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Random-access Memory
Random-access memory (RAM; ) is a form of Computer memory, electronic computer memory that can be read and changed in any order, typically used to store working Data (computing), data and machine code. A random-access memory device allows data items to be read (computer), read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks and Magnetic tape data storage, magnetic tape), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement. In today's technology, random-access memory takes the form of integrated circuit (IC) chips with MOSFET, MOS (metal–oxide–semiconductor) Memory cell (computing), memory cells. RAM is normally associated with Volatile memory, volatile types of memory where s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Static Random-access Memory
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The ''static'' qualifier differentiates SRAM from ''dynamic'' random-access memory (DRAM): * SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. * SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost. * Typically, SRAM is used for the cache and internal registers of a CPU while DRAM is used for a computer's main memory. History Semiconductor bipolar SRAM was invented in 1963 by Robert Norman at Fairchild Semiconductor. Metal–oxide–semiconductor SRAM (MOS-SRAM) was invented in 1964 by John Schmidt at Fairchild Semiconductor. The first device was a 64-bit MOS p-channel SRAM. SRAM was the main driver behind any new CMOS-based technology fab ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Samsung Electronics
Samsung Electronics Co., Ltd. (SEC; stylized as SΛMSUNG; ) is a South Korean multinational major appliance and consumer electronics corporation founded on 13 January 1969 and headquartered in Yeongtong District, Suwon, South Korea. It is currently the pinnacle of the Samsung ''chaebol'', accounting for 70% of the group's revenue in 2012, and has played a key role in the group's corporate governance due to cross ownership. It is majority-owned by foreign investors. Samsung Electronics is the world's List of largest technology companies by revenue, second-largest technology company by revenue, and its market capitalization stood at US$520.65 billion, the 12th largest in the world. It became the world's largest manufacturer of smartphones in 2024. Samsung is known most notably for its Samsung Galaxy brand consisting of phones such as its flagship Samsung Galaxy S series, Galaxy S series, popular midrange Samsung Galaxy A series, Galaxy A series as well as the premium Samsu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Synchronous Dynamic Random-access Memory
Synchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to the early 1990s used an ''asynchronous'' interface, in which input control signals have a direct effect on internal functions delayed only by the trip across its semiconductor pathways. SDRAM has a ''synchronous'' interface, whereby changes on control inputs are recognised after a rising edge of its clock input. In SDRAM families standardized by JEDEC, the clock signal controls the stepping of an internal finite-state machine that responds to incoming commands. These commands can be pipelined to improve performance, with previously started operations completing while new commands are received. The memory is divided into several equally sized but independent sections called ''banks'', allowing the device to operate on a memor ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Intel 1103
The 1103 is a dynamic random-access memory (DRAM) integrated circuit (IC) developed and fabricated by Intel. Introduced in October 1970, the 1103 was the first commercially available DRAM IC; and due to its small physical size and low price relative to magnetic-core memory, it replaced the latter in many applications. When it was introduced in 1970, initial production yields were poor, and it was not until the fifth stepping of the production masks that it became available in large quantities during 1971. Intel shipped the 250,000th 1103 RAM chip in June 1974. Development In 1969 William Regitz and his colleagues at Honeywell invented a three-transistor dynamic memory cell and began to canvass the semiconductor industry for a producer. The recently founded Intel Corporation responded and developed two very similar 1024-bit chips, the 1102 and 1103, under the lead of Joel Karp, working closely with William Regitz. [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Robert Dennard
Robert Heath Dennard (September 5, 1932 – April 23, 2024) was an American electrical engineer and inventor. Biography Dennard was born in Terrell, Texas. He received his B.S. and M.S. degrees in electrical engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively. He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958. His professional career was spent as a researcher for International Business Machines. Single Transistor DRAM At the time of the invention, Dennard and his colleagues were fixated on a bulky, costly memory system that used a series of six transistors to store just 1 bit of data. In 1966 he invented the one transistor memory cell consisting of a transistor and a capacitor for which a patent was issued in 1968. It became the basis for today's dynamic random-access memory (DRAM) and almost all other memory types such as SRAM and FLASH memory. DRAM was instrumental in changing the world of compu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Magnetic-core Memory
In computing, magnetic-core memory is a form of random-access memory. It predominated for roughly 20 years between 1955 and 1975, and is often just called core memory, or, informally, core. Core memory uses toroids (rings) of a hard magnetic material (usually a Ferrite (magnet)#Semi-hard ferrites, semi-hard ferrite). Each core stores one bit of information. Two or more wires pass through each core, forming an X-Y array of cores. When an electrical current above a certain threshold is applied to the wires, the core will become magnetized. The core to be assigned a value – or ''written'' – is selected by powering one X and one Y wire to half of the required current, such that only the single core at the intersection is written. Depending on the direction of the currents, the core will pick up a clockwise or counterclockwise magnetic field, storing a 1 or 0. This writing process also causes electricity to be electromagnetic induction, induced into nearby wires. If t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Bipolar Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small Electric current, current injected at one of its Terminal (electronics), terminals to control a much larger current between the remaining two terminals, making the device capable of Amplifier, amplification or Electronic switch, switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the Doping (semiconductor), doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of jun ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Electronic Calculator
An electronic calculator is typically a portable Electronics, electronic device used to perform calculations, ranging from basic arithmetic to complex mathematics. The first solid-state electronic calculator was created in the early 1960s. Pocket-sized devices became available in the 1970s, especially after the Intel 4004, the first microprocessor, was developed by Intel for the Japanese calculator company Busicom. Modern electronic calculators vary from cheap, give-away, ISO/IEC 7810, credit-card-sized models to sturdy desktop models with built-in printers. They became popular in the mid-1970s as the incorporation of integrated circuits reduced their size and cost. By the end of that decade, prices had dropped to the point where a basic calculator was affordable to most and they became common in schools. In addition to general-purpose calculators, there are those designed for specific markets. For example, there are scientific calculators, which include trigonometric and s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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Toshiba
is a Japanese multinational electronics company headquartered in Minato, Tokyo. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives, printers, batteries, lighting, as well as IT solutions such as quantum cryptography. It was formerly also one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. The Toshiba name is derived from its former name, Tokyo Shibaura Denki K.K. which in turn was a 1939 merger between Shibaura Seisaku-sho (founded in 1875) and Tokyo Denki (founded in 1890). The company name was officially changed to Toshiba Corporation in 1978. A technology company with a long history and sprawling businesses, Toshiba is a household name in Japan and has long been viewed as a symbol of the country's technological prowess post-World War II. As a semiconductor company and the i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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IBM System/360
The IBM System/360 (S/360) is a family of mainframe computer systems announced by IBM on April 7, 1964, and delivered between 1965 and 1978. System/360 was the first family of computers designed to cover both commercial and scientific applications and a complete range of applications from small to large. The design distinguished between architecture and implementation, allowing IBM to release a suite of compatible designs at different prices. All but the only partially compatible Model 44 and the most expensive systems use microcode to implement the instruction set, featuring 8-bit byte addressing and fixed-point binary, fixed-point decimal and hexadecimal floating-point calculations. The System/360 family introduced IBM's Solid Logic Technology (SLT), which packed more transistors onto a circuit card, allowing more powerful but smaller computers. System/360's chief architect was Gene Amdahl, and the project was managed by Fred Brooks, responsible to Chairman Thomas J. Wat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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NOR Flash Memory
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating-gate MOSFETs. They differ at the circuit level, depending on whether the state of the bit line or word lines is pulled high or low; in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate. Flash memory, a type of floating-gate memory, was invented by Fujio Masuoka at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memory allows a single machine word to be wri ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |