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Gallium(III) Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. History Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. The semiconductor properties of GaAs and other III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 and described in a 1952 publication. Commercial production of its monocrystals commenced in 1954, and more studies followed in the 1950s. First infrared LEDs were made in 1962. Prep ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hydrochloric Acid
Hydrochloric acid, also known as muriatic acid or spirits of salt, is an aqueous solution of hydrogen chloride (HCl). It is a colorless solution with a distinctive pungency, pungent smell. It is classified as a acid strength, strong acid. It is a component of the gastric acid in the digestive systems of most animal species, including humans. Hydrochloric acid is an important laboratory reagent and industrial chemical. Etymology Because it was produced from halite, rock salt according to the methods of Johann Rudolph Glauber, hydrochloric acid was historically called by European alchemists ''spirits of salt'' or ''acidum salis'' (salt acid). Both names are still used, especially in other languages, such as , , , , , , , , , , (''ensan''), zh, 盐酸 (''yánsuān''), and (''yeomsan''). Gaseous HCl was called ''marine acid air''. The name ''muriatic acid'' has the same origin (''muriatic'' means "pertaining to brine or salt", hence ''muriate'' means hydrochloride), and this ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Light-emitting Diode
A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device. Appearing as practical electronic components in 1962, the earliest LEDs emitted low-intensity infrared (IR) light. Infrared LEDs are used in remote-control circuits, such as those used with a wide variety of consumer electronics. The first visible-light LEDs were of low intensity and limited to red. Early LEDs were often used as indicator lamps, replacing small incandescent bulbs, and in seven-segment displays. Later developments produced LEDs available in visible, ultraviolet (U ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Czochralski Process
The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals (monocrystals) of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The method is named after Polish scientist Jan Czochralski, who invented the method in 1915 while investigating the crystallization rates of metals. He made this discovery by accident: instead of dipping his pen into his inkwell, he dipped it in molten tin, and drew a tin filament, which later proved to be a single crystal. The process remains economically important, as roughly 90% of all modern-day semiconductor devices use material derived from this method. The most important application may be the growth of large cylindrical ingots, or boules, of single crystal silicon used in the electronics industry to make semiconductor devices like integrated circuits. Other semiconductors, such ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Single Crystal
In materials science, a single crystal (or single-crystal solid or monocrystalline solid) is a material in which the crystal lattice of the entire sample is continuous and unbroken to the edges of the sample, with no Grain boundary, grain boundaries. The absence of the crystallographic defect, defects associated with grain boundaries can give monocrystals unique properties, particularly mechanical, optical and electrical, which can also be anisotropic, depending on the type of crystallography, crystallographic structure. These properties, in addition to making some gems precious, are industrially used in technological applications, especially in optics and electronics. Because entropy, entropic effects favor the presence of some imperfections in the microstructure of solids, such as impurity, impurities, inhomogeneous strain and crystallographic defects such as dislocations, perfect single crystals of meaningful size are exceedingly rare in nature. The necessary laboratory condi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Oxidation State
In chemistry, the oxidation state, or oxidation number, is the hypothetical Electrical charge, charge of an atom if all of its Chemical bond, bonds to other atoms are fully Ionic bond, ionic. It describes the degree of oxidation (loss of electrons) of an atom in a chemical compound. Conceptually, the oxidation state may be positive, negative or zero. Beside nearly-pure ionic bonding, many covalent bonds exhibit a strong ionicity, making oxidation state a useful predictor of charge. The oxidation state of an atom does not represent the "real" charge on that atom, or any other actual atomic property. This is particularly true of high oxidation states, where the ionization energy required to produce a multiply positive ion is far greater than the energies available in chemical reactions. Additionally, the oxidation states of atoms in a given compound may vary depending on Electronegativities of the elements (data page), the choice of electronegativity scale used in their calculation. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Siemens-Schuckert
