Dopant activation is the process of obtaining the desired electronic contribution from impurity species in a

semiconductor A semiconductor is a material with electrical conductivity between that of a conductor and an insulator. Its conductivity can be modified by adding impurities (" doping") to its crystal structure. When two regions with different doping level ...

host. The term is often restricted to the application of thermal energy following the ion implantation of dopants. In the most common industrial example, rapid thermal processing is applied to silicon following the ion implantation of dopants such as phosphorus, arsenic and boron. Vacancies generated at elevated temperature (1200 °C) facilitate the movement of these species from interstitial to substitutional lattice sites while amorphization damage from the implantation process recrystallizes. A relatively rapid process, peak temperature is often maintained for less than one second to minimize unwanted chemical

diffusion Diffusion is the net movement of anything (for example, atoms, ions, molecules, energy) generally from a region of higher concentration to a region of lower concentration. Diffusion is driven by a gradient in Gibbs free energy or chemical p ...

References

Semiconductor properties {{Electronics-stub