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Junction Field-Effect Transistor
The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between ''source'' and ''drain'' terminals. By applying a reverse bias voltage to a ''gate'' terminal, the channel is ''pinched'', so that the electric current is impeded or switched off completely. A JFET is usually conducting when there is zero voltage between its gate and source terminals. If a potential difference of the proper polarity is applied between its gate and source terminals, the JFET will be more resistive to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs are sometimes referred t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electric Current
An electric current is a stream of charged particles, such as electrons or ions, moving through an electrical conductor or space. It is measured as the net rate of flow of electric charge through a surface or into a control volume. The moving particles are called charge carriers, which may be one of several types of particles, depending on the conductor. In electric circuits the charge carriers are often electrons moving through a wire. In semiconductors they can be electrons or holes. In an electrolyte the charge carriers are ions, while in plasma, an ionized gas, they are ions and electrons. The SI unit of electric current is the ampere, or ''amp'', which is the flow of electric charge across a surface at the rate of one coulomb per second. The ampere (symbol: A) is an SI base unit. Electric current is measured using a device called an ammeter. Electric currents create magnetic fields, which are used in motors, generators, inductors, and transformers. In ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Resistive
The electrical resistance of an object is a measure of its opposition to the flow of electric current. Its reciprocal quantity is , measuring the ease with which an electric current passes. Electrical resistance shares some conceptual parallels with mechanical friction. The SI unit of electrical resistance is the ohm (), while electrical conductance is measured in siemens (S) (formerly called the 'mho' and then represented by ). The resistance of an object depends in large part on the material it is made of. Objects made of electrical insulators like rubber tend to have very high resistance and low conductance, while objects made of electrical conductors like metals tend to have very low resistance and high conductance. This relationship is quantified by resistivity or conductivity. The nature of a material is not the only factor in resistance and conductance, however; it also depends on the size and shape of an object because these properties are extensive rather than intens ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Walter Houser Brattain
Walter Houser Brattain (; February 10, 1902 – October 13, 1987) was an American physicist at Bell Labs who, along with fellow scientists John Bardeen and William Shockley, invented the point-contact transistor in December 1947. They shared the 1956 Nobel Prize in Physics for their invention. Brattain devoted much of his life to research on surface states. Biography Walter Brattain was born in Amoy (now Xiamen), Fujian, Qing China, to American parents Ross R. Brattain and Ottilie Houser Brattain. Ross R. Brattain was a teacher at the Ting-Wen Institute, a private school for Chinese boys; Ottilie Houser Brattain was a gifted mathematician. Both were graduates of Whitman College. Ottilie and baby Walter returned to the United States in 1903, and Ross followed shortly afterward. The family lived for several years in Spokane, Washington, then settled on a cattle ranch near Tonasket, Washington in 1911. Brattain attended high school in Washington, spending one year at Queen ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
John Bardeen
John Bardeen (; May 23, 1908 – January 30, 1991) was an American physicist and engineer. He is the only person to be awarded the Nobel Prize in Physics twice: first in 1956 with William Shockley and Walter Brattain for the invention of the transistor; and again in 1972 with Leon N. Cooper and John Robert Schrieffer for a fundamental theory of conventional superconductivity known as the BCS theory. The transistor revolutionized the electronics industry, making possible the development of almost every modern electronic device, from telephones to computers, and ushering in the Information Age. Bardeen's developments in superconductivity—for which he was awarded his second Nobel Prize—are used in nuclear magnetic resonance spectroscopy (NMR), medical magnetic resonance imaging (MRI), and superconducting quantum circuits. Born and raised in Wisconsin, Bardeen received a Ph.D. in physics from Princeton University. After serving in World War II, he was a researcher at Bell Lab ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heinrich Welker
