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Hafnium Oxide
Hafnium(IV) oxide is the inorganic compound with the formula . Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium(IV) oxide is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of graphite or carbon tetrachloride to give hafnium tetrachloride. Structure Hafnia typically adopts the same structure as zirconia (ZrO2). Unlike TiO2, which features six-coordinate Ti in all phases, zirconia and hafnia consist of seven-coordinate metal centres. A variety of other crystalline phases have been experimentally observed, including cubic fluorite (Fmm), tetragonal (P42/nmc), monoclinic (P21/c) a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Titanium(IV) Oxide
Titanium dioxide, also known as titanium(IV) oxide or titania , is the inorganic compound derived from titanium with the chemical formula . When used as a pigment, it is called titanium white, Pigment White 6 (PW6), or CI 77891. It is a white solid that is insoluble in water, although mineral forms can appear black. As a pigment, it has a wide range of applications, including paint, sunscreen, and food coloring. When used as a food coloring, it has E number E171. World production in 2014 exceeded 9 million tonnes. It has been estimated that titanium dioxide is used in two-thirds of all pigments, and pigments based on the oxide have been valued at a price of $13.2 billion. Structure In all three of its main dioxides, titanium exhibits octahedral geometry, being bonded to six oxide anions. The oxides in turn are bonded to three Ti centers. The overall crystal structures of rutile and anatase are tetragonal in symmetry whereas brookite is orthorhombic. The oxygen substructur ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Titanium Dioxide
Titanium dioxide, also known as titanium(IV) oxide or titania , is the inorganic compound derived from titanium with the chemical formula . When used as a pigment, it is called titanium white, Pigment White 6 (PW6), or Colour Index International, CI 77891. It is a white solid that is insoluble in water, although mineral forms can appear black. As a pigment, it has a wide range of applications, including paint, sunscreen, and food coloring. When used as a food coloring, it has E number E171. World production in 2014 exceeded 9 million tonnes. It has been estimated that titanium dioxide is used in two-thirds of all pigments, and pigments based on the oxide have been valued at a price of $13.2 billion. Structure In all three of its main dioxides, titanium exhibits Octahedral molecular geometry, octahedral geometry, being bonded to six oxide anions. The oxides in turn are bonded to three Ti centers. The overall crystal structures of rutile and anatase are tetragonal in symmetry ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Intel
Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California, and Delaware General Corporation Law, incorporated in Delaware. Intel designs, manufactures, and sells computer components such as central processing units (CPUs) and related products for business and consumer markets. It is one of the world's List of largest semiconductor chip manufacturers, largest semiconductor chip manufacturers by revenue, and ranked in the Fortune 500, ''Fortune'' 500 list of the List of largest companies in the United States by revenue, largest United States corporations by revenue for nearly a decade, from 2007 to 2016 Fiscal year, fiscal years, until it was removed from the ranking in 2018. In 2020, it was reinstated and ranked 45th, being the List of Fortune 500 computer software and information companies, 7th-largest technology company in the ranking. It was one of the first companies listed on Nasdaq. Intel supplies List of I ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Journal Of Materials Science
The ''Journal of Materials Science'' is a weekly peer-reviewed scientific journal covering all aspects of materials science. It was established in 1966 by Robert W. Cahn and is published by Springer Science+Business Media. The journal incorporated ''Journal of Materials Science Letters'' in 2003 and ''Interface Science'' in 2004. The Editor-in-Chief is C. Barry Carter (University of Connecticut). In 2012, the journal announced an annual "Cahn Prize" for best paper published in the journal, in honor of its founding editor. In 2021, the journal announced a similar annual "Bonfield Prize" for best review paper published in the journal, in honor of a former Editor-in-Chief, William Bonfield. There are two more specialized sister journals, '' Journal of Materials Science: Materials in Medicine'' and '' Journal of Materials Science: Materials in Electronics''. Abstracting and indexing The journal is abstracted and indexed in: According to the ''Journal Citation Reports'', the journal ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metal–oxide–semiconductor
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions, e ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DRAM
