|
Nanoantenna
An optical rectenna is a rectenna (rectifying antenna) that works with visible or infrared light. A rectenna is a circuit containing an antenna and a diode, which turns electromagnetic waves into direct current electricity. While rectennas have long been used for radio waves or microwaves, an optical rectenna would operate the same way but with infrared or visible light, turning it into electricity. While traditional (radio- and microwave) rectennas are fundamentally similar to optical rectennas, it is vastly more challenging in practice to make an optical rectenna. One challenge is that light has such a high frequency—hundreds of Hertz, terahertz for visible light—that only a few types of specialized diodes can switch quickly enough to rectifier, rectify it. Another challenge is that antennas tend to be a similar size to a wavelength, so a very tiny optical antenna requires a challenging nanotechnology fabrication process. A third challenge is that, being very small, an optic ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Radiation Spectrum
In physics, radiation is the emission or transmission of energy in the form of waves or particles through space or through a material medium. This includes: * ''electromagnetic radiation'', such as radio waves, microwaves, infrared, visible light, ultraviolet, x-rays, and Gamma ray, gamma radiation (γ) * ''particle radiation'', such as alpha radiation, alpha radiation (α), beta radiation, beta radiation (β), proton radiation and neutron radiation (particles of non-zero rest energy) * ''acoustics, acoustic radiation'', such as ultrasound, sound, and seismic waves (dependent on a physical transmission medium) * ''gravitational wave, gravitational radiation'', that takes the form of gravitational waves, or ripples in the curvature of spacetime Radiation is often categorized as either ''ionizing radiation, ionizing'' or ''non-ionizing radiation, non-ionizing'' depending on the energy of the radiated particles. Ionizing radiation carries more than 10 electron volt, eV, which ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Baratunde A
Baratunde Rafiq Thurston (; born September 11, 1977) is an American writer, comedian, and commentator. Thurston co-founded the black political bloJack and Jill Politics whose coverage of the 2008 Democratic National Convention was archived in the Library of Congress, and was director of digital for The Onion. In 2012, his book ''How to be Black'' became a ''New York Times'' bestseller. Early life and education Thurston was born in Washington, D.C. He grew up at the intersection of 14th and Newton Streets in the Columbia Heights neighborhood of Washington. His father was killed when he was young and his mother worked in the Office of the Comptroller of the Currency. He has an older sister. In junior high, his mother and he moved to a suburban black neighborhood in Maryland. Thurston was educated at the Sidwell Friends School and Harvard University where he graduated with a degree in Philosophy. Career As part of ''Laughing Liberally'', Thurston emceed the YearlyKos convention in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Tunnelling
Quantum tunnelling, also known as tunneling ( US) is a quantum mechanical phenomenon whereby a wavefunction can propagate through a potential barrier. The transmission through the barrier can be finite and depends exponentially on the barrier height and barrier width. The wavefunction may disappear on one side and reappear on the other side. The wavefunction and its first derivative are continuous. In steady-state, the probability flux in the forward direction is spatially uniform. No particle or wave is lost. Tunneling occurs with barriers of thickness around 1–3 nm and smaller. Some authors also identify the mere penetration of the wavefunction into the barrier, without transmission on the other side as a tunneling effect. Quantum tunneling is not predicted by the laws of classical mechanics where surmounting a potential barrier requires sufficient kinetic energy. Quantum tunneling plays an essential role in physical phenomena such as nuclear fusion and alpha radi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Parasitic Capacitance
Parasitic capacitance is an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other. When two electrical conductors at different voltages are close together, the electric field between them causes electric charge to be stored on them; this effect is capacitance. All practical circuit elements such as inductors, diodes, and transistors have internal capacitance, which can cause their behavior to depart from that of ideal circuit elements. Additionally, there is always non-zero capacitance between any two conductors; this can be significant with closely spaced conductors, such as wires or printed circuit board traces. The parasitic capacitance between the turns of an inductor or other wound component is often described as ''self-capacitance''. However, in electromagnetics, the term self-capacitance more correctly refers to a different phenomenon: the capacitance of a c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tunnel Diode
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively " negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by General Electric and other companies from about 1960, and are still made in low volume today. Tunnel diodes have a heavily doped positive-to-negative (P-N) junction that is about 10 nm (100 Å) wide. The heavy doping results in a broken band gap, where conduction band electron states on the N-side are more o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Skin Effect
