|
32 Nm
The "32 nm" node is the step following the "45 nm" process in CMOS (MOSFET) semiconductor device fabrication. "32-nanometre" refers to the average half-pitch (i.e., half the distance between identical features) of a memory cell at this technology level. Toshiba produced commercial 32 GiB NAND flash memory chips with the "32nm" process in 2009. Intel and AMD produced commercial microchips using the "32 nm" process in the early 2010s. IBM and the Common Platform also developed a "32 nm" high-κ metal gate process. Intel began selling its first "32 nm" processors using the Westmere architecture on 7 January 2010. Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, nor metal pitch, nor gate pitch on a "32nm" device is thirty-two nanometers. The "28 nm" node is an intermediate half-node die shrink based on the "32 nm" process. The "32 nm" process ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
45 Nm Process
Per the International Technology Roadmap for Semiconductors, the 45 nm process is a MOSFET technology node referring to the average half-pitch of a memory cell manufactured at around the 2007–2008 time frame. Matsushita and Intel started mass-producing 45 nm chips in late 2007, and AMD started production of 45 nm chips in late 2008, while IBM, Infineon, Samsung, and Chartered Semiconductor have already completed a common 45 nm process platform. At the end of 2008, SMIC was the first China-based semiconductor company to move to 45 nm, having licensed the bulk 45 nm process from IBM. In 2008, TSMC moved on to a 40nm process. Many critical feature sizes are smaller than the wavelength of light used for lithography (i.e., 193 nm and 248 nm). A variety of techniques, such as larger lenses, are used to make sub-wavelength features. Double patterning has also been introduced to assist in shrinking distances between features, especially if dry lit ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
22 Nm Process
The "22 nm" node is the process step following 32 nm in CMOS MOSFET semiconductor device fabrication. It was first demonstrated by semiconductor companies for use in RAM in 2008. In 2010, Toshiba began shipping 24 nm flash memory chips, and Samsung Electronics began mass-producing 20 nm flash memory chips. The first consumer-level CPU deliveries using a 22 nm process started in April 2012 with the Intel Ivy Bridge processors. Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a "22nm" device is twenty-two nanometers. The ITRS 2006 Front End Process Update indicates that equivalent physical oxide thickness will not scale below 0.5 nm (about twice the diameter of a silicon atom), which is the expected value at the 22 nm node. This is an indication that CMOS scaling in this area has reached a wall at this p ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gulftown (microprocessor)
Gulftown or Westmere-E is the codename of an up to six-core Hyper-threading, hyperthreaded Intel processor able to run up to 12 threads in parallel. It is based on Westmere (microarchitecture), Westmere microarchitecture, the 32 nanometer, 32 nm shrink of Nehalem (microarchitecture), Nehalem. Originally rumored to be called the Intel Core i9, it is sold as an Intel Core i7. The first release was the Core i7 980X in the first quarter of 2010, along with its server counterpart, the Xeon 3600 and the dual-socket Xeon 5600 (Westmere-EP) series using identical chips. Processor First figures indicate that at equivalent clock rates, depending on the software, it has up to 50% higher performance than the identically clocked quad-core Bloomfield (microprocessor), Bloomfield Core i7-975. Despite having 50% more transistors, the CPU strongly benefits from the 32-nm process, drawing the same or even less power (depending on the operating system) than its Bloomfield predecessors with merely fo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Sandy Bridge
Sandy Bridge is the List of Intel codenames, codename for Intel's 32 nm process, 32 nm microarchitecture used in the second generation of the Intel Core, Intel Core processors (Intel Core i7, Core i7, Intel Core i5, i5, Intel Core i3, i3). The Sandy Bridge microarchitecture is the successor to Nehalem (microarchitecture), Nehalem and Westmere (microarchitecture), Westmere microarchitecture. Intel demonstrated an A1 stepping Sandy Bridge processor in 2009 during Intel Developer Forum (IDF), and released first products based on the architecture in January 2011 under the Intel Core#Sandy Bridge microarchitecture based, Core brand. Sandy Bridge is manufactured in the 32 nanometer, 32 nm process and has a soldered contact with the die and IHS (Integrated Heat Spreader), while Intel's subsequent generation Ivy Bridge (microarchitecture), Ivy Bridge uses a 22 nanometer, 22 nm die shrink and a TIM (Thermal Interface Material) between the die and the IHS. Technology Intel demonstrated a S ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DDR3
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high Bandwidth (computing), bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR SDRAM, DDR and DDR2 SDRAM, DDR2 and predecessor to DDR4 SDRAM, DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither Forward compatibility, forward nor Backward compatibility, backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance. The primary benefit of DDR3 SDRAM over its immediate predecessor DDR2 SDRAM, is its ability to transfer data at twice the rate (eight times the speed of its internal memory arrays), enabling higher bandwidth or peak data ra ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
SDRAM
Synchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to the early 1990s used an ''asynchronous'' interface, in which input control signals have a direct effect on internal functions delayed only by the trip across its semiconductor pathways. SDRAM has a ''synchronous'' interface, whereby changes on control inputs are recognised after a rising edge of its clock input. In SDRAM families standardized by JEDEC, the clock signal controls the stepping of an internal finite-state machine that responds to incoming commands. These commands can be pipelined to improve performance, with previously started operations completing while new commands are received. The memory is divided into several equally sized but independent sections called ''banks'', allowing the device to operate on a memor ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DDR4
