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Varicap
A varicap diode, varactor diode, variable capacitance diode, variable reactance diode or tuning diode is a type of diode designed to exploit the voltage-dependent capacitance of a reverse-biased p–n junction. Applications Varactors are used as voltage-controlled capacitors. They are commonly used in voltage-controlled oscillators, parametric amplifiers, and frequency multipliers. Voltage-controlled oscillators have many applications such as frequency modulation for FM transmitters and phase-locked loops. Phase-locked loops are used for the frequency synthesizers that tune many radios, television sets, and cellular telephones. The varicap was developed by the Pacific Semiconductor subsidiary of the Ramo Wooldridge Corporation who received a patent for the device in June 1961. The device name was also trademarked as the "Varicap" by TRW Semiconductors, the successor to Pacific Semiconductors, in October 1967. This helps explain the different names for the device as it ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Diode
A diode is a two-Terminal (electronics), terminal electronic component that conducts electric current primarily in One-way traffic, one direction (asymmetric electrical conductance, conductance). It has low (ideally zero) Electrical resistance and conductance, resistance in one direction and high (ideally infinite) resistance in the other. A semiconductor diode, the most commonly used type today, is a Crystallinity, crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. It has an Exponential function, exponential current–voltage characteristic. Semiconductor diodes were the first Semiconductor device, semiconductor electronic devices. The discovery of asymmetric electrical conduction across the contact between a Crystal, crystalline mineral and a metal was made by German physicist Ferdinand Braun in 1874. Today, most diodes are made of silicon, but other semiconducting materials such as gallium arsenide and germanium are also ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
TRW Inc
TRW Inc. was an American corporation involved in a variety of businesses, mainly aerospace, electronics, automotive, and credit reporting.http://www.fundinguniverse.com/company-histories/TRW-Inc-Company-History.html TRW Inc. It was a pioneer in multiple fields including electronic components, integrated circuits, computers, software and systems engineering. TRW built many spacecraft, including Pioneer 1, Pioneer 10, and several space-based observatories. It was #57 on the 1986 Fortune 500 list, and had 122,258 employees. The company was called Thompson Ramo Wooldridge Inc., after the 1958 merger of the Ramo-Wooldridge Corporation and Thompson Products. This was later shortened to TRW. The company was founded in 1901 and lasted for just over a century until being acquired by Northrop Grumman in 2002. It spawned a variety of corporations, including Pacific Semiconductors, The Aerospace Corporation, Bunker-Ramo and Experian. Its automotive businesses were sold off by Northro ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Schottky Diode
The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes. When sufficient forward voltage is applied, a current flows in the forward direction. A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency. Construction A metal–semiconductor junction is formed between a metal and a semiconductor, creating a Schottky barrier (instead of a semiconductor–semiconductor junction as in conventional diodes). Typical metals used ar ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Depletion Zone
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region, or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers dissipate, or been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region, leaving none to carry a current. Understanding the depletion region is key to explaining modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena. Formation in a p–n junction A depletion region forms instantaneously across a p–n junction. It is most easily described when the junction is in thermal equilibrium or in a steady state: ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Square Root
In mathematics, a square root of a number is a number such that y^2 = x; in other words, a number whose ''square'' (the result of multiplying the number by itself, or y \cdot y) is . For example, 4 and −4 are square roots of 16 because 4^2 = (-4)^2 = 16. Every nonnegative real number has a unique nonnegative square root, called the ''principal square root'' or simply ''the square root'' (with a definite article, see below), which is denoted by \sqrt, where the symbol "\sqrt" is called the '' radical sign'' or ''radix''. For example, to express the fact that the principal square root of 9 is 3, we write \sqrt = 3. The term (or number) whose square root is being considered is known as the ''radicand''. The radicand is the number or expression underneath the radical sign, in this case, 9. For non-negative , the principal square root can also be written in exponent notation, as x^. Every positive number has two square roots: \sqrt (which is positive) and -\sqrt (which i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Passivity (engineering)
Passivity is a property of engineering systems, most commonly encountered in analog electronics and control systems. Typically, analog designers use ''passivity'' to refer to incrementally passive components and systems, which are incapable of Gain (electronics), power gain. In contrast, control systems engineers will use ''passivity'' to refer to thermodynamically passive ones, which consume, but do not produce, energy. As such, without context or a qualifier, the term ''passive'' is ambiguous. An electronic circuit consisting entirely of passive components is called a passive circuit, and has the same properties as a passive component. If a device is ''not'' passive, then it is an active device. Thermodynamic passivity In control systems and circuit network theory, a passive component or circuit is one that consumes energy, but does not produce energy. Under this methodology, voltage source, voltage and current sources are considered active, while resistors, capacitors, ind ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", , ) is a type of MOSFET, metal–oxide–semiconductor field-effect transistor (MOSFET) semiconductor device fabrication, fabrication process that uses complementary and symmetrical pairs of p-type semiconductor, p-type and n-type semiconductor, n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including Nonvolatile BIOS memory, CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data conversion, data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. In 1948, Bardeen and Brattain patented an insulated-gate transistor (IGFET) with an inversion layer. Bardeen's concept forms the basis of CMOS technology today. The CMOS process was presented by Fairchild Semico ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
