Ferroelectric Tunnel Junction
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Ferroelectric Tunnel Junction
A Ferroelectric tunnel junction (FTJ) is a form of tunnel junction including a ferroelectric dielectric material sandwiched between two electrically conducting materials. Electrons do not directly pass through the junction, and instead they pass the barrier via quantum tunnelling. The structure is similar to a ferroelectric capacitor, but the ferroelectric layer is fabricated thin enough to enable significant tunneling current. The magnitude of the tunneling current is switched by the ferroelectric polarization and is governed by the tunneling electroresistance (TER). There exists two conditions that must be met in order to manufacture a reliable FTJ: the FE-layer must be at maximum 3 nm in order to allow the electron tunneling (see section tunneling), and the interfaces on both sides need to be energetically asymmetrical in order to obtain two separate potential barrier heights. Description Ferroelectric tunnel junctions are being developed as a memristive component for ...
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Tunnel Junction
In electronics, a tunnel junction is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles) pass through the barrier by the process of quantum tunnelling. Classically, the electron has zero probability of passing through the barrier. However, according to quantum mechanics, the electron has a non-zero wave amplitude in the barrier, and hence it has some probability of passing through the barrier. Tunnel junctions serve a variety of different purposes. Multijunction photovoltaic cell In multijunction photovoltaic cells, tunnel junctions form the connections between consecutive p-n junctions. They function as an ohmic contact, ohmic electrical contact in the middle of a semiconductor device. Magnetic tunnel junction In magnetic tunnel junctions, electrons tunnel through a thin insulating barrier from one magnetic material to another. This can serve as a basis for a magnetic detector. Superconduc ...
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Quantum Tunneling
In physics, a quantum (: quanta) is the minimum amount of any physical entity (physical property) involved in an interaction. The fundamental notion that a property can be "quantized" is referred to as "the hypothesis of quantization". This means that the magnitude of the physical property can take on only discrete values consisting of integer multiples of one quantum. For example, a photon is a single quantum of light of a specific frequency (or of any other form of electromagnetic radiation). Similarly, the energy of an electron bound within an atom is quantized and can exist only in certain discrete values. Atoms and matter in general are stable because electrons can exist only at discrete energy levels within an atom. Quantization is one of the foundations of the much broader physics of quantum mechanics. Quantization of energy and its influence on how energy and matter interact (quantum electrodynamics) is part of the fundamental framework for understanding and describing ...
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Superconducting Tunnel Junction
The superconducting tunnel junction (STJ) – also known as a superconductor–insulator–superconductor tunnel junction (SIS) – is an electronics, electronic device consisting of two superconductors separated by a very thin layer of Insulator (electrical), insulating material. Current passes through the junction via the process of quantum tunneling. The STJ is a type of Josephson junction, though not all the properties of the STJ are described by the Josephson effect. These devices have a wide range of applications, including high-sensitivity Cryogenic particle detectors, detectors of electromagnetic radiation, SQUID, magnetometers, RSFQ, high speed digital circuit elements, and superconducting quantum computing, quantum computing circuits. Quantum tunneling All Electrical current, currents flowing through the STJ pass through the insulating layer via the process of quantum tunneling. There are two components to the tunneling current. The first is from the tunneling of C ...
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Tunnel Diode
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively " negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony. In the first public report of the discovery (presentation at the 12th annual meeting of the Physical Society of Japan in October 1957), Takashi Suzuki, who was a student at Tokyo University of Science and doing his internship at Tokyo Tsushin Kogyo under Esaki's supervision, was a co-author. Suzuki, along with Yuriko Kurose, first observed the negative differential resistance when they were testing heavily doped P-N junctions. In 1973, Esaki received the Nobel Prize in Physics for experimental demonstration of the electron tunneling effect in semiconductors. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tun ...
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Multijunction Photovoltaic Cell
Multi-junction (MJ) solar cells are solar cells with multiple p–n junctions made of different semiconductor materials. Each material's p–n junction will produce electric current in response to different wavelengths of light. The use of multiple semiconducting materials allows the absorbance of a broader range of wavelengths, improving the cell's sunlight to electrical energy conversion efficiency. Traditional single-junction cells have a maximum theoretical efficiency of 33.16%. Theoretically, an infinite number of junctions would have a limiting efficiency of 86.8% under highly concentrated sunlight. As of 2024 the best lab examples of traditional crystalline silicon (c-Si) solar cells had efficiencies up to 27.1%, while lab examples of multi-junction cells have demonstrated performance over 46% under concentrated sunlight. Commercial examples of tandem cells are widely available at 30% under one-sun illumination, and improve to around 40% under concentrated sunlight. How ...