Double Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth ("double data rate") interface. Released to the market in 2014, it is a variant of dynamic random-access memory (DRAM), some of which have been in use since the early 1970s, and a higher-speed successor to the DDR2 and DDR3 technologies. DDR4 is not compatible with any earlier type of random-access memory (RAM) due to different signaling voltage and physical interface, besides other factors. DDR4 SDRAM was released to the public market in Q2 2014, focusing on ECC memory, while the non-ECC DDR4 modules became available in Q3 2014, accompanying the launch of Haswell-E processors that require DDR4 memory. Features The primary advantages of DDR4 over its predecessor, DDR3, include higher module density and lower voltage requirements, coupled with higher data rate transfer speeds. The DDR4 standard allows for DIMMs of up t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
TSMC
Taiwan Semiconductor Manufacturing Company Limited (TSMC or Taiwan Semiconductor) is a Taiwanese multinational semiconductor contract manufacturing and design company. It is one of the world's most valuable semiconductor companies, the world's largest Foundry model#Dedicated foundry, dedicated independent ("Pure play, pure-play") Foundry (electronics), semiconductor foundry, and Taiwan's largest company, with headquarters and main operations located in the Hsinchu Science Park in Hsinchu, Taiwan. Although the government of Taiwan is the largest individual shareholder, the majority of TSMC is owned by foreign investors. In 2023, the company was ranked 44th in the Forbes Global 2000, ''Forbes'' Global 2000. Taiwan's exports of integrated circuits amounted to $184 billion in 2022, nearly 25 percent of Taiwan's GDP. TSMC constitutes about 30 percent of the Taiwan Stock Exchange's main index. TSMC was founded in 1987 by Morris Chang as the world's first dedicated semiconductor foun ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Numerical Aperture
In optics, the numerical aperture (NA) of an optical system is a dimensionless number that characterizes the range of angles over which the system can accept or emit light. By incorporating index of refraction in its definition, has the property that it is constant for a beam as it goes from one material to another, provided there is no refractive power at the interface (e.g., a flat interface). The exact definition of the term varies slightly between different areas of optics. Numerical aperture is commonly used in microscopy to describe the acceptance cone of an Objective (optics), objective (and hence its light-gathering ability and Optical resolution, resolution), and in fiber optics, in which it describes the range of angles within which light that is incident on the fiber will be transmitted along it. General optics In most areas of optics, and especially in microscopy, the numerical aperture of an optical system such as an objective lens is defined by \mathrm = n \sin \t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Immersion Lithography
Immersion lithography is a technique used in semiconductor manufacturing to enhance the resolution and accuracy of the lithographic process. It involves using a liquid medium, typically water, between the lens and the wafer during exposure. By using a liquid with a higher refractive index than air, immersion lithography allows for smaller features to be created on the wafer. Immersion lithography replaces the usual air gap between the final lens and the wafer surface with a liquid medium that has a refractive index greater than one. The angular resolution is increased by a factor equal to the refractive index of the liquid. Current immersion lithography tools use highly purified water for this liquid, achieving feature sizes below 45 nanometers. Background The ability to resolve features in optical lithography is directly related to the numerical aperture of the imaging equipment, the numerical aperture being the sine of the maximum refraction angle multiplied by the refracti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Double Patterning
Multiple patterning (or multi-patterning) is a class of technologies for manufacturing integrated circuits (ICs), developed for photolithography to enhance the feature density. It is expected to be necessary for the 10 nm and 7 nm node semiconductor processes and beyond. The premise is that a single lithographic exposure may not be enough to provide sufficient resolution. Hence additional exposures would be needed, or else positioning patterns using etched feature sidewalls (using spacers) would be necessary. Even with single exposure having sufficient resolution, extra masks have been implemented for better patterning quality such as by Intel for line-cutting at its 45nm node or TSMC at its 28nm node. Even for electron-beam lithography, single exposure appears insufficient at ~10 nm half-pitch, hence requiring double patterning. Double patterning lithography was first demonstrated in 1983 by D. C. Flanders and N. N. Efremow. Since then several double patterning te ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Interuniversity Microelectronics Centre
Interuniversity Microelectronics Centre (IMEC; officially stylised as imec) is an international Research and development, research & development organization, active in the fields of nanoelectronics and Digital electronics, digital technologies with headquarters in Belgium. Luc Van den hove has served as president and CEO since 2009. IMEC has more than 5,500 employees and researchers for advanced semiconductor R&D activities, also including system scaling, silicon photonics, artificial intelligence, beyond 5G communications and sensing technologies. In 2022, IMEC's revenue (P&L) totaled 846 million euro. Overview IMEC employs more than 5,500 researchers from more than 90 countries; it has numerous facilities dedicated to research and development around the world, including 12,000 square meters of cleanroom capacity for semiconductor processing. The IMEC headquarters are located in Leuven. History In 1982, the Flemish Government set up a program to strengthen the microelectro ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
