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Trimethylgallium
Trimethylgallium, often abbreviated to TMG or TMGa, is the organogallium compound with the formula Ga(CH3)3. It is a colorless, pyrophoric liquid. Unlike trimethylaluminium, TMG adopts a monomeric structure. When examined in detail, the monomeric units are clearly linked by multiple weak Ga---C interactions, reminiscent of the situation for trimethylindium. Preparation Two forms of TMG are typically investigated: Lewis base adducts or TMG itself. All are prepared by reactions of gallium trichloride with various methylating agents. When the methylation is conducted with methylmagnesium iodide in diethyl ether, the product is the poorly volatile diethyl ether adduct. As noted by TMG discoverers Kraus and Toonder in 1933, the ether ligand is not readily lost, although it may be displaced with liquid ammonia. When the alkylation is conducted with methyl lithium in the presence of a tertiary phosphine the air-stable phosphine adduct is obtained: : Heating the solid phosphin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Trimethylindium
Trimethylindium, often abbreviated to TMI or TMIn, is the organoindium compound with the formula In(CH3)3. It is a colorless, pyrophoric solid. Unlike trimethylaluminium, but akin to trimethylgallium, TMI is monomeric. Preparation TMI is prepared by the reaction of indium trichloride with methyl lithium. : InCl3 + 3LiMe → Me3In.OEt2 + 3LiCl Properties Compared to trimethylaluminium and trimethylgallium, InMe3 is a weaker Lewis acid. It forms adducts with secondary amines and phosphines. A complex with the heterocyclic triazine ligand (PriNCH2)3 forms a complex with 6-coordinate In, where the C-In-C angles are 114°-117° with three long bonds to the tridentate ligand with N-In-N angles of 48.6° and long In-N bonds of 278 pm. Structure In the gaseous state InMe3 is monomeric, with a trigonal planar structure, and in benzene solution it is tetrameric.''CVD of compound semiconductors, Precursor Synthesis, Development and Applications'', Anthony C. Jones, Paul O'Brien, Jo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Triethylgallium
Triethylgallium is the organogallium compound with the formul Ga(C2H5)3. Also called TEGa, it is a metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of compound semiconductors. It is a colorless pyrophoric liquid, typically handled with air-free techniques. It was discovered by Cornell University chemists L. M. Dennis and Winton Patnode in 1931. Preparation and reactions The main routes involve alkylation of gallium trichloride. When this alkylation is effected with ethyl Grignard reagent in ether, the product is the diethyl ether adduct of triethylgallium. The ether is not easily removed. Thus an alternative route involves transmetalation with triethylaluminium according to this simplified equation: : Triethylgallium readily converts to the air-stable, colorless alkoxide by two routes, oxidation and alcoholysis: : : The sweet odor associated with triethylgallium is due to the alkoxide. Redistribution reactions occur with gallium trichloride: : App ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Trichloride
Gallium(III) chloride is an inorganic chemical compound with the formula which forms a monohydrate, . Solid gallium(III) chloride is a deliquescent colorless crystals and exists as a dimer with the formula . It is colourless and soluble in virtually all solvents, even alkanes, which is unusual for a metal halide. It is the main precursor to most derivatives of gallium and a reagent in organic synthesis. As a Lewis acid, is milder than aluminium chloride. It is also easier to reduce than aluminium chloride. The coordination chemistry of Ga(III) and Fe(III) are similar, so gallium(III) chloride has been used as a diamagnetic analogue of ferric chloride. Preparation Gallium(III) chloride can be prepared from the elements by heating gallium metal in a stream of chlorine at 200 °C and purifying the product by sublimation under vacuum. : It can also be prepared from by heating gallium oxide with thionyl chloride: : Gallium metal reacts slowly with hydrochloric acid, produci ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. History Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. The semiconductor properties of GaAs and other Compound semiconductor, III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 and described in a 1952 publication. Commercial production of its monocrystals commenced in 1954, and more studies followed in the 195 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Nitride
Gallium nitride () is a binary III/ V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronics, high-power and high-frequency devices. For example, GaN is the substrate that makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in high-radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Trimethylaluminium
Trimethylaluminium or TMA is one of the simplest examples of an organoaluminium compound. Despite its name it has the formula (abbreviated as , where Me stands for methyl), as it exists as a dimer. This colorless liquid is pyrophoric. It is an industrially important compound, closely related to triethylaluminium. Structure and bonding The structure and bonding in and diborane are analogous (R = alkyl). In , the Al-C(terminal) and Al-C(bridging) distances are 1.97 and 2.14 Å, respectively. The Al center is tetrahedral. The carbon atoms of the bridging methyl groups are each surrounded by five neighbors: three hydrogen atoms and two aluminium atoms. The methyl groups interchange readily intramolecularly. At higher temperatures, the dimer cracks into monomeric . Synthesis TMA is prepared via a two-step process that can be summarized as follows: : Applications Catalysis Starting with the invention of Ziegler-Natta catalysis, organoaluminium compounds have a prominent role ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminium Gallium Indium Phosphide
Aluminium gallium indium phosphide (, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It has a direct bandgap ranging from ultraviolet to infrared photon energies. AlGaInP is used in heterostructures for high-brightness red, orange, green, and yellow light-emitting diodes. It is also used to make diode lasers. Preparation AlGaInP is typically grown by heteroepitaxy on gallium arsenide or gallium phosphide substrates in order to form a quantum well structure that can be fabricated into different devices. Properties The direct bandgap of AlGaInP encompasses the energy range of visible light (1.7 eV - 3.1 eV). By selecting a specific composition of AlGaInP, the bandgap can be selected to correspond to the energy of a specific wavelength of visible light. For instance, this can be used to obtain LEDs that emit red, orange, or yellow light. Like most other ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Gallium Nitride
Indium gallium nitride (InGaN, ) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/ group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. InxGa1−xN has a direct bandgap span from the infrared (0.69 eV) for InN to the ultraviolet (3.4 eV) of GaN. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7. Applications LEDs Indium gallium nitride is the light-emitting layer in modern blue and green LEDs and often grown on a GaN buffer on a transparent substrate as, e.g. sapphire or silicon carbide. It has a high heat capacity and its sensitivity to ionizing radiation is low (like other group III nitrides), making it also a potentially suitable material for solar photovoltaic devices, specifically for arrays for satellites. It is theoretically predicted that spinodal decomposition of indium nitride should occur for compositions between 15% and 85%, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Gallium Arsenide
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are Group 13 element, group III elements of the periodic table while arsenic is a Group 15 element, group V element. Alloys made of these chemical groups are referred to as III-V compound semiconductor, "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics. The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications. Nomenclature Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably. According to IUPAC standards the preferred nomenclature for the alloy is GaxIn1-xAs where the group-III elements appear in order of increasing atomic number ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Chemical Vapour Deposition Precursors
A chemical substance is a unique form of matter with constant chemical composition and characteristic properties. Chemical substances may take the form of a single element or chemical compounds. If two or more chemical substances can be combined without reacting, they may form a chemical mixture. If a mixture is separated to isolate one chemical substance to a desired degree, the resulting substance is said to be chemically pure. Chemical substances can exist in several different physical states or phases (e.g. solids, liquids, gases, or plasma) without changing their chemical composition. Substances transition between these phases of matter in response to changes in temperature or pressure. Some chemical substances can be combined or converted into new substances by means of chemical reactions. Chemicals that do not possess this ability are said to be inert. Pure water is an example of a chemical substance, with a constant composition of two hydrogen atoms bonded to a sin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
