Ebers–Moll Model
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small Electric current, current injected at one of its Terminal (electronics), terminals to control a much larger current flowing between the terminals, making the device capable of Amplifier, amplification or Electronic switch, switching. BJTs use two P–n junction, p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the Doping (semiconductors), doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of j ...
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TO-3
In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits. ''TO'' stands for "Transistor Outline" and relates to a series of technical drawings produced by JEDEC. The TO-3 case has a flat surface which can be attached to a heatsink, normally via a thermally conductive but electrically insulating washer. The design originated at Motorola around 1955 from a group headed by Dr. Virgil E. Bottom. who was director of research of the Motorola Semiconductor Division. The first use of this design was for the germanium alloy-junction power transistor 2N176 – the first power transistor to be put into quantity production. The lead spacing was originally intended to allow plugging the device into a then-common tube socket. Typical applications The metal package can be attached to a heat sink, making it suitable for devices dissipating several watts o ...
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