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Nanoelectromechanical Systems
Nanoelectromechanical systems (NEMS) are a class of devices integrating electrical and mechanical functionality on the nanoscale. NEMS form the next logical miniaturization step from so-called microelectromechanical systems, or MEMS devices. NEMS typically integrate transistor-like nanoelectronics with mechanical actuators, pumps, or motors, and may thereby form physical, biological, and chemical sensors. The name derives from typical device dimensions in the nanometer range, leading to low mass, high mechanical resonance frequencies, potentially large quantum mechanical effects such as zero point motion, and a high surface-to-volume ratio useful for surface-based sensing mechanisms. Applications include accelerometers and sensors to detect chemical substances in the air. History Background As noted by Richard Feynman in his famous talk in 1959, " There's Plenty of Room at the Bottom," there are many potential applications of machines at smaller and smaller sizes; by buildi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gate Oxide
The gate oxide is the dielectric layer that separates the metal gate, gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to form a thin (5 - 200 nm) insulating layer of silicon dioxide. The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the electrical conductance, conductance of the channel. Above the gate oxide is a thin electrode layer made of a electrical conductor, conductor which can be aluminium ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
FinFET
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices exhibit significantly faster switching times and higher current density than planar CMOS (complementary metal–oxide–semiconductor) technology, resulting in enhanced performance and power efficienc FinFET is a type of non-planar transistor, or "3D" transistor. It is the basis for modern nanoelectronic semiconductor device fabrication. Microchips utilizing FinFET gates first became commercialized in the first half of the 2010s, and became the dominant gate design at 14 nm, 10 nm and 7 nm process nodes. It is common for a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
22 Nm Process
The "22 nm" node is the process step following 32 nm in CMOS MOSFET semiconductor device fabrication. It was first demonstrated by semiconductor companies for use in RAM in 2008. In 2010, Toshiba began shipping 24 nm flash memory chips, and Samsung Electronics began mass-producing 20 nm flash memory chips. The first consumer-level CPU deliveries using a 22 nm process started in April 2012 with the Intel Ivy Bridge processors. Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a "22nm" device is twenty-two nanometers. The ITRS 2006 Front End Process Update indicates that equivalent physical oxide thickness will not scale below 0.5 nm (about twice the diameter of a silicon atom), which is the expected value at the 22 nm node. This is an indication that CMOS scaling in this area has reached a wall at this p ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET Scaling
file:D2PAK.JPG, upright=1.3, Two power transistor, power MOSFETs in D2PAK surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120volts, V in the ''off'' state, and can conduct a continuous current of 30 amperes, A in the ''on'' state, dissipating up to about 100 watt, W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the thermal oxidation, controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Multigate Device
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate (transistor), gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the #GAAFET, GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies being developed by MOSFET, MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cell (computing), memory cells, colloquially referred to as extending Moore's law ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bijan Davari
Bijan Davari (Persian: ''بیژن داوری'') is an Iranian-American electrical engineer. He is an IBM Fellow and Vice President at IBM Thomas J Watson Research Center, Yorktown Hts, NY. His pioneering work in the miniaturization of semiconductor devices changed the world of computing. His research led to the first generation of voltage-scaled deep-submicron CMOS with sufficient performance to totally replace bipolar technology in IBM mainframes and enable new high-performance UNIX servers. As head of IBM’s Semiconductor Research Center (SRDC), he led IBM into the use of Copper interconnect, silicon on insulator (SOI), and Embedded DRAM before its rivals. He is a member of the U.S. National Academy of Engineering and is known for his seminal contributions to the field of CMOS technology. He is an IEEE Fellow, recipient of the J J Ebers Award in 2005 and IEEE Andrew S. Grove Award in 2010. At the present time, he leads the Next Generation Systems Area of research. Education ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CRC Press
The CRC Press, LLC is an American publishing group that specializes in producing technical books. Many of their books relate to engineering, science and mathematics. Their scope also includes books on business, forensics and information technology. CRC Press is now a division of Taylor & Francis, itself a subsidiary of Informa. History The CRC Press was founded as the Chemical Rubber Company (CRC) in 1903 by brothers Arthur, Leo and Emanuel Friedman in Cleveland, Ohio, based on an earlier enterprise by Arthur, who had begun selling rubber laboratory aprons in 1900. The company gradually expanded to include sales of laboratory equipment to chemist A chemist (from Greek ''chēm(ía)'' alchemy; replacing ''chymist'' from Medieval Latin ''alchemist'') is a graduated scientist trained in the study of chemistry, or an officially enrolled student in the field. Chemists study the composition of ...s. In 1913 the CRC offered a short (116-page) manual called the ''Rubber Handboo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
10 Nm Process
In semiconductor fabrication, the International Technology Roadmap for Semiconductors (ITRS) defines the "10 nanometer process" as the MOSFET technology node following the "14 nm" node. Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a "10nm" device is ten nanometers. For example, GlobalFoundries' " 7 nm" processes are dimensionally similar to Intel's "10 nm" process. TSMC and Samsung's "10 nm" processes are somewhere between Intel's "14 nm" and "10 nm" processes in transistor density. The transistor density (number of transistors per square millimetre) is more important than transistor size, since smaller transistors no longer necessarily mean improved performance, or an increase in the number of transistors. All production "10 nm" processes are based on FinFET (fin field-effect transistor) tec ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thin Films
A thin film is a layer of materials ranging from fractions of a nanometer ( monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications. A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface. The process of silvering was once commonly used to produce mirrors, while more recently the metal layer is deposited using techniques such as sputtering. Advances in thin film deposition techniques during the 20th century have enabled a wide range of technological breakthroughs in areas such as magnetic recording media, electronic semiconductor devices, integrated passive devices, light-emitting diodes, optical coatings (such as antireflective coatings), hard coatings on cutting tools, and for both energy generation (e.g. thin-film solar cells) and storage ( thin-film ba ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gold
Gold is a chemical element; it has chemical symbol Au (from Latin ) and atomic number 79. In its pure form, it is a brightness, bright, slightly orange-yellow, dense, soft, malleable, and ductile metal. Chemically, gold is a transition metal, a group 11 element, and one of the noble metals. It is one of the least reactivity (chemistry), reactive chemical elements, being the second-lowest in the reactivity series. It is solid under standard temperature and pressure, standard conditions. Gold often occurs in free elemental (native state (metallurgy), native state), as gold nugget, nuggets or grains, in rock (geology), rocks, vein (geology), veins, and alluvial deposits. It occurs in a solid solution series with the native element silver (as in electrum), naturally alloyed with other metals like copper and palladium, and mineral inclusions such as within pyrite. Less commonly, it occurs in minerals as gold compounds, often with tellurium (gold tellurides). Gold is resistant to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electric power, power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminal (electronics), terminals for connection to an electronic circuit. A voltage or Electric current, current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions. Physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transisto ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