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Magnetic Tunnel Junction
Tunnel magnetoresistance (TMR) is a magnetoresistance, magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin Insulator (electrical), insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can Quantum tunneling, tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly Quantum mechanics, quantum mechanical phenomenon, and lies in the study of spintronics. Magnetic tunnel junctions are manufactured in thin film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed laser deposition and electron beam physical vapor deposition are also utilized. The junctions are prepared by photolithography. Phenomenological description The direction of the two magnetizations of the ferromagnetic film ...
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Spiking Neural Networks
Spiking neural networks (SNNs) are artificial neural networks (ANN) that mimic natural neural networks. These models leverage timing of discrete spikes as the main information carrier. In addition to neuronal and synaptic state, SNNs incorporate the concept of time into their operating model. The idea is that neurons in the SNN do not transmit information at each propagation cycle (as it happens with typical multi-layer perceptron networks), but rather transmit information only when a membrane potential—an intrinsic quality of the neuron related to its membrane electrical charge—reaches a specific value, called the threshold. When the membrane potential reaches the threshold, the neuron fires, and generates a signal that travels to other neurons which, in turn, increase or decrease their potentials in response to this signal. A neuron model that fires at the moment of threshold crossing is also called a spiking neuron model. While spike rates can be considered the analog ...
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Neuromorphic Computing
Neuromorphic computing is an approach to computing that is inspired by the structure and function of the human brain. A neuromorphic computer/chip is any device that uses physical artificial neurons to do computations. In recent times, the term ''neuromorphic'' has been used to describe analog, digital, mixed-mode analog/digital VLSI, and software systems that implement models of neural systems (for perception, motor control, or multisensory integration). Recent advances have even discovered ways to mimic the human nervous system through liquid solutions of chemical systems. An article published by AI researchers at Los Alamos National Laboratory states that, "neuromorphic computing, the next generation of AI, will be smaller, faster, and more efficient than the human brain." A key aspect of neuromorphic engineering is understanding how the morphology of individual neurons, circuits, applications, and overall architectures creates desirable computations, affects how informat ...
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Non-volatile Memory
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs ( metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD). Other examples of non-volatile memory include read-only memory (ROM), EPROM (erasable programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard disk drives, optical discs, floppy disks, and magnetic tape), and early computer storage methods such as punched tape and cards. Overview Non-volatile memory is typically used for the task of secondary storage or long-term per ...
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Artificial Intelligence
Artificial intelligence (AI) is the capability of computer, computational systems to perform tasks typically associated with human intelligence, such as learning, reasoning, problem-solving, perception, and decision-making. It is a field of research in computer science that develops and studies methods and software that enable machines to machine perception, perceive their environment and use machine learning, learning and intelligence to take actions that maximize their chances of achieving defined goals. High-profile applications of AI include advanced web search engines (e.g., Google Search); recommendation systems (used by YouTube, Amazon (company), Amazon, and Netflix); virtual assistants (e.g., Google Assistant, Siri, and Amazon Alexa, Alexa); autonomous vehicles (e.g., Waymo); Generative artificial intelligence, generative and Computational creativity, creative tools (e.g., ChatGPT and AI art); and Superintelligence, superhuman play and analysis in strategy games (e.g., ...
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Machine Learning
Machine learning (ML) is a field of study in artificial intelligence concerned with the development and study of Computational statistics, statistical algorithms that can learn from data and generalise to unseen data, and thus perform Task (computing), tasks without explicit Machine code, instructions. Within a subdiscipline in machine learning, advances in the field of deep learning have allowed Neural network (machine learning), neural networks, a class of statistical algorithms, to surpass many previous machine learning approaches in performance. ML finds application in many fields, including natural language processing, computer vision, speech recognition, email filtering, agriculture, and medicine. The application of ML to business problems is known as predictive analytics. Statistics and mathematical optimisation (mathematical programming) methods comprise the foundations of machine learning. Data mining is a related field of study, focusing on exploratory data analysi ...
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CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", , ) is a type of MOSFET, metal–oxide–semiconductor field-effect transistor (MOSFET) semiconductor device fabrication, fabrication process that uses complementary and symmetrical pairs of p-type semiconductor, p-type and n-type semiconductor, n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including Nonvolatile BIOS memory, CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data conversion, data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. In 1948, Bardeen and Brattain patented an insulated-gate transistor (IGFET) with an inversion layer. Bardeen's concept forms the basis of CMOS technology today. The CMOS process was presented by Fairchild Semico ...
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