AlInGaP
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AlInGaP
Aluminium gallium indium phosphide (, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of Multi-junction solar cell, multi-junction photovoltaics and optoelectronic devices. It has a direct and indirect band gaps, direct bandgap ranging from ultraviolet to infrared photon energies. AlGaInP is used in heterostructures for high-brightness red, orange, green, and yellow light-emitting diodes. It is also used to make diode lasers. Preparation AlGaInP is typically grown by heteroepitaxy on gallium arsenide or gallium phosphide substrates in order to form a quantum well structure that can be fabricated into different devices. Properties The direct bandgap of AlGaInP encompasses the energy range of visible light (1.7 eV - 3.1 eV). By selecting a specific composition of AlGaInP, the bandgap can be selected to correspond to the energy of a specific wavelength of visible light. For instance, this can be used to obtain LEDs th ...
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III-V Semiconductors
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows op ...
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