Shallow Trench Isolation
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Shallow Trench Isolation
Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller. Older CMOS technologies and non-MOS technologies commonly use isolation based on LOCOS. STI is created early during the semiconductor device fabrication process, before transistors are formed. The key steps of the STI process involve etching a pattern of trenches in the silicon, depositing one or more dielectric materials (such as silicon dioxide) to fill the trenches, and removing the excess dielectric using a technique such as chemical-mechanical planarization. Certain semiconductor fabrication technologies also include deep trench isolation, a related feature often found in analog integrated circuits. The effect of the trench edge has given rise to what has recently been termed the "reverse narrow ...
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Isolation Pitch Vs Design Rule
Social isolation, Isolation is the near or complete lack of social contact by an individual. Isolation or isolated may also refer to: Sociology and psychology *Social isolation *Isolation (psychology), a defense mechanism in psychoanalytic theory *Emotional isolation, a feeling of isolation despite a functioning social network *Isolation effect, a psychological effect of distinctive items more easily remembered Mathematics * Real-root isolation * Isolation lemma, a technique used to reduce the number of solutions to a computational problem. * Isolated point, a topological notion of having no points near a given point Natural sciences *Electrical or galvanic isolation, isolating functional sections of electrical systems to prevent current flowing between them *An isolated system, a system without any external exchange *Isolating language, a type of language with a low morpheme-per-word ratio *Isolation (microbiology), techniques to separate microbes from a sample containing mixt ...
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FEOL
The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. FEOL generally covers everything up to (but not including) the deposition of metal interconnect layers. Steps For the CMOS process, FEOL contains all fabrication steps needed to form isolated CMOS elements: # Selecting the type of wafer to be used; Chemical-mechanical planarization (CMP) and cleaning of the wafer. # Shallow trench isolation (STI) (or LOCOS in early processes with feature size > 0.25 μm); # Well formation; # Gate module formation; # Source and drain module formation. Finally, the surface is treated to prepare the contacts for the subsequent metallization. This concludes the FEOL process, that is, all devices have been built. Following these steps, the devices must be connected electrically as per the nets to build the electrical circuit. This is done in the back end of l ...
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Chemical-mechanical Polishing
Chemical mechanical polishing (CMP) (also called chemical mechanical planarization) is a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a wikt:hybrid, hybrid of chemical etching and free abrasive polishing. It is used in the semiconductor industry to polish semiconductor wafers as part of the integrated circuit manufacturing process. Description The process uses an abrasive and corrosive chemical slurry (commonly a colloid) in conjunction with a polishing pad and retaining ring, typically of a greater diameter than the wafer. The pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring. The dynamic polishing head is rotated with different axes of rotation (i.e., not wiktionary:concentric, concentric). This removes material and tends to even out any irregular topography, making the wafer flat or planar. This may be necessary to set up the wafer for the formation of ad ...
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Reactive-ion Etching
Reactive-ion etching (RIE) is an etching (microfabrication), etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than Isotropic etching, wet etching. RIE uses chemical reaction, chemically reactive plasma (physics), plasma to remove material deposited on wafer (electronics), wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it. Equipment A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer (electronics), wafer platter situated in the bottom portion of the chamber. The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber, and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for ...
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Lithography
Lithography () is a planographic method of printing originally based on the miscibility, immiscibility of oil and water. The printing is from a stone (lithographic limestone) or a metal plate with a smooth surface. It was invented in 1796 by the German author and actor Alois Senefelder and was initially used mostly for sheet music, musical scores and maps.Meggs, Philip B. ''A History of Graphic Design''. (1998) John Wiley & Sons, Inc. p 146, .Carter, Rob, Ben Day, Philip Meggs. ''Typographic Design: Form and Communication'', Third Edition. (2002) John Wiley & Sons, Inc. p. 11. Lithography can be used to print text or images onto paper or other suitable material. A lithograph is something printed by lithography, but this term is only used for printmaking, fine art prints and some other, mostly older, types of printed matter, not for those made by modern commercial lithography. Traditionally, the image to be printed was drawn with a greasy substance, such as oil, fat, or wax on ...
