occur in both prolate and oblate forms.


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Space Group
In mathematics, physics and chemistry, a space group is the symmetry group of a repeating pattern in space, usually in three dimensions. The elements of a space group (its symmetry operations) are the rigid transformations of the pattern that leave it unchanged. In three dimensions, space groups are classified into 219 distinct types, or 230 types if chiral copies are considered distinct. Space groups are discrete cocompact groups of isometries of an oriented Euclidean space in any number of dimensions. In dimensions other than 3, they are sometimes called Bieberbach groups. In crystallography, space groups are also called the crystallographic or Fedorov groups, and represent a description of the symmetry of the crystal. A definitive source regarding 3-dimensional space groups is the ''International Tables for Crystallography'' . History Space groups in 2 dimensions are the 17 wallpaper groups which have been known for several centuries, though the proof that the list ...
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Icosahedron
In geometry, an icosahedron ( or ) is a polyhedron with 20 faces. The name comes . The plural can be either "icosahedra" () or "icosahedrons". There are infinitely many non- similar shapes of icosahedra, some of them being more symmetrical than others. The best known is the ( convex, non- stellated) regular icosahedron—one of the Platonic solids—whose faces are 20 equilateral triangles. Regular icosahedra There are two objects, one convex and one nonconvex, that can both be called regular icosahedra. Each has 30 edges and 20 equilateral triangle faces with five meeting at each of its twelve vertices. Both have icosahedral symmetry. The term "regular icosahedron" generally refers to the convex variety, while the nonconvex form is called a ''great icosahedron''. Convex regular icosahedron The convex regular icosahedron is usually referred to simply as the ''regular icosahedron'', one of the five regular Platonic solids, and is represented by its Schläfli symbol , contai ...
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