|
Gate Capacitance
In electronics, gate capacitance is the capacitance of the gate terminal of a field-effect transistor (FET). It can be expressed as the absolute capacitance of the gate of a transistor, or as the capacitance per unit area of an integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology. In generations of approximately Dennard scaling of metal-oxide-semiconductor FETs (MOSFETs), the capacitance per unit area has increased inversely with device dimensions. Since the gate area has gone down by the square of device dimensions, the gate capacitance of a transistor has gone down in direct proportion with device dimensions. With Dennard scaling, the capacitance per unit of gate width has remained approximately constant; this measurement can include gate–source and gate–drain overlap capacitances. Other scalings are not uncommon; the voltages and gate oxide thicknesses have not always decreased as rapidly as device dimensions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronics
Electronics is a scientific and engineering discipline that studies and applies the principles of physics to design, create, and operate devices that manipulate electrons and other Electric charge, electrically charged particles. It is a subfield of physics and electrical engineering which uses Passivity (engineering), active devices such as transistors, diodes, and integrated circuits to control and amplify the flow of electric current and to convert it from one form to another, such as from alternating current (AC) to direct current (DC) or from analog signal, analog signals to digital signal, digital signals. Electronic devices have significantly influenced the development of many aspects of modern society, such as telecommunications, entertainment, education, health care, industry, and security. The main driving force behind the advancement of electronics is the semiconductor industry, which continually produces ever-more sophisticated electronic devices and circuits in respo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Capacitance
Capacitance is the ability of an object to store electric charge. It is measured by the change in charge in response to a difference in electric potential, expressed as the ratio of those quantities. Commonly recognized are two closely related notions of capacitance: ''self capacitance'' and ''mutual capacitance''. An object that can be electrically charged exhibits self capacitance, for which the electric potential is measured between the object and ground. Mutual capacitance is measured between two components, and is particularly important in the operation of the capacitor, an elementary linear electronic component designed to add capacitance to an electric circuit. The capacitance between two conductors depends only on the geometry; the opposing surface area of the conductors and the distance between them; and the permittivity of any dielectric material between them. For many dielectric materials, the permittivity, and thus the capacitance, is independent of the potential ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: ''source'', ''gate'', and ''drain''. FETs control the current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal–oxide–semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by the Austr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Integrated Circuit
An integrated circuit (IC), also known as a microchip or simply chip, is a set of electronic circuits, consisting of various electronic components (such as transistors, resistors, and capacitors) and their interconnections. These components are etched onto a small, flat piece ("chip") of semiconductor material, usually silicon. Integrated circuits are used in a wide range of electronic devices, including computers, smartphones, and televisions, to perform various functions such as processing and storing information. They have greatly impacted the field of electronics by enabling device miniaturization and enhanced functionality. Integrated circuits are orders of magnitude smaller, faster, and less expensive than those constructed of discrete components, allowing a large transistor count. The IC's mass production capability, reliability, and building-block approach to integrated circuit design have ensured the rapid adoption of standardized ICs in place of designs using discre ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dennard Scaling
In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length. The law, originally formulated for MOSFETs, is based on a 1974 paper co-authored by Robert H. Dennard, after whom it is named. Statement For long MOS transistors (i.e. one side is significantly longer than the other two), with constant electric field inside the MOS, Dennard scaling gives L \propto S^, W \propto S^, t_\text \propto S^, V_\text \propto S^, V_\text \propto S^, N_\text \propto S , where parameters are scaled by a factor of . Explanation of symbols: * S: scaling factor – a factor by which all the device dimensions and voltages are scaled down * A: area of the transistor * W: width of the transistor channel * L: length of the transistor channel * C_\text: oxide capacitance � ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon Dioxide
Silicon dioxide, also known as silica, is an oxide of silicon with the chemical formula , commonly found in nature as quartz. In many parts of the world, silica is the major constituent of sand. Silica is one of the most complex and abundant families of materials, existing as a compound of several minerals and as a synthetic product. Examples include fused quartz, fumed silica, opal, and aerogels. It is used in structural materials, microelectronics, and as components in the food and pharmaceutical industries. All forms are white or colorless, although impure samples can be colored. Silicon dioxide is a common fundamental constituent of glass. Structure In the majority of silicon dioxides, the silicon atom shows tetrahedral coordination, with four oxygen atoms surrounding a central Si atomsee 3-D Unit Cell. Thus, SiO2 forms 3-dimensional network solids in which each silicon atom is covalently bonded in a tetrahedral manner to 4 oxygen atoms. In contrast, CO2 is a li ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Relative Permittivity
The relative permittivity (in older texts, dielectric constant) is the permittivity of a material expressed as a ratio with the vacuum permittivity, electric permittivity of a vacuum. A dielectric is an insulating material, and the dielectric constant of an insulator measures the ability of the insulator to store electric energy in an electrical field. Permittivity is a material's property that affects the Coulomb force between two point charges in the material. Relative permittivity is the factor by which the electric field between the charges is decreased relative to vacuum. Likewise, relative permittivity is the ratio of the capacitance of a capacitor using that material as a dielectric, compared with a similar capacitor that has vacuum as its dielectric. Relative permittivity is also commonly known as the dielectric constant, a term still used but deprecated by standards organizations in engineering as well as in chemistry. Definition Relative permittivity is typically de ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Farad
The farad (symbol: F) is the unit of electrical capacitance, the ability of a body to store an electrical charge, in the International System of Units, International System of Units (SI), equivalent to 1 coulomb per volt (C/V). It is named after the English physicist Michael Faraday (1791–1867). In SI base units 1 F = 1 kilogram, kg−1⋅meter, m−2⋅second, s4⋅ampere, A2. Definition The capacitance of a capacitor is one farad when one coulomb of charge changes the potential between the plates by one volt. Equally, one farad can be described as the capacitance which stores a one-coulomb charge across a potential difference of one volt. The relationship between capacitance, charge, and potential difference is linear. For example, if the potential difference across a capacitor is halved, the quantity of charge stored by that capacitor will also be halved. For most applications, the farad is an impractically large unit of capacitance. Most electrical and electron ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Vacuum Permittivity
Vacuum permittivity, commonly denoted (pronounced "epsilon nought" or "epsilon zero"), is the value of the absolute dielectric permittivity of classical vacuum. It may also be referred to as the permittivity of free space, the electric constant, or the distributed capacitance of the vacuum. It is an ideal (baseline) physical constant. Its CODATA value is: It is a measure of how dense of an electric field is "permitted" to form in response to electric charges and relates the units for electric charge to mechanical quantities such as length and force. For example, the force between two separated electric charges with spherical symmetry (in the vacuum of classical electromagnetism) is given by Coulomb's law: F_\text = \frac \frac Here, ''q''1 and ''q''2 are the charges, ''r'' is the distance between their centres, and the value of the constant fraction 1/(4π''ε''0) is approximately . Likewise, ''ε''0 appears in Maxwell's equations, which describe the properties of electr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