Skin effect is the tendency of an alternating electric current (AC) to become distributed within a conductor such that the current density is largest near the surface of the conductor and decreases exponentially with greater depths in the conductor. The electric current flows mainly at the "skin" of the conductor, between the outer surface and a level called the skin depth. Skin depth depends on the frequency of the alternating current; as frequency increases, current flow moves to the surface, resulting in less skin depth. Skin effect reduces the effective cross-section of the conductor and thus increases its effective resistance. Skin effect is caused by opposing eddy currents induced by the changing magnetic field resulting from the alternating current. At 60 Hz in copper, the skin depth is about 8.5 mm. At high frequencies the skin depth becomes much smaller. Increased AC resistance caused by the skin effect can be mitigated by using specially woven litz wire. Be ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Skin Effect
Skin effect is the tendency of an alternating electric current (AC) to become distributed within a conductor such that the current density is largest near the surface of the conductor and decreases exponentially with greater depths in the conductor. The electric current flows mainly at the "skin" of the conductor, between the outer surface and a level called the skin depth. Skin depth depends on the frequency of the alternating current; as frequency increases, current flow moves to the surface, resulting in less skin depth. Skin effect reduces the effective cross-section of the conductor and thus increases its effective resistance. Skin effect is caused by opposing eddy currents induced by the changing magnetic field resulting from the alternating current. At 60 Hz in copper, the skin depth is about 8.5 mm. At high frequencies the skin depth becomes much smaller. Increased AC resistance caused by the skin effect can be mitigated by using specially woven litz wire. Be ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Alternating Current
Alternating current (AC) is an electric current which periodically reverses direction and changes its magnitude continuously with time in contrast to direct current (DC) which flows only in one direction. Alternating current is the form in which electric power is delivered to businesses and residences, and it is the form of electrical energy that consumers typically use when they plug kitchen appliances, televisions, fans and electric lamps into a wall socket. A common source of DC power is a battery cell in a flashlight. The abbreviations ''AC'' and ''DC'' are often used to mean simply ''alternating'' and ''direct'', as when they modify '' current'' or '' voltage''. The usual waveform of alternating current in most electric power circuits is a sine wave, whose positive half-period corresponds with positive direction of the current and vice versa. In certain applications, like guitar amplifiers, different waveforms are used, such as triangular waves or square waves. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metal-insulator-insulator-metal
Metal-insulator-metal (MIM) diode is a type of nonlinear device very similar to a semiconductor diode that is capable of very fast operation. Depending on the geometry and the material used for fabrication, the operation mechanisms are governed either by quantum tunnelling or thermal activation. In 1948, Torrey et al. stated that "It should be possible to make metal-insulator-metal rectifiers with much smaller spreading resistances than metal-semiconductor rectifiers have, consequently giving greater rectification efficiency at high frequencies". But due to fabrication difficulties, two decades passed before the first device could be successfully created. Some of the very first MIM diodes to be fabricated came from Bell Labs in the late 1960s and early 1970s Brinkman et al. demonstrated the first zero-bias MIM tunneling diode with significant responsivity. When they are using tunneling transport, the MIM diode can be very fast. As soon as 1974, this diode was reportedly used as a mix ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hafnium(IV) Oxide
Hafnium(IV) oxide is the inorganic compound with the formula . Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium(IV) oxide is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of graphite or carbon tetrachloride to give hafnium tetrachloride. Structure Hafnia typically adopts the same structure as zirconia (ZrO2). Unlike TiO2, which features six-coordinate Ti in all phases, zirconia and hafnia consist of seven-coordinate metal centres. A variety of other crystalline phases have been experimentally observed, including cubic fluorite (Fmm), tetragonal (P42/nmc), monoclinic (P2 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tunneling Diode
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by General Electric and other companies from about 1960, and are still made in low volume today. Tunnel diodes have a heavily doped positive-to-negative (P-N) junction that is about 10 nm (100 Å) wide. The heavy doping results in a broken band gap, where conduction band electron states on the N-side are more or less ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
_8.5.7.1.c.svg "Click for more on -> Tunnel Diode")