Dram, DRAM, or drams may refer to: Technology and engineering * Dram (unit), a unit of mass and volume, and an informal name for a small amount of liquor, especially whisky or whiskey * Dynamic random-access memory, a type of electronic semiconductor memory * Dram, Welsh term for a minecart, a small railway cargo truck used in a mine railway Currency and geography * Dram, Armenian for "money" ** Armenian dram, a monetary unit ** Artsakh dram (formerly ''Nagorno-Karabakh dram''), a monetary unit * Dram, the Tibetan name for the town of Zhangmu on the Nepal-Tibet border * Historic English name for Drammen, Norway Music * DRAM (musician) (Shelley Marshaun Massenburg-Smith, born 1988), American rapper and actor * Database of Recorded American Music, an online resource * The Drams, an American band made up of members of Slobberbone See also * Dram shop, a bar, tavern or similar commercial establishment where alcoholic beverages are sold * Dirham The dirham, dirhem or drah ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
High-κ Dielectric
In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law. Sometimes these materials are called "high-k" (pronounced "high kay"), instead of "high-κ" (high kappa). Need for high-κ materials Silicon dioxide () has been used as a gate oxide material for decades. As metal–oxide–semiconductor field-effect transistors (MOSFETs) have decreased in size, the thickness of the silicon dioxide gate dielectric has steadily decreased to increase the gate capacitance (per unit area) and thereby drive current (per ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Optical Coating
An optical coating is one or more thin-film optics, thin layers of material deposited on an optical component such as a lens (optics), lens, prism (optics), prism or mirror, which alters the way in which the optic reflection (physics), reflects and transmittance, transmits light. These coatings have become a key technology in the field of optics. One type of optical coating is an anti-reflective coating, which reduces unwanted reflections from surfaces, and is commonly used on glasses, spectacle and camera lenses. Another type is the high-reflector coating, which can be used to produce mirrors that reflect greater than 99.99% of the light that falls on them. More complex optical coatings exhibit high reflection over some range of wavelengths, and anti-reflection over another range, allowing the production of dichroism, dichroic dichroic filter, thin-film filters. Types of coating The simplest optical coatings are thin layers of metals, such as aluminium, which are deposited on g ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hafnium Silicate
Hafnium silicate is the hafnium(IV) salt of silicic acid with the chemical formula of HfSiO4. Thin films of hafnium silicate and zirconium silicate grown by atomic layer deposition, chemical vapor deposition or MOCVD, can be used as a high-k dielectric as a replacement for silicon dioxide in modern semiconductor devices. The addition of silicon to hafnium oxide increases the band gap, while decreasing the dielectric constant. Furthermore, it increases the crystallization temperature of amorphous films and further increases the material's thermal stability with Si at high temperatures. Nitrogen is sometimes added to hafnium silicate for improving the thermal stability and electrical properties of devices. Natural occurrence Hafnon is the natural form of hafnium orthosilicate. Its name suggests the mineral is the Hf analogue of much more common zircon Zircon () is a mineral belonging to the group of nesosilicates and is a source of the metal zirconium. Its chemical name is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor
A semiconductor is a material with electrical conductivity between that of a conductor and an insulator. Its conductivity can be modified by adding impurities (" doping") to its crystal structure. When two regions with different doping levels are present in the same crystal, they form a semiconductor junction. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called " metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits. Semiconductor devices can display a range of different useful properties, such as passing current more easil ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Atomic Layer Deposition
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called wiktionary:precursor, precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in semiconductor device fabrication, fabricating semiconductor devices, and part of the set of tools for synthesizing nanomaterials. Introduction During atomic layer deposition, a film is grown on a substrate by exposing its surface to alternate gaseous species (typically referred to as Precursor (chemistry), precursors or reactants). In contrast to chemical vapor deposition, the precursors are never present simultaneously in the reactor, but they are inserted as a series of sequential, no ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Applied Physics Letters
''Applied Physics Letters'' is a weekly peer-reviewed scientific journal that is published by the American Institute of Physics. Its focus is rapid publication and dissemination of new experimental and theoretical papers regarding applications of physics in all disciplines of science, engineering, and modern technology. Additionally, there is an emphasis on fundamental and new developments which lay the groundwork for fields that are rapidly evolving.Home page Applied Physics Letters. American Institute of Physics. 2016.Overview Applied Physics Letters. American Institute of Physics. 2016. The journal was established in 1962. The |