Heinrich Johann Welker (9 September 1912 in Ingolstadt – 25 December 1981 in Erlangen) was a German theoretical and applied physicist who invented the " transistron", a transistor made at Westinghouse independently of the first successful transistor made at Bell Laboratories. He did fundamental work in III-V compound semiconductors, and paved the way for microwave semiconductor elements and laser diodes. Biography and important work Starting in 1931, Welker studied at the University of Munich under Arnold Sommerfeld, and was granted a Ph.D. in 1936. The book '' Electrodynamics - Lectures on Theoretical Physics Volume III'' by Sommerfeld was based on lecture notes prepared by Welker during the winter semester of 1933/1934. Welker was granted his Habilitation under Sommerfeld in 1939.Mehra, Volume 6, Part 2, 2001, p. 868. During the war years, 1940 to 1945, Welker worked at Luftfunkforschungs Institut in Oberpfaffenhofen, but still maintained association (1942 to 1944) ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Julius Edgar Lilienfeld
Julius Edgar Lilienfeld (April 18, 1882 – August 28, 1963) was an Austro-Hungarian, and later American (where he moved in 1921) physicist and electrical engineer, who was credited with the first patent on the field-effect (FET) (1925). Because of his failure to publish articles in learned journals and because high-purity semiconductor materials were not available yet, his FET patent never achieved fame, causing confusion for later inventors. Early life Lilienfeld was born into a German-speaking Ashkenazi Jewish family in Lemberg (present-day Lviv) in the Austrian part of the Austro-Hungarian Empire. Education Between 1900 and 1904, Lilienfeld studied at the Friedrich-Wilhelms-Universität (renamed Humboldt University in 1949), in Berlin Berlin ( , ) is the capital and largest city of Germany by both area and population. Its 3.7 million inhabitants make it the European Union's most populous city, according to population within city limits. One of Germany's si ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Input Impedance
The input impedance of an electrical network is the measure of the opposition to current ( impedance), both static ( resistance) and dynamic ( reactance), into the load network that is ''external'' to the electrical source. The input admittance (the reciprocal of impedance) is a measure of the load's propensity to draw current. The source network is the portion of the network that transmits power, and the load network is the portion of the network that consumes power. Input impedance If the load network were replaced by a device with an output impedance equal to the input impedance of the load network (equivalent circuit), the characteristics of the source-load network would be the same from the perspective of the connection point. So, the voltage across and the current through the input terminals would be identical to the chosen load network. Therefore, the input impedance of the load and the output impedance of the source determine how the source current and voltage change. T ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Common Drain
In electronics, a common-drain amplifier, also known as a source follower, is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit (NMOS) the gate terminal of the transistor serves as the signal input, the source is the output, and the drain is ''common'' to both (input and output), hence its name. The analogous bipolar junction transistor circuit is the common-collector amplifier. This circuit is also commonly called a "stabilizer". In addition, this circuit is used to transform impedances. For example, the Thévenin resistance of a combination of a voltage follower driven by a voltage source with high Thévenin resistance is reduced to only the output resistance of the voltage follower (a small resistance). That resistance reduction makes the combination a more ideal voltage source. Conversely, a voltage follower inserted between a driving stage and a high load (i.e. a low resistance) presents ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Common Source
In electronics, a common-source amplifier is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a voltage or transconductance amplifier. The easiest way to tell if a FET is common source, common drain, or common gate is to examine where the signal enters and leaves. The remaining terminal is what is known as "common". In this example, the signal enters the gate, and exits the drain. The only terminal remaining is the source. This is a common-source FET circuit. The analogous bipolar junction transistor circuit may be viewed as a transconductance amplifier or as a voltage amplifier. (See classification of amplifiers). As a transconductance amplifier, the input voltage is seen as modulating the current going to the load. As a voltage amplifier, input voltage modulates the current flowing through the FET, changing the voltage across the output resistance according to Ohm's law. However, the FET device's output resistance typic ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
P-type Semiconductor
An extrinsic semiconductor is one that has been '' doped''; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an '' intrinsic semiconductor''. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An '' electron donor'' dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An ''electron acceptor'' dopant ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
N-type Semiconductor
An extrinsic semiconductor is one that has been '' doped''; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an '' intrinsic semiconductor''. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An '' electron donor'' dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An ''electron acceptor'' dopant ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
