Negative Bias Temperature Instability
Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often approximated by a power-law dependence on time. It is of immediate concern in p-channel MOS devices (pMOS), since they almost always operate with negative gate-to-source voltage; however, the very same mechanism also affects nMOS transistors when biased in the accumulation region, i.e. with a negative bias applied to the gate. More specifically, over time positive charges become trapped at the oxide-semiconductor boundary underneath the gate of a MOSFET. These positive charges partially cancel the negative gate voltage ''without'' contributing to conduction through the channel as electron holes in the semiconductor are supposed to. When the gate voltage is removed, the trapped charges dissipate over a time scale of ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Boron
Boron is a chemical element; it has symbol B and atomic number 5. In its crystalline form it is a brittle, dark, lustrous metalloid; in its amorphous form it is a brown powder. As the lightest element of the boron group it has three valence electrons for forming covalent bonds, resulting in many compounds such as boric acid, the mineral sodium borate, and the ultra-hard crystals of boron carbide and boron nitride. Boron is synthesized entirely by cosmic ray spallation and supernovas and not by stellar nucleosynthesis, so it is a low-abundance element in the Solar System and in the Earth's crust. It constitutes about 0.001 percent by weight of Earth's crust. It is concentrated on Earth by the water-solubility of its more common naturally occurring compounds, the borate minerals. These are mined industrially as evaporites, such as borax and kernite. The largest known deposits are in Turkey, the largest producer of boron minerals. Elemental boron is found in smal ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Semiconductor Device Fabrication
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as microprocessors, microcontrollers, and memories (such as Random-access memory, RAM and flash memory). It is a multiple-step Photolithography, photolithographic and physico-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer (electronics), wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. This article focuses on the manufacture of integrated circuits, however steps such as etching and photolithography can be used to manufacture other devices such as LCD and OLED displays. The fabrication process is performed in highly specialized semiconductor fabrication plants, also called foundries or "fabs", with the cen ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Semiconductor Device Defects
A semiconductor is a material with electrical conductivity between that of a conductor and an insulator. Its conductivity can be modified by adding impurities (" doping") to its crystal structure. When two regions with different doping levels are present in the same crystal, they form a semiconductor junction. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits. Semiconductor devices can display a range of different useful properties, such as passing current more easily in one di ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Sufi Zafar
Sufi Zafar is a physicist and electrical engineer known for her research on CMOS-based biosensors. She completed her PhD in physics from Syracuse University in 1991, and works as a researcher for IBM Research at the Thomas J. Watson Research Center. Awards and recognition Zafar was elected as a Fellow of the American Physical Society (APS) in 2007, after a nomination from the APS Forum on Industrial & Applied Physics, "for her contribution to the understanding of electrical degradation and charge transport mechanisms in high permittivity and SiO2 dielectric thin films, with a focus on advanced CMOS and memory device applications". She was elected as an IEEE Fellow , the Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers (IEEE) is an American 501(c)(3) public charity professional organization for electrical engineering, electronics engineering, and ot ... in 2023, "for contributions to CMOS-compatible biosensors and high ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Electromigration
Electromigration is the transport of material caused by the gradual movement of the ions in a Conductor (material), conductor due to the momentum transfer between conducting electrons and diffusing metal atoms. The effect is important in applications where high direct current densities are used, such as in microelectronics and related structures. As the structure size in electronics such as integrated circuits (ICs) decreases, the practical significance of this effect increases. History The phenomenon of electromigration has been known for over 100 years, having been discovered by the French scientist Gerardin. The topic first became of practical interest during the late 1960s when packaged ICs first appeared. The earliest commercially available ICs failed in a mere three weeks of use from runaway electromigration, which led to a major industry effort to correct this problem. The first observation of electromigration in thin films was made by I. Blech.I. Blech: ''Electromigratio ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Hot Carrier Injection
Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state. The term "hot" refers to the effective temperature used to model carrier density, not to the overall temperature of the device. Since the charge carriers can become trapped in the gate dielectric of a MOS transistor, the switching characteristics of the transistor can be permanently changed. Hot-carrier injection is one of the mechanisms that adversely affects the reliability of semiconductors of solid-state devices. Physics The term “hot carrier injection” usually refers to the effect in MOSFETs, where a carrier is injected from the conducting channel in the silicon substrate to the gate dielectric, which usually is made of silicon dioxide (SiO2). To become “hot” and enter the conduction band of SiO2, an electron must gain a kinetic energy of ~3.2&nb ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Hafnium
Hafnium is a chemical element; it has symbol Hf and atomic number 72. A lustrous, silvery gray, tetravalent transition metal, hafnium chemically resembles zirconium and is found in many zirconium minerals. Its existence was predicted by Dmitri Mendeleev in 1869, though it was not identified until 1922, by Dirk Coster and George de Hevesy. Hafnium is named after , the Latin name for Copenhagen, where it was discovered. Hafnium is used in filaments and electrodes. Some semiconductor fabrication processes use its oxide for integrated circuits at 45 nanometers and smaller feature lengths. Some superalloys used for special applications contain hafnium in combination with niobium, titanium, or tungsten. Hafnium's large neutron capture cross section makes it a good material for neutron absorption in control rods in nuclear power plants, but at the same time requires that it be removed from the neutron-transparent corrosion-resistant zirconium alloys used in nuclear r ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Gate Oxide
The gate oxide is the dielectric layer that separates the metal gate, gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to form a thin (5 - 200 nm) insulating layer of silicon dioxide. The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the electrical conductance, conductance of the channel. Above the gate oxide is a thin electrode layer made of a electrical conductor, conductor which can be aluminium ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Transistor Aging
Transistor aging (sometimes called silicon aging) is the process of silicon transistors developing flaws over time as they are used, degrading performance and reliability, and eventually failing altogether. Despite the name, similar mechanisms may affect transistors made of any kind of semiconductor. Manufacturers compensate for this (as well as manufacturing defects) by running chips at slower speeds than they are initially capable of (underclocking). Causes The main causes of transistor aging in MOSFETs are ''electromigration'' and ''charge trapping''. Electromigration is the movement of ions caused by momentum from the transfer of electrons in the conductor. This results in degradation of the material, causing intermittent glitches that are very difficult to diagnose, and eventual failure. Charge trapping is related to time-dependent gate oxide breakdown, and manifests as an increase in resistance and threshold voltage (the voltage needed for the transistor to conduct), and ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Nitrogen
Nitrogen is a chemical element; it has Symbol (chemistry), symbol N and atomic number 7. Nitrogen is a Nonmetal (chemistry), nonmetal and the lightest member of pnictogen, group 15 of the periodic table, often called the Pnictogen, pnictogens. It is a common element in the universe, estimated at Abundance of the chemical elements, seventh in total abundance in the Milky Way and the Solar System. At standard temperature and pressure, two atoms of the element chemical bond, bond to form N2, a colourless and odourless diatomic molecule, diatomic gas. N2 forms about 78% of Atmosphere of Earth, Earth's atmosphere, making it the most abundant chemical species in air. Because of the volatility of nitrogen compounds, nitrogen is relatively rare in the solid parts of the Earth. It was first discovered and isolated by Scottish physician Daniel Rutherford in 1772 and independently by Carl Wilhelm Scheele and Henry Cavendish at about the same time. The name was suggested by French chemist ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |