Wright Etch
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Wright Etch
The Wright etch (also Wright-Jenkins etch) is a preferential etch for revealing defects in - and -oriented, p- and n-type silicon wafers used for making transistors, microprocessors, memories, and other components. Revealing, identifying, and remedying such defects is essential for progress along the path predicted by Moore's Law. It was developed by Margaret Wright Jenkins (1936-2018) in 1976 while working in research and development at Motorola Inc. in Phoenix, AZ. It was published in 1977. This etchant reveals clearly defined oxidation-induced stacking faults, dislocations, swirls and striations with minimum surface roughness or extraneous pitting. These defects are known causes of shorts and current leakage in finished semiconductor devices (such as transistors) should they fall across isolated junctions. A relatively low etch rate (~1 micrometre per minute) at room temperature provides etch control. The long shelf life of this etchant allows the solution to be stored in large ...
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Margaret Wright Jenkins 2014
Margaret is a female first name, derived via French () and Latin () from grc, μαργαρίτης () meaning "pearl". The Greek is borrowed from Persian. Margaret has been an English name since the 11th century, and remained popular throughout the Middle Ages. It became less popular between the 16th century and 18th century, but became more common again after this period, becoming the second-most popular female name in the United States in 1903. Since this time, it has become less common, but was still the ninth-most common name for women of all ages in the United States as of the 1990 census. Margaret has many diminutive forms in many different languages, including Maggie, Madge, Daisy, Margarete, Marge, Margo, Margie, Marjorie, Meg, Megan, Rita, Greta, Gretchen, and Peggy. Name variants Full name * (Irish) * (Irish) * (Dutch), (German), (Swedish) * (English) Diminutives * (English) * (English) First half * ( French) * (Welsh) Second half * (English ...
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