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Nonrectifying Junction
An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I–V) curve as with Ohm's law. Low-resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds. By contrast, a junction or contact that does not demonstrate a linear I–V curve is called non-ohmic. Non-ohmic contacts come in a number of forms, such as p–n junction, Schottky barrier, rectifying heterojunction, or breakdown junction. Generally the term "ohmic contact" implicitly refers to an ohmic contact of a metal to a semiconductor, where achieving ohmic contact resistance is possible but requires careful technique. Metal–metal ohmic contacts are relatively simpler to make, by ensuring direct contact between the metals without intervening layers of insulating contamination, excessive roughness or oxid ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IEEE 315-1975 (1993) 8
An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may vary from country to country, or engineering discipline, based on traditional conventions. Standards for symbols The graphic symbols used for electrical components in circuit diagrams are covered by national and international standards, in particular: * IEC 60617 (also known as BS 3939). * There is also IEC 61131-3 – for ladder-logic symbols. * JIC JIC (Joint Industrial Council) symbols as approved and adopted by the NMTBA (National Machine Tool Builders Association). They have been extracted from the Appendix of the NMTBA Specification EGPl-1967. * ANSI Y32.2-1975 (also known aIEEE Std 315-1975or CSA Z99-1975). * IEEE Std 91/91a: graphic symbols for logic functions (used in digital ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Depletion Region
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region, or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers dissipate, or been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region, leaving none to carry a current. Understanding the depletion region is key to explaining modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena. Formation in a p–n junction A depletion region forms instantaneously across a p–n junction. It is most easily described when the junction is in thermal equilibrium or in a steady stat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million intrinsic atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-typ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Oxide
An oxide () is a chemical compound containing at least one oxygen atom and one other element in its chemical formula. "Oxide" itself is the dianion (anion bearing a net charge of −2) of oxygen, an O2− ion with oxygen in the oxidation state of −2. Most of the Earth's crust consists of oxides. Even materials considered pure elements often develop an oxide coating. For example, aluminium foil develops a thin skin of (called a passivation layer) that protects the foil from further oxidation.Greenwood, N. N.; & Earnshaw, A. (1997). Chemistry of the Elements (2nd Edn.), Oxford:Butterworth-Heinemann. . Stoichiometry Oxides are extraordinarily diverse in terms of stoichiometries (the measurable relationship between reactants and chemical equations of an equation or reaction) and in terms of the structures of each stoichiometry. Most elements form oxides of more than one stoichiometry. A well known example is carbon monoxide and carbon dioxide.Greenwood, N. N.; & Earnsh ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Materials Engineering
Materials science is an Interdisciplinarity, interdisciplinary field of researching and discovering materials. Materials engineering is an engineering field of finding uses for materials in other fields and industries. The intellectual origins of materials science stem from the Age of Enlightenment, when researchers began to use analytical thinking from chemistry, physics, and engineering to understand ancient, Empirical relationship, phenomenological observations in metallurgy and mineralogy. Materials science still incorporates elements of physics, chemistry, and engineering. As such, the field was long considered by academic institutions as a sub-field of these related fields. Beginning in the 1940s, materials science began to be more widely recognized as a specific and distinct field of science and engineering, and major technical universities around the world created dedicated schools for its study. Materials scientists emphasize understanding how the history of a materi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Surface Reconstruction
Surface reconstruction refers to the process by which atoms at the surface of a crystal assume a different structure than that of the bulk. Surface reconstructions are important in that they help in the understanding of surface chemistry for various materials, especially in the case where another material is Adsorption, adsorbed onto the surface. Basic principles In an ideal infinite crystal, the equilibrium position of each individual atom is determined by the forces exerted by all the other atoms in the crystal, resulting in a periodic structure. If a surface is introduced to the surroundings by terminating the crystal along a given plane, then these forces are altered, changing the equilibrium positions of the remaining atoms. This is most noticeable for the atoms at or near the surface plane, as they now only experience inter-atomic forces from one direction. This imbalance results in the atoms near the surface assuming positions with different spacing and/or symmetry from the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. History Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. The semiconductor properties of GaAs and other Compound semiconductor, III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 and described in a 1952 publication. Commercial production of its monocrystals commenced in 1954, and more studies followed in the 195 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid (sometimes considered a non-metal) and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Silicon is a significant element that is essential for several physiological and metabolic processes in plants. Silicon is widely regarded as the predominant semiconductor material due to its versatile applications in various electrical devices such as transistors, solar cells, integrated circuits, and others. These may be due to its significant band gap, expansive optical transmission range, extensive absorption spectrum, surface roughening, and effective anti-reflection coating. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to p ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fermi Level Pinning
Enrico Fermi (; 29 September 1901 – 28 November 1954) was an Italian and naturalized American physicist, renowned for being the creator of the world's first artificial nuclear reactor, the Chicago Pile-1, and a member of the Manhattan Project. He has been called the "architect of the nuclear age" and the "architect of the atomic bomb". He was one of very few physicists to excel in both theoretical and experimental physics. Fermi was awarded the 1938 Nobel Prize in Physics for his work on induced radioactivity by neutron bombardment and for the discovery of transuranium elements. With his colleagues, Fermi filed several patents related to the use of nuclear power, all of which were taken over by the US government. He made significant contributions to the development of statistical mechanics, quantum theory, and nuclear and particle physics. Fermi's first major contribution involved the field of statistical mechanics. After Wolfgang Pauli formulated his exclusion principle i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Band Gap
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron (and the electron hole in the valence band) are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Affinity
The electron affinity (''E''ea) of an atom or molecule is defined as the amount of energy released when an electron attaches to a neutral atom or molecule in the gaseous state to form an anion. ::X(g) + e− → X−(g) + energy This differs by sign from the energy change of electron capture ionization. The electron affinity is positive when energy is released on electron capture. In solid state physics, the electron affinity for a surface is defined somewhat differently ( see below). Measurement and use of electron affinity This property is used to measure atoms and molecules in the gaseous state only, since in a solid or liquid state their energy levels would be changed by contact with other atoms or molecules. A list of the electron affinities was used by Robert S. Mulliken to develop an electronegativity scale for atoms, equal to the average of the electrons affinity and ionization potential. Other theoretical concepts that use electron affinity include electronic chem ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
