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Carrier Scattering
Defect types include atom vacancies, adatoms, steps, and kinks that occur most frequently at surfaces due to the finite material size causing crystal discontinuity. What all types of defects have in common, whether surface or bulk defects, is that they produce dangling bonds that have specific electron energy levels different from those of the bulk. This difference occurs because these states cannot be described with periodic Bloch waves due to the change in electron potential energy caused by the missing ion cores just outside the surface. Hence, these are localized states that require separate solutions to the Schrödinger equation so that electron energies can be properly described. The break in periodicity results in a decrease in conductivity due to defect scattering. Electronic energy levels of semiconductor dangling bonds A simpler and more qualitative way of determining dangling bond energy levels is with Harrison diagrams. Metals have non-directional bonding and a small ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Adatoms
An adatom is an atom that lies on a crystal surface, and can be thought of as the opposite of a surface vacancy (chemistry), vacancy. This term is used in surface chemistry and epitaxy, when describing single atoms lying on surfaces and surface roughness. The word is a portmanteau of "adsorption, adsorbed atom". A single atom, a cluster of atoms, or a molecule or molecular cluster, cluster of molecules may all be referred to by the general term "adparticle". This is often a thermodynamically unfavorable state. However, cases such as graphene may provide counter-examples. Growth ″Adatom″ is a portmanteau, portmanteau word, short for adsorption, adsorbed atom. When the atom arrives at a crystal surface, it is adsorbed by the periodic potential of the crystal, thus becoming an adatom. The minima of this potential form a network of adsorption sites on the surface. There are different types of adsorption sites. Each of these sites corresponds to a different structure of the su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Elastic Scattering
Elastic scattering is a form of particle scattering in scattering theory, nuclear physics and particle physics. In this process, the internal states of the Elementary particle, particles involved stay the same. In the non-relativistic case, where the relative velocities of the particles are much less than the speed of light, elastic scattering simply means that the total kinetic energy of the system is conserved. At relativistic velocities, elastic scattering also requires the final state to have the same number of particles as the initial state and for them to be of the same kind. Rutherford scattering When the incident particle, such as an alpha particle or electron, is diffraction, diffracted in the Coulomb potential of atoms and molecules, the elastic scattering process is called Rutherford scattering. In many electron diffraction techniques like reflection high energy electron diffraction (RHEED), transmission electron diffraction (TED), and gas electron diffraction (GED), wh ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Van Hove Singularity
In condensed matter physics, a Van Hove singularity is a singularity (non-smooth point) in the density of states (DOS) of a crystalline solid. The wavevectors at which Van Hove singularities occur are often referred to as critical points of the Brillouin zone. For three-dimensional crystals, they take the form of kinks (where the density of states is not differentiable). The most common application of the Van Hove singularity concept comes in the analysis of optical absorption spectra. The occurrence of such singularities was first analyzed by the Belgian physicist Léon Van Hove in 1953 for the case of phonon densities of states. Theory Consider a one-dimensional lattice of ''N'' particle sites, with each particle site separated by distance ''a'', for a total length of ''L'' = ''Na''. Instead of assuming that the waves in this one-dimensional box are standing waves, it is more convenient to adopt periodic boundary conditions: :k=\frac=n\frac where \lambda is wavelength, and ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Kronecker Delta
In mathematics, the Kronecker delta (named after Leopold Kronecker) is a function of two variables, usually just non-negative integers. The function is 1 if the variables are equal, and 0 otherwise: \delta_ = \begin 0 &\text i \neq j, \\ 1 &\text i=j. \end or with use of Iverson brackets: \delta_ = =j, For example, \delta_ = 0 because 1 \ne 2, whereas \delta_ = 1 because 3 = 3. The Kronecker delta appears naturally in many areas of mathematics, physics, engineering and computer science, as a means of compactly expressing its definition above. Generalized versions of the Kronecker delta have found applications in differential geometry and modern tensor calculus, particularly in formulations of gauge theory and topological field models. In linear algebra, the n\times n identity matrix \mathbf has entries equal to the Kronecker delta: I_ = \delta_ where i and j take the values 1,2,\cdots,n, and the inner product of vectors can be written as \mathbf\cdot\mathbf = \sum_^n ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bose–Einstein Distribution
