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Gallium(III) Oxide
Gallium(III) oxide is an inorganic compound and Wide-bandgap semiconductor, ultra-wide-bandgap semiconductor with the formula Gallium, Ga2trioxide, O3. It is actively studied for applications in power electronics, phosphors, and Gas detector, gas sensing. The compound has several polymorphism (materials science), polymorphs, of which the Monoclinic crystal system, monoclinic β-phase is the most stable. The β-phase’s bandgap of 4.7–4.9 eV and large-area, native substrates make it a promising competitor to Gallium nitride, GaN and Silicon carbide, SiC-based power electronics applications and Solar-blind technology, solar-blind UV Photodetector, photodetectors. The orthorhombic ĸ-Gallium, Ga2trioxide, O3 is the second most stable polymorph. The ĸ-phase has shown instability of subsurface doping density under thermal exposure. Ga2O3 exhibits reduced thermal conductivity and electron mobility by an order of magnitude compared to Gallium nitride, GaN and Silicon carbide, SiC, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Acid
An acid is a molecule or ion capable of either donating a proton (i.e. Hydron, hydrogen cation, H+), known as a Brønsted–Lowry acid–base theory, Brønsted–Lowry acid, or forming a covalent bond with an electron pair, known as a Lewis acid. The first category of acids are the proton donors, or Brønsted–Lowry acid–base theory, Brønsted–Lowry acids. In the special case of aqueous solutions, proton donors form the hydronium ion H3O+ and are known as Acid–base reaction#Arrhenius theory, Arrhenius acids. Johannes Nicolaus Brønsted, Brønsted and Martin Lowry, Lowry generalized the Arrhenius theory to include non-aqueous solvents. A Brønsted–Lowry or Arrhenius acid usually contains a hydrogen atom bonded to a chemical structure that is still energetically favorable after loss of H+. Aqueous Arrhenius acids have characteristic properties that provide a practical description of an acid. Acids form aqueous solutions with a sour taste, can turn blue litmus red, and ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Photodetector
Photodetectors, also called photosensors, are devices that detect light or other forms of electromagnetic radiation and convert it into an electrical signal. They are essential in a wide range of applications, from digital imaging and optical communication to scientific research and industrial automation. Photodetectors can be classified by their mechanism of detection, such as the photoelectric effect, photochemical reactions, or thermal effects, or by performance metrics like spectral response. Common types include photodiodes, phototransistors, and photomultiplier tubes, each suited to specific uses. Solar cells, which convert light into electricity, are also a type of photodetector. This article explores the principles behind photodetectors, their various types, applications, and recent advancements in the field. History The development of photodetectors began with the discovery of the photoelectric effect by Heinrich Hertz in 1887, later explained by Albert Einst ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Mobility
In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for Electron hole, holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field ''E'' is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, v_d. Then the electron mobility ''μ'' is defined as v_d = \mu E. Electron mobility is almost always specified in units of square centimetre, cm2/(volt, V⋅second, s). This is different from the SI unit of mobility, square metre, m2/(volt, V⋅second, s). They are related by 1 m2/(V⋅s) = 104 cm2/(V⋅s). Electrical resistivity and conductivity, Conductivity is proportiona ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Power Semiconductor Device
A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation mode" (i.e., it is either on or off), and therefore has a design optimized for such usage; it should usually not be used in linear operation. Linear power circuits are widespread as voltage regulators, audio amplifiers, and radio frequency amplifiers. Power semiconductors are found in systems delivering as little as a few tens of milliwatts for a headphone amplifier, up to around a gigawatt in a high voltage direct current transmission line. History The first electronic device used in power circuits was the electrolytic rectifier - an early version was described by a French experimenter, A. Nodon, in 1904. These were briefly popular with early radio experimenters as they ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metalorganic Vapour-phase Epitaxy
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as light-emitting diodes, its most widespread application. It was first demonstrated in 1967 at North American Aviation (later Rockwell International) Autonetics Division in Anaheim CA by Harold M. Manasevit. Basic pr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hydride Vapour Phase Epitaxy
Hydride vapour-phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides. Carrier gasses commonly used include ammonia, hydrogen Hydrogen is a chemical element; it has chemical symbol, symbol H and atomic number 1. It is the lightest and abundance of the chemical elements, most abundant chemical element in the universe, constituting about 75% of all baryon, normal matter ... and various chlorides. HVPE technology can significantly reduce the cost of production compared to the most common method of vapor deposition of organometallic compounds ( MOCVD). Cost reduction is achieved by significantly reducing the consumption of NH3, cheaper source materials than in MOCVD, reducing the capital equipment costs ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Molecular-beam Epitaxy
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors. MBE is used to make diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). History The original ideas of the MBE process were first established by K. G. Günther. Films that he deposited were not epitaxial, but were deposited on glass substrates. With the development of vacuum technology, the MBE process was demonstrated by John Davey and Titus Pankey who succeeded in growing GaAs epitaxial films on single crystal GaAs substrates using Günther's method. Major subsequent development of MBE films was enabled by John R. Arthur Jr., J.R. Arthur's investigations of kinetic behavior of growth mechanisms and Alfred Y. Cho's in situ observation of MBE process using reflection high-energy electron diffraction ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Sapphire
Sapphire is a precious gemstone, a variety of the mineral corundum, consisting of aluminium oxide () with trace amounts of elements such as iron, titanium, cobalt, lead, chromium, vanadium, magnesium, boron, and silicon. The name ''sapphire'' is derived from the Latin word ', itself from the Greek language, Greek word (), which referred to lapis lazuli. It is typically blue, but natural "fancy" sapphires also occur in yellow, purple, orange, and green colors; "parti sapphires" show two or more colors. Red corundum stones also occur, but are called ruby, rubies rather than sapphires. Pink-colored corundum may be classified either as ruby or sapphire depending on the locale. Commonly, natural sapphires are cut and polished into gemstones and worn in jewellery, jewelry. They also may be created synthetically in laboratories for industrial or decorative purposes in large boule (crystal), crystal boules. Because of the remarkable hardness of sapphires 9 on the Mohs scale of miner ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Atomic Layer Deposition
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called wiktionary:precursor, precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in semiconductor device fabrication, fabricating semiconductor devices, and part of the set of tools for synthesizing nanomaterials. Introduction During atomic layer deposition, a film is grown on a substrate by exposing its surface to alternate gaseous species (typically referred to as Precursor (chemistry), precursors or reactants). In contrast to chemical vapor deposition, the precursors are never present simultaneously in the reactor, but they are inserted as a series of sequential, no ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Epitaxial
Epitaxy (prefix ''epi-'' means "on top of”) is a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
