Gallium(III) Phosphide
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Gallium phosphide (GaP), a
phosphide In chemistry, a phosphide is a compound containing the ion or its equivalent. Many different phosphides are known, with widely differing structures. Most commonly encountered on the binary phosphides, i.e. those materials consisting only of pho ...
of
gallium Gallium is a chemical element; it has Chemical symbol, symbol Ga and atomic number 31. Discovered by the French chemist Paul-Émile Lecoq de Boisbaudran in 1875, elemental gallium is a soft, silvery metal at standard temperature and pressure. ...
, is a compound
semiconductor material A semiconductor is a material with electrical conductivity between that of a Electrical conductor, conductor and an Insulator (electricity), insulator. Its conductivity can be modified by adding impurities ("doping (semiconductor), doping") to ...
with an indirect
band gap In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to t ...
of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water. GaP has a microhardness of 9450 N/mm2, a
Debye temperature In thermodynamics and solid-state physics, the Debye model is a method developed by Peter Debye in 1912 to estimate phonon contribution to the specific heat (heat capacity) in a solid. It treats the oscillation, vibrations of the Crystal struct ...
of , and a
thermal expansion Thermal expansion is the tendency of matter to increase in length, area, or volume, changing its size and density, in response to an increase in temperature (usually excluding phase transitions). Substances usually contract with decreasing temp ...
coefficient of 5.3 K−1 at room temperature.
Sulfur Sulfur ( American spelling and the preferred IUPAC name) or sulphur ( Commonwealth spelling) is a chemical element; it has symbol S and atomic number 16. It is abundant, multivalent and nonmetallic. Under normal conditions, sulfur atoms ...
,
silicon Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid (sometimes considered a non-metal) and semiconductor. It is a membe ...
or
tellurium Tellurium is a chemical element; it has symbol Te and atomic number 52. It is a brittle, mildly toxic, rare, silver-white metalloid. Tellurium is chemically related to selenium and sulfur, all three of which are chalcogens. It is occasionally fou ...
are used as
dopant A dopant (also called a doping agent) is a small amount of a substance added to a material to alter its physical properties, such as electrical or optics, optical properties. The amount of dopant is typically very low compared to the material b ...
s to produce
n-type semiconductor N-type, N type or Type N may refer to: * N-type semiconductor is a key material in the manufacture of transistors and integrated circuits * An N-type connector is a threaded RF connector used to join coaxial cables * The MG N-type Magnette was p ...
s.
Zinc Zinc is a chemical element; it has symbol Zn and atomic number 30. It is a slightly brittle metal at room temperature and has a shiny-greyish appearance when oxidation is removed. It is the first element in group 12 (IIB) of the periodic tabl ...
is used as a dopant for the
p-type semiconductor P-type or type P may refer to: P-type * P-type orbit, type of planetary orbit in a binary system * P-type asteroid, type of asteroid * P-type semiconductor * MG P-type, a type of automobile * P-type ATPase, evolutionarily related ion and lipid ...
. Gallium phosphide has applications in optical systems. Its static
dielectric constant The relative permittivity (in older texts, dielectric constant) is the permittivity of a material expressed as a ratio with the electric permittivity of a vacuum. A dielectric is an insulating material, and the dielectric constant of an insul ...
is 11.1 at room temperature. Its
refractive index In optics, the refractive index (or refraction index) of an optical medium is the ratio of the apparent speed of light in the air or vacuum to the speed in the medium. The refractive index determines how much the path of light is bent, or refrac ...
varies between ~3.2 and 5.0 across the visible range, which is higher than in most other semiconducting materials. In its transparent range, its index is higher than almost any other transparent material, including gemstones such as
diamond Diamond is a Allotropes of carbon, solid form of the element carbon with its atoms arranged in a crystal structure called diamond cubic. Diamond is tasteless, odourless, strong, brittle solid, colourless in pure form, a poor conductor of e ...
, or non-oxide lenses such as
zinc sulfide Zinc sulfide (or zinc sulphide) is an inorganic compound with the chemical formula of ZnS. This is the main form of zinc found in nature, where it mainly occurs as the mineral sphalerite. Although this mineral is usually black because of various i ...
.


Light-emitting diodes

Gallium phosphide has been used in the manufacture of low-cost red, orange, and green
light-emitting diode A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corre ...
s (LEDs) with low to medium brightness since the 1960s. It is used standalone or together with gallium arsenide phosphide. Pure GaP LEDs emit green light at a wavelength of 555 nm.
Nitrogen Nitrogen is a chemical element; it has Symbol (chemistry), symbol N and atomic number 7. Nitrogen is a Nonmetal (chemistry), nonmetal and the lightest member of pnictogen, group 15 of the periodic table, often called the Pnictogen, pnictogens. ...
-doped GaP emits yellow-green (565 nm) light,
zinc oxide Zinc oxide is an inorganic compound with the Chemical formula, formula . It is a white powder which is insoluble in water. ZnO is used as an additive in numerous materials and products including cosmetics, Zinc metabolism, food supplements, rubbe ...
doped GaP emits red (700 nm). Gallium phosphide is transparent for yellow and red light, therefore GaAsP-on-GaP LEDs are more efficient than GaAsP-on-
GaAs Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circui ...
.


Crystal growth

At temperatures above ~900 °C, gallium phosphide dissociates and the phosphorus escapes as a gas. In crystal growth from a 1500 °C melt (for LED wafers), this must be prevented by holding the phosphorus in with a blanket of molten
boric oxide Boron trioxide or diboron trioxide is the oxide of boron with the formula . It is a colorless transparent solid, almost always glassy (amorphous), which can be crystallized only with great difficulty. It is also called boric oxide or boria. It h ...
in inert gas pressure of 10–100 atmospheres. The process is called liquid encapsulated Czochralski (LEC) growth, an elaboration of the
Czochralski process The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals (monocrystals) of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, plati ...
used for silicon wafers.


References


Cited sources

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External links


GaP
refractiveindex.info

{{Phosphides III-V semiconductors Optical materials Gallium compounds Phosphides III-V compounds Light-emitting diode materials Zincblende crystal structure