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Oxide Thin-film Transistor
An oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide compound. An oxide TFT is distinct from a metal oxide field effect transistor (MOSFET) where the word "oxide" refers to the insulating gate dielectric (normally silicon dioxide). In an oxide TFT, the word oxide refers to the semiconductor. Oxide TFTs have applications as amplifiers to deliver current to emitters in display backplanes. History The first transistor employing a metal oxide as the semiconductor was reported in 1964 by Klasens and Koelmans at Philips Research Laboratories. However, oxide TFTs were seldom considered again for several decades after this. It wasn't until the early 2000's that Hideo Hosono, who was studying transparent conducting oxides, discovered that oxysulfides and indium gallium zinc oxide could be used as semiconductors in TFTs. Soon after, John Wager at Oregon State University reported oxide TFTs e ...
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Metal Oxide TFT Cross Section
A metal (from Greek μέταλλον ''métallon'', "mine, quarry, metal") is a material that, when freshly prepared, polished, or fractured, shows a lustrous appearance, and conducts electricity and heat relatively well. Metals are typically ductile (can be drawn into wires) and malleable (they can be hammered into thin sheets). These properties are the result of the ''metallic bond'' between the atoms or molecules of the metal. A metal may be a chemical element such as iron; an alloy such as stainless steel; or a molecular compound such as polymeric sulfur nitride. In physics, a metal is generally regarded as any substance capable of conducting electricity at a temperature of absolute zero. Many elements and compounds that are not normally classified as metals become metallic under high pressures. For example, the nonmetal iodine gradually becomes a metal at a pressure of between 40 and 170 thousand times atmospheric pressure. Equally, some materials regarded as metals c ...
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N-type Metal-oxide-semiconductor
N-type metal-oxide-semiconductor logic uses n-type (-) MOSFETs (metal-oxide-semiconductor field-effect transistors) to implement logic gates and other digital circuits. These nMOS transistors operate by creating an inversion layer in a p-type transistor body. This inversion layer, called the n-channel, can conduct electrons between n-type "source" and "drain" terminals. The n-channel is created by applying voltage to the third terminal, called the gate. Like other MOSFETs, nMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity saturation. For many years, NMOS circuits were much faster than comparable PMOS and CMOS circuits, which had to use much slower p-channel transistors. It was also easier to manufacture NMOS than CMOS, as the latter has to implement p-channel transistors in special n-wells on the p-substrate. The major drawback with NMOS (and most other logic families) is that a DC current must ...
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Apple Inc
Apple Inc. is an American multinational technology company headquartered in Cupertino, California, United States. Apple is the largest technology company by revenue (totaling in 2021) and, as of June 2022, is the world's biggest company by market capitalization, the fourth-largest personal computer vendor by unit sales and second-largest mobile phone manufacturer. It is one of the Big Five American information technology companies, alongside Alphabet, Amazon, Meta, and Microsoft. Apple was founded as Apple Computer Company on April 1, 1976, by Steve Wozniak, Steve Jobs and Ronald Wayne to develop and sell Wozniak's Apple I personal computer. It was incorporated by Jobs and Wozniak as Apple Computer, Inc. in 1977 and the company's next computer, the Apple II, became a best seller and one of the first mass-produced microcomputers. Apple went public in 1980 to instant financial success. The company developed computers featuring innovative graphical user interface ...
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Sharp Corporation
is a Japanese multinational corporation that designs and manufactures electronic products, headquartered in Sakai-ku, Sakai, Osaka Prefecture. Since 2016 it has been majority owned by the Taiwan-based Foxconn Group. Sharp employs more than 50,000 people worldwide. The company was founded in September 1912 in Tokyo and takes its name from one of its founder's first Ever-Sharp mechanical pencil, which was invented by Tokuji Hayakawa in 1915. History Early years 1912–1945 In 1912, Tokuji Hayakawa founded a metal workshop in Tokyo. The first of his many inventions was a snap buckle named 'Tokubijo'. Another of his inventions was the Ever-Ready Sharp mechanical pencil in 1915. The product became one of the first internationally available mechanical pencils (while concurrent US design replaced it soon and became a modern type), and due to this big success the Sharp Corporation derived its name from it. After the pencil business was destroyed by the 1923 Great Kantō earthqu ...
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Amorphous Solid
In condensed matter physics and materials science, an amorphous solid (or non-crystalline solid, glassy solid) is a solid that lacks the long-range order that is characteristic of a crystal. Etymology The term comes from the Greek ''a'' ("without"), and ''morphé'' ("shape, form"). In some older articles and books, the term was used synonymously with glass. Today, "glassy solid" or "amorphous solid" is considered the overarching concept. Polymers are often amorphous. Structure Amorphous materials have an internal structure comprising interconnected structural blocks that can be similar to the basic structural units found in the corresponding crystalline phase of the same compound. Unlike crystalline materials, however, no long-range order exists. Localized order in amorphous materials can be categorized as short or medium range order. By convention, short range order extends only to the nearest neighbor shell, typically only 1-2 atomic spacings. Medium range order is the ...