Siemens-Schuckert (or Siemens-Schuckertwerke) was a German electrical engineering company headquartered in Berlin, Erlangen and Nuremberg that was incorporated into the Siemens AG in 1966. Siemens Schuckert was founded in 1903 when Siemens & Halske acquired Schuckertwerke. Subsequently, Siemens & Halske specialized in communications engineering and Siemens-Schuckert in power engineering and pneumatic instrumentation. During World War I Siemens-Schuckert also produced aircraft. It took over manufacturing of the Protos vehicles in 1908. In World War II, the company had a factory producing aircraft and other parts at Monowitz near Auschwitz. There was a workers camp near the factory known as Bobrek concentration camp. The Siemens Schuckert logo consisted of an S with a smaller S superimposed on the middle with the smaller S rotated left by 45 degrees.Siemens used this as a theme for their logos with absorbed companies: Siemens & Halske's logo was a large S with a small superimp ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heinrich Welker
Heinrich Johann Welker (9 September 1912 in Ingolstadt – 25 December 1981 in Erlangen) was a German theoretical and applied physicist who invented the " transistron", a transistor made at Westinghouse independently of the first successful transistor made at Bell Laboratories. He did fundamental work in III-V compound semiconductors, and paved the way for microwave semiconductor elements and laser diodes. Biography and important work Starting in 1931, Welker studied at the University of Munich under Arnold Sommerfeld, and was granted a Ph.D. in 1936. The book '' Electrodynamics - Lectures on Theoretical Physics Volume III'' by Sommerfeld was based on lecture notes prepared by Welker during the winter semester of 1933/1934. Welker was granted his Habilitation under Sommerfeld in 1939.Mehra, Volume 6, Part 2, 2001, p. 868. During the war years, 1940 to 1945, Welker worked at Luftfunkforschungs Institut in Oberpfaffenhofen, but still maintained association (1942 to 1944) ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Compound Semiconductor
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium(III) Oxide
Gallium(III) oxide is an inorganic compound and Wide-bandgap semiconductor, ultra-wide-bandgap semiconductor with the formula Gallium, Ga2trioxide, O3. It is actively studied for applications in power electronics, phosphors, and Gas detector, gas sensing. The compound has several polymorphism (materials science), polymorphs, of which the Monoclinic crystal system, monoclinic β-phase is the most stable. The β-phase’s bandgap of 4.7–4.9 eV and large-area, native substrates make it a promising competitor to Gallium nitride, GaN and Silicon carbide, SiC-based power electronics applications and Solar-blind technology, solar-blind UV Photodetector, photodetectors. The orthorhombic ĸ-Gallium, Ga2trioxide, O3 is the second most stable polymorph. The ĸ-phase has shown instability of subsurface doping density under thermal exposure. Ga2O3 exhibits reduced thermal conductivity and electron mobility by an order of magnitude compared to Gallium nitride, GaN and Silicon carbide, SiC, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Victor Goldschmidt
Victor Moritz Goldschmidt (27 January 1888 – 20 March 1947) was a Norwegian mineralogist considered (together with Vladimir Vernadsky) to be the founder of modern geochemistry and crystal chemistry, developer of the Goldschmidt Classification of elements. Early life and education Goldschmidt was born in Zürich, Switzerland on 27 January 1888. His father, Heinrich Jacob Goldschmidt, (1857–1937) was a physical chemist at the ETH Zurich, Eidgenössisches Polytechnikum and his mother, Amelie Koehne (1864–1929), was the daughter of a lumber merchant. They named him Viktor after a colleague of Heinrich, Victor Meyer. His father's family was Jewish back to at least 1600 and mostly highly educated, with rabbis, judges, lawyers and military officers among their numbers. As his father's career progressed, the family moved first to Amsterdam in 1893, to Heidelberg in 1896, and finally to Kristiania (later Oslo), Norway in 1901, where he took over the physical chemistry chai ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminum Gallium Arsenide
Aluminium gallium arsenide (also gallium aluminium arsenide) ( Alx Ga1−x As) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The ''x'' in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs. The chemical formula ''AlGaAs'' should be considered an abbreviated form of the above, rather than any particular ratio. The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct. The is related with the bandgap via the Kramers–Kronig relations and varies between 2.9 (x = 1) and 3.5 (x = 0). ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
