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FinFET
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices exhibit significantly faster switching times and higher current density than planar CMOS (complementary metal–oxide–semiconductor) technology, resulting in enhanced performance and power efficienc FinFET is a type of non-planar transistor, or "3D" transistor. It is the basis for modern nanoelectronic semiconductor device fabrication. Microchips utilizing FinFET gates first became commercialized in the first half of the 2010s, and became the dominant gate design at 14 nm, 10 nm and 7 nm process nodes. It is common for a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doublegate FinFET-en
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies being developed by MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's law (in its narrow, specific version concerning density scaling ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Multigate Device
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate (transistor), gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the #GAAFET, GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies being developed by MOSFET, MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cell (computing), memory cells, colloquially referred to as extending Moore's law ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Double-gate
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies being developed by MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's law (in its narrow, specific version concerning density scaling ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
14 Nm
The "14 nanometer process" refers to a marketing term for the MOSFET technology node that is the successor to the "22nm" (or "20nm") node. The "14nm" was so named by the International Technology Roadmap for Semiconductors (ITRS). Until about 2011, the node following "22nm" was expected to be "16nm". All "14nm" nodes use FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology. Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a "14nm" device is fourteen nanometers. For example, TSMC and Samsung's "10 nm" processes are somewhere between Intel's "14 nm" and "10 nm" processes in transistor density, and TSMC's " 7 nm" processes are dimensionally similar to Intel's "10 nm" process. Samsung Electronics taped out ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Device Fabrication
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as microprocessors, microcontrollers, and memories (such as Random-access memory, RAM and flash memory). It is a multiple-step Photolithography, photolithographic and physico-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer (electronics), wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. This article focuses on the manufacture of integrated circuits, however steps such as etching and photolithography can be used to manufacture other devices such as LCD and OLED displays. The fabrication process is performed in highly specialized semiconductor fabrication plants, also called foundries or "fabs", with the cen ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Node
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as microprocessors, microcontrollers, and memories (such as RAM and flash memory). It is a multiple-step photolithographic and physico-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. This article focuses on the manufacture of integrated circuits, however steps such as etching and photolithography can be used to manufacture other devices such as LCD and OLED displays. The fabrication process is performed in highly specialized semiconductor fabrication plants, also called foundries or "fabs", with the central part being the " clean room". In more advanced ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
7 Nm
In semiconductor manufacturing, the "7 nm" process is a term for the MOSFET technology node following the 10 nm process, "10 nm" node, defined by the International Roadmap for Devices and Systems (IRDS), which was preceded by the International Technology Roadmap for Semiconductors (ITRS). It is based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology. As of 2021, the IRDS Lithography standard gives a table of dimensions for the "7 nm" node, with examples given below: The 2021 IRDS Lithography standard is a retrospective document, as the first volume production of a "7 nm" branded process was in 2016 with Taiwan Semiconductor Manufacturing Company's (TSMC) production of 256Mbit static random-access memory, SRAM memory chips using a "7nanometre, nm" process called N7. Samsung started mass production of their "7nm" process (7LPP) devices in 2018. These process nodes had the same approximate transistor density as Intel's "''10 nm Enhanced Supe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
10 Nm Process
In semiconductor fabrication, the International Technology Roadmap for Semiconductors (ITRS) defines the "10 nanometer process" as the MOSFET technology node following the "14 nm" node. Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a "10nm" device is ten nanometers. For example, GlobalFoundries' " 7 nm" processes are dimensionally similar to Intel's "10 nm" process. TSMC and Samsung's "10 nm" processes are somewhere between Intel's "14 nm" and "10 nm" processes in transistor density. The transistor density (number of transistors per square millimetre) is more important than transistor size, since smaller transistors no longer necessarily mean improved performance, or an increase in the number of transistors. All production "10 nm" processes are based on FinFET (fin field-effect transistor) tec ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: ''source'', ''gate'', and ''drain''. FETs control the current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal–oxide–semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by the Austr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gate Electrode
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: ''source'', ''gate'', and ''drain''. FETs control the current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal–oxide–semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by the Austro ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electric power, power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminal (electronics), terminals for connection to an electronic circuit. A voltage or Electric current, current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions. Physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transisto ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