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Sputtering
In physics, sputtering is a phenomenon in which microscopic particles of a solid material are ejected from its surface, after the material is itself bombarded by energetic particles of a plasma or gas. It occurs naturally in outer space, and can be an unwelcome source of wear in precision components. However, the fact that it can be made to act on extremely fine layers of material is utilised in science and industry—there, it is used to perform precise etching, carry out analytical techniques, and deposit thin film layers in the manufacture of optical coatings, semiconductor devices and nanotechnology products. It is a physical vapor deposition technique. Physics When energetic ions collide with atoms of a target material, an exchange of momentum takes place between them. These ions, known as "incident ions", set off collision cascades in the target. Such cascades can take many paths; some recoil back toward the surface of the target. If a collision cascade reache ...
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Central Processing Unit
A central processing unit (CPU), also called a central processor, main processor or just processor, is the electronic circuitry that executes instructions comprising a computer program. The CPU performs basic arithmetic, logic, controlling, and input/output (I/O) operations specified by the instructions in the program. This contrasts with external components such as main memory and I/O circuitry, and specialized processors such as graphics processing units (GPUs). The form, design, and implementation of CPUs have changed over time, but their fundamental operation remains almost unchanged. Principal components of a CPU include the arithmetic–logic unit (ALU) that performs arithmetic and logic operations, processor registers that supply operands to the ALU and store the results of ALU operations, and a control unit that orchestrates the fetching (from memory), decoding and execution (of instructions) by directing the coordinated operations of the ALU, registers and oth ...
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CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors ( CMOS sensors), data converters, RF circuits ( RF CMOS), and highly integrated transceivers for many types of communication. The CMOS process was originally conceived by Frank Wanlass at Fairchild Semiconductor and presented by Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. commercialized the technology with the trademar ...
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Electron Hole
In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is a quasiparticle which is the lack of an electron at a position where one could exist in an atom or atomic lattice. Since in a normal atom or crystal lattice the negative charge of the electrons is balanced by the positive charge of the atomic nuclei, the absence of an electron leaves a net positive charge at the hole's location. Holes in a metal or semiconductor crystal lattice can move through the lattice as electrons can, and act similarly to positively-charged particles. They play an important role in the operation of semiconductor devices such as transistors, diodes and integrated circuits. If an electron is excited into a higher state it leaves a hole in its old state. This meaning is used in Auger electron spectroscopy (and other x-ray techniques), in computational chemistry, and to explain the low electron-electron scattering-rate in crystals (metals, semiconductor ...
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P-type Metal-Oxide-Semiconductor
PMOS or pMOS logic (from p-channel metal–oxide–semiconductor) is a family of digital circuits based on p-channel, enhancement mode metal–oxide–semiconductor field-effect transistors (MOSFETs). In the late 1960s and early 1970s, PMOS logic was the dominant semiconductor technology for large-scale integrated circuits before being superseded by NMOS and CMOS devices. History and application Mohamed Atalla and Dawon Kahng manufactured the first working MOSFET at Bell Labs in 1959. They fabricated both PMOS and NMOS devices but only the PMOS devices were working. It would be more than a decade before contaminants in the manufacturing process (particularly sodium) could be managed well enough to manufacture practical NMOS devices. Compared to the bipolar junction transistor, the only other device available at the time for use in an integrated circuit, the MOSFET offers a number of advantages: *Given semiconductor device fabrication processes of similar precision, a MOSFE ...
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Electronvolt
In physics, an electronvolt (symbol eV, also written electron-volt and electron volt) is the measure of an amount of kinetic energy gained by a single electron accelerating from rest through an electric potential difference of one volt in vacuum. When used as a unit of energy, the numerical value of 1 eV in joules (symbol J) is equivalent to the numerical value of the charge of an electron in coulombs (symbol C). Under the 2019 redefinition of the SI base units, this sets 1 eV equal to the exact value Historically, the electronvolt was devised as a standard unit of measure through its usefulness in electrostatic particle accelerator sciences, because a particle with electric charge ''q'' gains an energy after passing through a voltage of ''V.'' Since ''q'' must be an integer multiple of the elementary charge ''e'' for any isolated particle, the gained energy in units of electronvolts conveniently equals that integer times the voltage. It is a common unit of ene ...
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Wide-bandgap Semiconductor
Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5  electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators. Wide-bandgap semiconductors permit devices to operate at much higher voltages, frequencies, and temperatures than conventional semiconductor materials like silicon and gallium arsenide. They are the key component used to make short-wavelength (green-UV) LEDs or lasers, and are also used in certain radio frequency applications, notably military radars. Their intrinsic qualities make them suitable for a wide range of other applications, and they are one of the leading contenders for ne ...
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