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Subthreshold Leakage
Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its threshold voltage, which is the minimum gate voltage required to switch the device between ''on'' and ''off'' states. However, as the drain current in a MOS device varies exponentially with gate voltage, the conduction does not immediately become zero when the threshold voltage is reached. Rather it continues showing an exponential behavior with respect to the subthreshold gate voltage. When plotted against the applied gate voltage, this subthreshold drain current exhibits a log-linear slope, which is defined as the subthreshold slope. Subthreshold slope is used as a figure of merit for the switching efficiency of a transistor.''Physics of Se ...
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Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behavior under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor. With no VGS, dopant ions added to the body of the FET form a region ...
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Electric Field
An electric field (sometimes called E-field) is a field (physics), physical field that surrounds electrically charged particles such as electrons. In classical electromagnetism, the electric field of a single charge (or group of charges) describes their capacity to exert attractive or repulsive forces on another charged object. Charged particles exert attractive forces on each other when the sign of their charges are opposite, one being positive while the other is negative, and repel each other when the signs of the charges are the same. Because these forces are exerted mutually, two charges must be present for the forces to take place. These forces are described by Coulomb's law, which says that the greater the magnitude of the charges, the greater the force, and the greater the distance between them, the weaker the force. Informally, the greater the charge of an object, the stronger its electric field. Similarly, an electric field is stronger nearer charged objects and weaker f ...
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Analog Chip
Analog or analogue may refer to: Computing and electronics * Analog signal, in which information is encoded in a continuous variable ** Analog device, an apparatus that operates on analog signals *** Analog electronics, circuits which use analog signals **** Analog computer, a computer that uses analog signals ** Analog recording, information recorded using an analog signal * Functional analog (electronic), a system that fulfills the same function as another * Structural analog (electronic), a system that has the same structure as another Entertainment Albums and songs * ''Analog'' (album), an album by Eureka Farm * "Analog" (song), a song by Tyler, The Creator, featuring Hodgy Beats, from ''Goblin'' * ''Analogue'' (album), a 2005 album by A-ha ** "Analogue" (All I Want), the title track of the 2005 album by A-ha Books and magazines * ''Analog Science Fiction and Fact'', a science-fiction magazine * '' ANALOG Computing'', a 1981–1989 magazine about Atari computers * ...
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Deep Trench Isolation
Deep or The Deep may refer to: Places United States * Deep Creek (Appomattox River tributary), Virginia * Deep Creek (Great Salt Lake), Idaho and Utah * Deep Creek (Mahantango Creek tributary), Pennsylvania * Deep Creek (Mojave River tributary), California * Deep Creek (Pine Creek tributary), Pennsylvania * Deep Creek (Soque River tributary), Georgia * Deep Creek (Texas), a tributary of the Colorado River (Texas), Colorado River * Deep Creek (Washington), a tributary of the Spokane River * Deep River (Indiana), a tributary of the Little Calumet River * Deep River (Iowa), a minor tributary of the English River * Deep River (North Carolina) * Deep River (Washington), a minor List of rivers of Washington (state)#Lower Columbia Basin, tributary of the Columbia River * Deep Voll Brook, New Jersey, also known as Deep Brook Elsewhere * Deep Creek (Bahamas) * Deep Creek (Melbourne, Victoria), Australia, a tributary of the Maribyrnong River * Deep River (Western Australia) People * Dee ...
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Silicon Dioxide
Silicon dioxide, also known as silica, is an oxide of silicon with the chemical formula , commonly found in nature as quartz. In many parts of the world, silica is the major constituent of sand. Silica is one of the most complex and abundant families of materials, existing as a compound of several minerals and as a synthetic product. Examples include fused quartz, fumed silica, opal, and aerogels. It is used in structural materials, microelectronics, and as components in the food and pharmaceutical industries. All forms are white or colorless, although impure samples can be colored. Silicon dioxide is a common fundamental constituent of glass. Structure In the majority of silicon dioxides, the silicon atom shows tetrahedral coordination, with four oxygen atoms surrounding a central Si atomsee 3-D Unit Cell. Thus, SiO2 forms 3-dimensional network solids in which each silicon atom is covalently bonded in a tetrahedral manner to 4 oxygen atoms. In contrast, CO2 is a li ...
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