Bose–Einstein may refer to: * Bose–Einstein condensate, a phase of matter in quantum mechanics ** Bose–Einstein condensation (network theory), the application of this model in network theory ** Bose–Einstein condensation of polaritons ** Bose–Einstein condensation of quasiparticles * Bose–Einstein correlations * Bose–Einstein integral * Bose–Einstein statistics, in particle statistics See also *Bose (other) *Einstein (other) *Boson (other) *Satyendra Nath Bose Satyendra Nath Bose (; 1 January 1894 – 4 February 1974) was an Indian theoretical physicist and mathematician. He is best known for his work on quantum mechanics in the early 1920s, in developing the foundation for Bose–Einstein statist ..., Indian physicist * Albert Einstein (other) {{disambiguation ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronic Band Structure
In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called ''band gaps'' or ''forbidden bands''). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules. Band theory has been successfully used to explain many physical properties of solids, such as electrical resistivity and optical absorption, and forms the foundation of the understanding of all solid-state devices (transistors, solar cells, etc.). Why bands and band gaps occur The formation of electronic bands and band gaps can be illustrated with two complementary models for electrons in solids. The first one is the nearly free electron model, in which the electrons are assumed to move almost freely within the material. In this model, the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Phonons
A phonon is a collective excitation in a periodic, Elasticity (physics), elastic arrangement of atoms or molecules in condensed matter physics, condensed matter, specifically in solids and some liquids. In the context of optically trapped objects, the quantized vibration mode can be defined as phonons as long as the modal wavelength of the oscillation is smaller than the size of the object. A type of quasiparticle in physics, a phonon is an excited state in the quantum mechanical Quantization (physics), quantization of the mode of vibration, modes of vibrations for elastic structures of interacting particles. Phonons can be thought of as quantized sound waves, similar to photons as quantized light waves. The study of phonons is an important part of condensed matter physics. They play a major role in many of the physical properties of condensed matter systems, such as thermal conductivity and electrical conductivity, as well as in models of neutron scattering and related effects. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ionization Energy
In physics and chemistry, ionization energy (IE) is the minimum energy required to remove the most loosely bound electron of an isolated gaseous atom, Ion, positive ion, or molecule. The first ionization energy is quantitatively expressed as :X(g) + energy ⟶ X+(g) + e− where X is any atom or molecule, X+ is the resultant ion when the original atom was stripped of a single electron, and e− is the removed electron. Ionization energy is positive for neutral atoms, meaning that the ionization is an endothermic process. Roughly speaking, the closer the outermost electrons are to the atomic nucleus, nucleus of the atom, the higher the atom's ionization energy. In physics, ionization energy (IE) is usually expressed in electronvolts (eV) or joules (J). In chemistry, it is expressed as the energy to ionize a Mole (unit), mole of atoms or molecules, usually as Joule per mole, kilojoules per mole (kJ/mol) or Kilocalorie per mole, kilocalories per mole (kcal/mol). Comparison of ion ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Affinity
The electron affinity (''E''ea) of an atom or molecule is defined as the amount of energy released when an electron attaches to a neutral atom or molecule in the gaseous state to form an anion. ::X(g) + e− → X−(g) + energy This differs by sign from the energy change of electron capture ionization. The electron affinity is positive when energy is released on electron capture. In solid state physics, the electron affinity for a surface is defined somewhat differently ( see below). Measurement and use of electron affinity This property is used to measure atoms and molecules in the gaseous state only, since in a solid or liquid state their energy levels would be changed by contact with other atoms or molecules. A list of the electron affinities was used by Robert S. Mulliken to develop an electronegativity scale for atoms, equal to the average of the electrons affinity and ionization potential. Other theoretical concepts that use electron affinity include electronic chem ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gate Capacitance
In electronics, gate capacitance is the capacitance of the gate terminal of a field-effect transistor (FET). It can be expressed as the absolute capacitance of the gate of a transistor, or as the capacitance per unit area of an integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology. In generations of approximately Dennard scaling of metal-oxide-semiconductor FETs (MOSFETs), the capacitance per unit area has increased inversely with device dimensions. Since the gate area has gone down by the square of device dimensions, the gate capacitance of a transistor has gone down in direct proportion with device dimensions. With Dennard scaling, the capacitance per unit of gate width has remained approximately constant; this measurement can include gate–source and gate–drain overlap capacitances. Other scalings are not uncommon; the voltages and gate oxide thicknesses have not always decreased as rapidly as device dimensions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
